Nexperia USA Inc. BAV70W/MIF

Overview

BAV70W from Nexperia is a high-speed switching double diode in SOT323 (SC-70) package, featuring common-cathode configuration, 100 V reverse voltage rating, ≤4 ns reverse recovery time, and ≤1.5 pF capacitance - deployed in signal routing and clamping circuits of RF front-ends and digital logic interfaces.

For engineers reviewing the BAV70W datasheet, BAV70W pinout, BAV70W application, or BAV70W equivalent, key selection criteria include trr ≤4 ns at IF = 10 mA, common-cathode dual-diode topology, low-leakage performance (IR ≤0.5 µA at VR = 80 V), and thermal resistance Rth(j-a) = 625 K/W on FR4 PCB.

Technical Context

The BAV70W integrates two independent silicon switching diodes sharing a common cathode terminal, enabling compact dual-path clamping or steering without inter-device mismatch. Its epitaxial planar construction supports fast carrier recombination, directly enabling trr ≤4 ns under standardized test conditions (IF = IR = 10 mA, RL = 100 Ω).

Designed for surface-mount operation on standard FR4 boards, it delivers stable VF ≤855 mV at IF = 10 mA and Cd ≤1.5 pF at VR = 0 V / f = 1 MHz - parameters critical for preserving signal integrity in 50 Ω RF paths and high-edge-rate digital lines.

Key Specifications

Pinout & Package

SOT323 (SC-70) plastic surface-mounted package: 3-terminal, single-row, gull-wing leads; 2.0 mm length × 1.25 mm width × 0.95 mm height; 1.3 mm lead pitch; FR4-compatible thermal profile per Fig. 8 and Fig. 9.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed dual-diode applications.

Compared with BAV99W and MMBD7000, the BAV70W uniquely balances ultra-fast recovery (≤4 ns), minimal capacitance (≤1.5 pF), and ultra-compact SOT323 packaging - making it optimal for space-constrained, high-frequency signal conditioning where both speed and layout density are critical.

Availability

BAV70W is available at Aetrix Electronics and suitable for RF front-end protection, high-speed logic interfacing, and precision analog input clamping requiring stable component supply across production lifecycles.

Supply support for BAV70W includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential efficiency technologies, delivering high-performance, reliable discrete and logic devices for automotive, industrial, and consumer markets.

The BAV70W belongs to Nexperia's high-speed switching diode product line, engineered specifically for signal integrity preservation in RF, digital, and mixed-signal systems where low trr, low Cd, and small footprint are mandatory.

FAQ

What is the maximum continuous forward current per diode for BAV70W?

The absolute maximum continuous forward current per diode is 175 mA at Tamb ≤ 25 °C, as specified in Table 5 (Limiting values). Derating applies above 25 °C ambient, with total power dissipation limited to 200 mW on FR4 PCB. This rating assumes single-diode conduction; simultaneous conduction of both diodes must remain within the 100 mA per-device limit stated for the dual-diode configuration.

Can BAV70W be used in AC-coupled RF amplifier stages?

Yes - its ≤1.5 pF capacitance at 0 V and ≤4 ns trr make it suitable for DC blocking and transient clamping in AC-coupled RF amplifiers up to 2 GHz. The common-cathode structure allows symmetric clamping of differential signals, and its low VF ensures minimal insertion loss (<0.1 dB typical) when biased near zero volts.

Is BAV70W automotive-qualified?

No - per Revision History (Section 14), this version was explicitly changed to non-automotive qualification in the July 2022 revision. Automotive-grade alternatives (e.g., BAV70W-Q) are available separately through Nexperia and require distinct part numbering and qualification documentation.

How does the common-cathode configuration affect PCB layout versus discrete diodes?

The common-cathode configuration eliminates the need for two separate cathode traces and their associated parasitic inductance. It reduces net count by one, simplifies routing in tight spaces, and improves matching between diode paths - especially beneficial in differential clamping where symmetry impacts common-mode rejection above 100 MHz.