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Nexperia USA Inc. BAV70W-QX
- Part No.:
- BAV70W-QX
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Diode Arrays
- Package:
- SC-70, SOT-323
- Datasheet:
-
BAV70W-QX.pdf
- Description:
- DIODE ARRAY GP 100V 175MA SOT323
- Quantity:
- Payment:
- Shipping:
Inventory:14,500
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Product details
Overview
BAV70W-Q from Nexperia is a high-speed switching double diode in SOT323 (SC-70) package, featuring common-cathode configuration, 100 V reverse voltage rating, ≤4 ns reverse recovery time, and ≤1.5 pF capacitance - deployed in automotive signal routing and ESD-protected I/O interface circuits.
For engineers reviewing the BAV70W-Q datasheet, BAV70W-Q pinout, BAV70W-Q application, or BAV70W-Q equivalent, this page delivers verified electrical parameters, AEC-Q101 qualification status, thermal resistance (625 K/W), forward voltage behavior across 1–150 mA, and real-world switching performance under pulsed conditions.
Technical Context
The BAV70W-Q integrates two independent silicon switching diodes sharing a common cathode terminal, enabling dual-channel clamping or steering in compact automotive signal paths. Its design targets low-capacitance, fast transient response, and stable leakage (<0.5 µA at 80 V, 25 °C) for CAN/LIN bus protection and logic-level translation.
Qualified to AEC-Q101, it supports junction temperatures up to 150 °C and operates reliably under repetitive peak forward current of 500 mA (1 µs pulse) and non-repetitive surges up to 4 A (1 µs). Thermal resistance from junction-to-ambient is 625 K/W on standard FR4 PCB.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Voltage (VR) | 100 V - supports 24 V automotive systems with ≥2× safety margin against load-dump transients |
| Reverse Recovery Time (trr) | ≤4 ns - enables clean switching at >100 MHz clock rates in RF detector and sample-hold circuits |
| Diode Capacitance (Cd) | ≤1.5 pF at 0 V - minimizes signal distortion in high-frequency analog front-ends and antenna switch paths |
| Forward Voltage (VF) | 855 mV at 10 mA - ensures low conduction loss in always-on bias networks and level-shifting chains |
| Reverse Current (IR) | ≤0.5 µA at 80 V, 25 °C - maintains signal integrity in high-impedance sensor interfaces and wake-up monitoring lines |
| Total Power Dissipation (Ptot) | 200 mW at Tamb ≤25 °C - allows operation without heatsinking in space-constrained ECUs and body control modules |
Pinout & Package
SOT323 (SC-70) plastic surface-mounted package: 3-terminal, 1.3 mm pitch, 2.0 mm × 1.25 mm × 0.95 mm body, optimized for automated reflow assembly and high-density PCB layouts.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (A1) | Anode of Diode 1 | Independent input path for first signal channel; used for bidirectional clamping or polarity-selective routing |
| 2 (A2) | Anode of Diode 2 | Second independent input; enables dual-rail protection or differential signal conditioning without cross-talk |
| 3 (CC) | Common Cathode | Shared output node tied to system ground or reference rail - simplifies layout and reduces parasitic inductance |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive underhood and cabin applications per stress test requirements including HTOL, TCT, and HAST |
| Ultra-low trr | ≤4 ns reverse recovery enables minimal switching loss in 10–100 MHz digital signal conditioning and RF envelope detection |
| Low Cd | ≤1.5 pF capacitance preserves bandwidth in high-speed data lines (e.g., LIN bus, sensor ADC inputs) without added filtering |
| Common-cathode topology | Reduces component count and board area vs. discrete dual-diode solutions; improves thermal coupling between diodes |
| Low IR at elevated Tj | ≤100 µA at VR = 80 V, Tj = 150 °C - ensures reliable standby operation in engine control units during hot-soak conditions |
Applications
| Automotive LIN Bus Protection | High-Speed Logic-Level Translation |
|---|---|
|
Use Scenario: Protecting LIN transceiver I/O pins against ESD and inductive kickback in body electronics modules. IC Role / Device Role / Timing Role: Dual-anode clamping diode with common cathode connected to VIO rail - provides bidirectional overvoltage limiting. Use Value: ≤4 ns trr prevents signal edge degradation at 19.2 kbaud; ≤1.5 pF Cd avoids timing skew in slew-rate-sensitive bus drivers. |
Use Scenario: Level-shifting between 3.3 V microcontroller GPIOs and 5 V peripheral logic in infotainment head units. IC Role / Device Role / Timing Role: Forward-biased steering diode pair enabling unidirectional voltage translation with minimal propagation delay. Use Value: 855 mV VF at 10 mA ensures <100 ns delay shift; AEC-Q101 qualification guarantees reliability across vehicle lifetime. |
| RF Signal Detector Circuit | Engine Control Unit Wake-Up Monitoring |
|
Use Scenario: Demodulating AM-modulated RF carrier signals in keyless entry receiver front-ends. IC Role / Device Role / Timing Role: High-speed envelope detector using fast-switching diode pair with matched characteristics. Use Value: ≤4 ns trr and ≤1.5 pF Cd preserve modulation fidelity up to 100 MHz; low leakage maintains DC accuracy in peak-hold stages. |
Use Scenario: Monitoring battery voltage and ignition status in low-power sleep mode of powertrain ECUs. IC Role / Device Role / Timing Role: Low-leakage voltage divider element and reverse-polarity protection diode in always-on sensing path. Use Value: ≤0.5 µA IR at 80 V ensures <1 µA total quiescent current contribution; 150 °C Tj rating supports under-hood deployment. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed dual-diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BAV99W-Q | Higher trr (≤6 ns), same VR (100 V), identical SOT323 package and AEC-Q101 qualification | Marginally slower switching limits use in >50 MHz RF detectors; otherwise drop-in for LIN and level-shift roles | Select when cost sensitivity outweighs sub-ns timing requirements and thermal derating is acceptable |
| MMBD7000-7-F | Non-automotive grade, VR = 100 V, trr = ≤4 ns, but not AEC-Q101 qualified; TO-236AB (SOT-23) package | Not suitable for automotive production; acceptable for industrial prototypes or consumer-grade designs | Choose only for non-automotive applications where qualification documentation is not required |
Compared with BAV99W-Q and MMBD7000-7-F, the BAV70W-Q uniquely combines AEC-Q101 compliance, ≤4 ns trr, and ≤1.5 pF capacitance in SOT323 - making it the only option qualified for production automotive signal integrity-critical functions requiring both speed and reliability.
Availability
BAV70W-Q is available at Aetrix Electronics and suitable for automotive LIN bus protection, high-speed logic-level translation, and RF signal detector circuits requiring stable component supply and full traceability.
Supply support for BAV70W-Q includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on essential efficiency technologies, delivering high-performance, high-reliability discrete and logic devices for automotive, industrial, and mobile markets.
The BAV70W-Q belongs to Nexperia's AEC-Q101-qualified high-speed switching diode product line, engineered specifically for automotive signal integrity, ESD robustness, and thermal resilience in harsh environments.
FAQ
Is BAV70W-Q pin-compatible with BAV99W-Q?
Yes - both use identical SOT323 (SC-70) package with matching pin 1 (A1), pin 2 (A2), and pin 3 (CC) assignments. Layouts designed for BAV99W-Q can be reused without modification, though BAV70W-Q offers tighter trr (≤4 ns vs. ≤6 ns) and lower Cd (≤1.5 pF).
What is the maximum continuous forward current per diode?
The absolute maximum continuous forward current per diode is 175 mA at Tamb ≤25 °C, as specified in Table 5 (Limiting values). Derating is required above 25 °C ambient; at 85 °C, the usable current drops to approximately 100 mA due to thermal constraints.
Does BAV70W-Q support wave soldering?
Yes - Nexperia provides dedicated wave soldering footprint (Fig. 9) with recommended solder land dimensions (3.65 mm × 2.1 mm), solder resist openings, and preferred transport direction. The device is rated for standard wave solder profiles per J-STD-020.
How does junction temperature affect reverse leakage?
Reverse leakage increases exponentially with junction temperature: at VR = 80 V, IR rises from ≤0.5 µA at 25 °C to ≤100 µA at 150 °C (Table 7). This behavior must be accounted for in always-on monitoring circuits operating near thermal limits.
BAV70W-QX Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- SC-70, SOT-323
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Diode Configuration:
- 1 Pair Common Cathode
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 100 V
- Current - Average Rectified (Io) (per Diode):
- 175mA (DC)
- Voltage - Forward (Vf) (Max) @ If:
- 1.25 V @ 150 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- 4 ns
- Current - Reverse Leakage @ Vr:
- 500 nA @ 80 V
- Operating Temperature - Junction:
- 150°C
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-323
BAV70W-QX FAQ
1.How can I place an order for BAV70W-QX through Aetrix?
Please submit a Request for Quotation (RFQ) for BAV70W-QX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAV70W-QX reliable?
The price and inventory of BAV70W-QX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAV70W-QX is usually 5 days.
3.What payment methods are accepted for BAV70W-QX?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAV70W-QX transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAV70W-QX?
BAV70W-QX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAV70W-QX order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAV70W-QX?
For technical support, including BAV70W-QX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAV70W-QX requirements.
6.How does Aetrix verify that BAV70W-QX is sourced from the original manufacturer or authorized distributors?
All BAV70W-QX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAV70W-QX meets industry standards.
7.What is the process for return or replacement of BAV70W-QX?
All BAV70W-QX units undergo pre-shipment inspection (PSI). If there is an issue with BAV70W-QX, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAV70W-QX part is unused and in its original packaging.
Return procedure for BAV70W-QX:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BAV70W-QX Tags
-
BAV99-7-F
Diodes Incorporated
-
BAT54C-7-F
Diodes Incorporated
-
BAV99,215
Nexperia USA Inc.
-
BAT54SLT1G
onsemi
-
BAV70LT1G
onsemi
-
BAT54CLT1G
onsemi
-
BAT54S-7-F
Diodes Incorporated
-
BAV99LT1G
onsemi
-
BAT54S,215
Nexperia USA Inc.
-
BAS40-04LT1G
onsemi
-
MMBD1503-TP
Micro Commercial Co
-
BAV99WT1G
onsemi
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