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Nexperia USA Inc. BAV70W/SN/8X
- Part No.:
- BAV70W/SN/8X
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Diode Arrays
- Package:
- SC-70, SOT-323
- Datasheet:
-
BAV70W/SN/8X.pdf
- Description:
- DIODE ARRAY GP 100V 175MA SOT323
- Quantity:
- Payment:
- Shipping:
Inventory:2,208
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Product details
Overview
BAV70W/SN/8X from Nexperia is a dual common-cathode high-speed switching diode in SOT323 (SC-70) package, rated for 100 V reverse voltage, 4 ns reverse recovery time, and 1.5 pF junction capacitance. It delivers 175 mA forward current at 25 °C ambient and supports automotive-grade signal routing in compact DC-DC feedback paths, ESD protection clamps, and high-frequency detector circuits.
For engineers reviewing the BAV70W/SN/8X datasheet, BAV70W/SN/8X pinout, BAV70W/SN/8X application, or BAV70W/SN/8X equivalent, this page provides verified electrical parameters, thermal resistance values (Rth(j-a) = 625 K/W), AEC-Q101 qualification status, and real-world use context for fast-switching discrete selection in space-constrained designs.
Technical Context
The BAV70W integrates two independent silicon switching diodes sharing a single cathode terminal, enabling compact dual-path rectification or steering without external interconnects. Its epitaxial construction ensures low trr (≤4 ns) and minimal charge storage under IF = 10 mA → IR = 10 mA transitions with RL = 100 Ω load.
Designed for reflow-only assembly on FR4 PCBs, it exhibits Rth(j-t) = 300 K/W to tie-point and operates reliably from −65 °C to +150 °C junction temperature. The 1.5 pF capacitance at 0 V VR and 1 MHz enables stable RF detector performance up to ~500 MHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse voltage (VR) | 100 V - supports input stage clamping in 48 V automotive systems and industrial 24 V rails. |
| Reverse recovery time (trr) | 4 ns - enables clean switching in PWM frequencies up to 100 MHz without tail current distortion. |
| Junction capacitance (Cd) | 1.5 pF - minimizes signal loading in RF envelope detectors and high-speed logic interface clamps. |
| Forward current (IF) | 175 mA - sufficient for bias current sourcing in op-amp level shifters and small-signal gate drivers. |
| Leakage current (IR) | 0.5 µA at 80 V - ensures low standby power loss in always-on sensor interface circuits. |
| Thermal resistance (Rth(j-a)) | 625 K/W - defines maximum power dissipation (200 mW) under natural convection on standard FR4 layout. |
| AEC-Q101 qualified | Yes - validated for automotive powertrain and body electronics per stress test requirements. |
Pinout & Package
SOT323 (SC-70) plastic surface-mounted package; 3-lead, very small outline with 1.3 mm × 1.1 mm footprint and 0.9 mm height. Standard reflow soldering only; no wave soldering recommended.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Anode (Diode 1) | Input node for first diode path; connects to signal source or switch node requiring unidirectional conduction. |
| 2 | Anode (Diode 2) | Independent input node for second diode path; enables dual-rail clamping or OR-ing functionality. |
| 3 | Common cathode | Shared output node; simplifies PCB routing by eliminating separate cathode traces for both diodes. |
Key Features
| Feature | Design Value |
|---|---|
| Dual common-cathode configuration | Reduces component count and board area vs. two discrete SOD-323 diodes; eliminates cathode interconnect trace. |
| 4 ns reverse recovery time | Enables reliable operation in >25 MHz clocked switching applications without reverse conduction artifacts. |
| 1.5 pF junction capacitance | Maintains signal integrity in 50 Ω RF paths; suitable for AM/FM detector and antenna switch bias networks. |
| AEC-Q101 qualification | Validated for automotive under-hood environments including temperature cycling, humidity, and mechanical shock. |
| Low leakage (0.5 µA @ 80 V) | Preserves accuracy in precision voltage reference buffers and high-impedance sensor front-ends. |
Applications
| Automotive LED Driver Feedback | USB Port ESD Clamp |
|---|---|
Use Scenario: Clamping feedback voltage from LED string sense resistor in constant-current automotive lighting driver. IC Role / Device Role / Timing Role: Fast transient suppressor protecting op-amp input during load dump or hot-swap events. Use Value: 4 ns trr prevents latch-up during 100 ns surge pulses; 100 V VR withstands ISO 7637-2 Pulse 5a. |
Use Scenario: Bidirectional ESD protection on USB 2.0 D+/D− lines before USB transceiver IC. IC Role / Device Role / Timing Role: Low-capacitance shunt clamp diverting IEC 61000-4-2 ±8 kV contact discharge. Use Value: 1.5 pF Cd avoids signal rise-time degradation; common-cathode layout saves 0.5 mm² PCB area. |
| High-Frequency Envelope Detector | Industrial Sensor Signal Conditioning |
Use Scenario: Demodulating AM carrier signals in wireless sensor node receiver front-end. IC Role / Device Role / Timing Role: Peak detector diode operating at 433 MHz ISM band with minimal phase distortion. Use Value: 1.5 pF Cd and 4 ns trr preserve modulation fidelity; SOT323 enables placement within λ/10 trace length. |
Use Scenario: Level-shifting analog output of MEMS pressure sensor into 3.3 V ADC input range. IC Role / Device Role / Timing Role: Precision forward-biased clamp limiting ADC input to VDD + 0.7 V. Use Value: 0.5 µA IR at 80 V ensures <1 nA error current in 10 MΩ sensor bridge arms. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed dual-diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BAV70T | SOT416 (SC-75) package; Rth(j-a) = 350 K/W; IF = 150 mA at Ts = 90 °C. | Better thermal performance in thermally constrained layouts; slightly larger footprint than SOT323. | Select when board-level thermal management allows higher power dissipation and smaller Rth(j-a) is critical. |
| BAV99W | Same SOT323 package; trr = 4 ns; VR = 70 V; Cd = 2 pF; IF = 215 mA. | Lower VR rating limits use in 48 V systems; higher Cd reduces RF bandwidth margin. | Choose only if 70 V VR suffices and higher forward current is prioritized over leakage or capacitance. |
Compared with BAV70W/SN/8X, BAV70T offers superior thermal resistance but larger size, while BAV99W trades reverse voltage and capacitance for higher forward current-making BAV70W optimal for 100 V, low-Cd, AEC-Q101–compliant compact designs.
Availability
BAV70W/SN/8X is available at Aetrix Electronics and suitable for automotive lighting control, USB interface protection, RF detector circuits, and industrial sensor signal conditioning requiring stable component supply across production lifecycles.
Supply support for BAV70W/SN/8X includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert specializing in high-performance, high-reliability discrete, logic, and MOSFET solutions, with roots in NXP's former standard products division.
The BAV70 series belongs to Nexperia's high-speed switching diode product line, engineered specifically for automotive and industrial applications demanding fast recovery, low capacitance, and AEC-Q101 compliance in miniaturized SMD packages.
FAQ
Is BAV70W/SN/8X suitable for reflow soldering only?
Yes. Nexperia specifies reflow soldering as the sole recommended process for BAV70W/SN/8X. Wave soldering is not supported due to thermal limitations of the SOT323 package and risk of delamination. Reflow profiles must comply with JEDEC J-STD-020, peak temperature ≤260 °C, and dwell time within specification limits.
What is the maximum forward current derating above 25 °C ambient?
BAV70W/SN/8X has a linear derating slope of −1.4 mA/°C above Tamb = 25 °C, reaching zero at 150 °C junction temperature. At 85 °C ambient, maximum continuous IF drops to approximately 91 mA, calculated using Ptot = 200 mW and VF ≈ 0.855 V at 10 mA.
Does the common-cathode configuration affect reverse isolation between anodes?
No. The two diodes share only the cathode metallization; their anode regions are fully isolated. Reverse leakage (IR) remains independent per diode-measured at ≤0.5 µA each at VR = 80 V-ensuring no crosstalk in dual-rail clamping applications.
How does AEC-Q101 qualification impact BAV70W/SN/8X usage in non-automotive designs?
AEC-Q101 qualification confirms robustness against temperature cycling, high-acceleration shock, and humidity exposure-making BAV70W/SN/8X especially reliable in harsh industrial or outdoor deployments. It does not imply automotive-specific features like PPAP documentation unless explicitly ordered under automotive part numbering.
BAV70W/SN/8X Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- SC-70, SOT-323
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Diode Configuration:
- 1 Pair Common Cathode
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 100 V
- Current - Average Rectified (Io) (per Diode):
- 175mA (DC)
- Voltage - Forward (Vf) (Max) @ If:
- 1.25 V @ 150 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- 4 ns
- Current - Reverse Leakage @ Vr:
- 500 nA @ 80 V
- Operating Temperature - Junction:
- 150°C (Max)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-323
BAV70W/SN/8X FAQ
1.How can I place an order for BAV70W/SN/8X through Aetrix?
Please submit a Request for Quotation (RFQ) for BAV70W/SN/8X on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAV70W/SN/8X reliable?
The price and inventory of BAV70W/SN/8X are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAV70W/SN/8X is usually 5 days.
3.What payment methods are accepted for BAV70W/SN/8X?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAV70W/SN/8X transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAV70W/SN/8X?
BAV70W/SN/8X orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAV70W/SN/8X order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAV70W/SN/8X?
For technical support, including BAV70W/SN/8X datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAV70W/SN/8X requirements.
6.How does Aetrix verify that BAV70W/SN/8X is sourced from the original manufacturer or authorized distributors?
All BAV70W/SN/8X products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAV70W/SN/8X meets industry standards.
7.What is the process for return or replacement of BAV70W/SN/8X?
All BAV70W/SN/8X units undergo pre-shipment inspection (PSI). If there is an issue with BAV70W/SN/8X, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAV70W/SN/8X part is unused and in its original packaging.
Return procedure for BAV70W/SN/8X:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BAV70W/SN/8X Tags
-
BAV99-7-F
Diodes Incorporated
-
BAT54C-7-F
Diodes Incorporated
-
BAV99,215
Nexperia USA Inc.
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BAT54SLT1G
onsemi
-
BAV70LT1G
onsemi
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BAT54CLT1G
onsemi
-
BAT54S-7-F
Diodes Incorporated
-
BAV99LT1G
onsemi
-
BAT54S,215
Nexperia USA Inc.
-
BAS40-04LT1G
onsemi
-
MMBD1503-TP
Micro Commercial Co
-
BAV99WT1G
onsemi
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