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Nexperia USA Inc. BAV70W/ZLX
- Part No.:
- BAV70W/ZLX
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Diode Arrays
- Package:
- SC-70, SOT-323
- Datasheet:
-
BAV70W/ZLX.pdf
- Description:
- DIODE ARRAY GP 100V 175MA SOT323
- Quantity:
- Payment:
- Shipping:
Inventory:4,393
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Product details
Overview
BAV70W from Nexperia is a high-speed switching double diode in SOT323 (SC-70) package, featuring common-cathode dual configuration, 100 V reverse voltage rating, ≤4 ns reverse recovery time, and ≤1.5 pF junction capacitance - deployed in signal routing and clamping circuits of USB interface protection and RF front-end bias networks.
For engineers reviewing the BAV70W datasheet, BAV70W pinout, BAV70W application, or BAV70W equivalent, this page delivers verified pin functions, real-world timing and leakage performance at 25 °C and 150 °C, thermal resistance (625 K/W), and validated alternatives for dual-diode high-speed switching roles.
Technical Context
The BAV70W integrates two independent silicon switching diodes sharing a common cathode terminal, enabling compact dual-path clamping or steering without inter-device mismatch. Its low trr (≤4 ns) and Cd (≤1.5 pF) support operation up to ~200 MHz in small-signal AC coupling and transient suppression.
Designed for surface-mount reliability on FR4 PCBs with single-sided copper, it sustains 175 mA DC forward current per diode and handles 4 A non-repetitive surge (tp = 1 µs), while maintaining IR ≤ 0.5 µA at VR = 80 V and 25 °C - critical for low-leakage bias networks.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Voltage (VR) | 100 V - supports rail-to-rail clamping in 3.3 V/5 V/12 V logic and analog signal paths without breakdown. |
| Reverse Recovery Time (trr) | ≤4 ns - enables clean switching in >100 MHz digital signal routing and RF detector applications. |
| Junction Capacitance (Cd) | ≤1.5 pF at 0 V - minimizes signal loading in high-frequency AC coupling and antenna tuning circuits. |
| Forward Voltage (VF) | 855 mV at IF = 10 mA - ensures low conduction loss in active bias and level-shifting networks. |
| Reverse Leakage (IR) | ≤0.5 µA at VR = 80 V, 25 °C - preserves signal integrity in precision reference and sensor conditioning stages. |
| Thermal Resistance (Rth(j-a)) | 625 K/W - defines derating curve for continuous operation up to 150 °C junction temperature on standard FR4. |
Pinout & Package
Encapsulated in SC-70 (SOT323) plastic package: 2.0 mm × 1.25 mm × 0.95 mm body, 1.3 mm lead pitch, 3-terminal surface-mount outline with gull-wing leads.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (A1) | Anode of Diode 1 | Input node for first switching path; connects to signal source or pull-up in clamping topology. |
| 2 (A2) | Anode of Diode 2 | Independent input node for second path; enables dual-rail protection or differential signal steering. |
| 3 (CC) | Common Cathode | Shared output node tied to reference (e.g., VCC or ground); simplifies PCB layout and reduces parasitic inductance. |
Key Features
| Feature | Design Value |
|---|---|
| High-speed switching | trr ≤ 4 ns enables use in >100 MHz clock/data line protection without signal distortion. |
| Low junction capacitance | Cd ≤ 1.5 pF minimizes insertion loss and phase shift in RF matching networks and high-Z sensor interfaces. |
| Common-cathode dual configuration | Reduces component count and board area vs. discrete diodes; maintains matched thermal and electrical behavior. |
| Low leakage at elevated temperature | IR ≤ 100 µA at VR = 80 V and Tj = 150 °C ensures stable bias in automotive under-hood modules. |
Applications
| USB 2.0 ESD Protection | RF Signal Steering |
|---|---|
Use Scenario: Clamping D+ and D− lines against ±15 kV HBM ESD transients while preserving signal integrity up to 480 Mbps. IC Role / Device Role / Timing Role: Dual-anode, common-cathode diode pair provides symmetrical bidirectional clamping to VBUS and GND rails. Use Value: ≤4 ns trr prevents data eye closure; ≤1.5 pF Cd avoids impedance discontinuity in 90 Ω differential USB traces. |
Use Scenario: Routing RF signals between antenna switch and transceiver in sub-3 GHz IoT modules. IC Role / Device Role / Timing Role: High-speed switching diode pair selects transmit/receive paths via DC bias control on A1/A2. Use Value: Low VF (855 mV @ 10 mA) minimizes insertion loss; matched trr ensures phase coherence across both paths. |
| Low-Power Sensor Biasing | Digital Logic Level Translation |
Use Scenario: Providing stable bias current to photodiode or MEMS sensor elements in battery-powered wearables. IC Role / Device Role / Timing Role: Common-cathode configuration supplies matched forward current to dual sensing elements from shared reference. Use Value: IR ≤ 0.5 µA at 25 °C ensures <10 nA error current in picoampere-level sensor readouts. |
Use Scenario: Translating 1.8 V GPIO outputs to 3.3 V I²C bus levels with minimal propagation delay. IC Role / Device Role / Timing Role: Anode-connected inputs clamp overshoot; cathode ties to 3.3 V rail for passive level shifting. Use Value: ≤4 ns trr avoids pulse stretching in 400 kHz I²C timing budgets; VF consistency ensures predictable threshold crossing. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual high-speed switching diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BAV99W | Same SOT323 package; trr ≤ 4 ns, but VR = 70 V (vs. 100 V), VF = 1.25 V @ 150 mA (vs. 0.855 V @ 10 mA) | Lower VR limits use in 12 V systems; higher VF increases power loss in high-current bias networks | Select when VR ≤ 70 V suffices and cost sensitivity outweighs leakage or VF requirements |
| MMBD7000 | SOT23 package (larger footprint); trr ≤ 4 ns, VR = 100 V, but Cd = 2.0 pF (vs. 1.5 pF), Rth(j-a) = 450 K/W (vs. 625 K/W) | Larger thermal resistance improves power handling; higher Cd degrades >100 MHz signal fidelity | Select when board space allows SOT23 and thermal margin >100 mW is required over RF performance |
Compared with BAV99W and MMBD7000, the BAV70W uniquely balances 100 V VR, ≤4 ns trr, ≤1.5 pF Cd, and SOT323 miniaturization - making it optimal for space-constrained, high-frequency signal integrity–critical designs where leakage and thermal footprint must both be minimized.
Availability
BAV70W is available at Aetrix Electronics and suitable for USB interface protection, RF front-end switching, low-power sensor biasing, and digital level translation requiring stable component supply across production volumes and design-in cycles.
Supply support for BAV70W includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert delivering high-performance, reliable discrete, logic, and MOSFET devices optimized for efficiency and miniaturization in consumer, industrial, and communications markets.
The BAV70W belongs to Nexperia's high-speed switching diode product line, engineered specifically for signal integrity–driven applications demanding ultrafast recovery, low capacitance, and consistent dual-diode matching in miniature packages.
FAQ
What is the maximum continuous forward current per diode in the BAV70W?
The BAV70W supports 175 mA DC forward current per diode at Tamb ≤ 25 °C, derated linearly above that ambient temperature based on its 625 K/W thermal resistance and 150 °C maximum junction temperature limit.
Can the BAV70W be used in automotive applications?
No - the BAV70W is explicitly marked as non-automotive qualified in its revision history. It lacks AEC-Q101 qualification and has not undergone automotive-grade stress testing; Nexperia offers separate -Q qualified variants for such use cases.
How does the common-cathode configuration affect PCB layout?
The shared cathode (Pin 3) reduces net count and enables symmetric trace routing from both anodes (Pins 1 and 2) to the same reference node, minimizing loop area and parasitic inductance - especially beneficial in high-frequency ESD and RF paths.
Is the BAV70W compatible with lead-free reflow soldering?
Yes - the device is rated for standard lead-free reflow profiles per J-STD-020, with peak temperatures up to 260 °C. Its SOT323 footprint matches IPC-7351B recommendations for SC-70 packages, including 0.55 mm pad width and 1.325 mm center-to-center spacing.
BAV70W/ZLX Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- SC-70, SOT-323
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Diode Configuration:
- 1 Pair Common Cathode
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 100 V
- Current - Average Rectified (Io) (per Diode):
- 175mA (DC)
- Voltage - Forward (Vf) (Max) @ If:
- 1.25 V @ 150 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- 4 ns
- Current - Reverse Leakage @ Vr:
- 500 nA @ 80 V
- Operating Temperature - Junction:
- 150°C (Max)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-323
BAV70W/ZLX FAQ
1.How can I place an order for BAV70W/ZLX through Aetrix?
Please submit a Request for Quotation (RFQ) for BAV70W/ZLX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAV70W/ZLX reliable?
The price and inventory of BAV70W/ZLX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAV70W/ZLX is usually 5 days.
3.What payment methods are accepted for BAV70W/ZLX?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAV70W/ZLX transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAV70W/ZLX?
BAV70W/ZLX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAV70W/ZLX order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAV70W/ZLX?
For technical support, including BAV70W/ZLX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAV70W/ZLX requirements.
6.How does Aetrix verify that BAV70W/ZLX is sourced from the original manufacturer or authorized distributors?
All BAV70W/ZLX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAV70W/ZLX meets industry standards.
7.What is the process for return or replacement of BAV70W/ZLX?
All BAV70W/ZLX units undergo pre-shipment inspection (PSI). If there is an issue with BAV70W/ZLX, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAV70W/ZLX part is unused and in its original packaging.
Return procedure for BAV70W/ZLX:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BAV70W/ZLX Tags
-
BAV99-7-F
Diodes Incorporated
-
BAT54C-7-F
Diodes Incorporated
-
BAV99,215
Nexperia USA Inc.
-
BAT54SLT1G
onsemi
-
BAV70LT1G
onsemi
-
BAT54CLT1G
onsemi
-
BAT54S-7-F
Diodes Incorporated
-
BAV99LT1G
onsemi
-
BAT54S,215
Nexperia USA Inc.
-
BAS40-04LT1G
onsemi
-
MMBD1503-TP
Micro Commercial Co
-
BAV99WT1G
onsemi
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