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Diodes Incorporated BAV756DW-7

Part No.:
BAV756DW-7
Manufacturer:
Diodes Incorporated
Category:
Diode Arrays
Package:
6-TSSOP, SC-88, SOT-363
Datasheet:
AetrixBAV756DW-7.pdf
Description:
DIODE ARRAY GP 75V 150MA SOT-363
Quantity:
Payment:
Payment
Shipping:
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Inventory:2,483

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Product details

Overview

BAV756DW-7 from Diodes Incorporated is a quad surface-mount switching diode array integrating one BAV70 dual-diode circuit and one BAW56 dual-diode circuit in a single SOT-363 package, rated for 75 V peak repetitive reverse voltage, 300 mA forward current, and 4.0 ns reverse recovery time, used in compact full-wave bridge rectification and signal routing in portable power management circuits.

For engineers reviewing the BAV756DW-7 datasheet, BAV756DW-7 pinout, BAV756DW-7 application, or BAV756DW-7 equivalent, key selection criteria include reverse recovery time, forward voltage at 10 mA and 150 mA, total capacitance at 0 V, thermal resistance junction-to-ambient (625 °C/W), and SOT-363 terminal configuration for high-density PCB layout.

Technical Context

The BAV756DW-7 integrates two independent dual-diode configurations - one BAV70 (common-cathode pair) and one BAW56 (common-anode pair) - enabling flexible full-wave bridge implementation with only four external connections. Its monolithic construction ensures matched characteristics across elements.

Designed for high-speed switching up to ~100 MHz, it leverages epitaxial planar construction and low-junction-capacitance geometry (2.0 pF at 0 V) to minimize signal distortion and switching loss in RF detector, clamp, and logic-level translation circuits.

Key Specifications

ParameterValue and Actual Design Meaning
PackageSOT-363: 6-pin ultra-small outline, footprint area 2.2 × 1.3 mm, compatible with automated pick-and-place and reflow soldering.
VRRM75 V: Maximum repetitive reverse blocking voltage per diode - defines safe operating range in DC-DC feedback paths and AC line sensing.
IF300 mA: Absolute maximum continuous forward current - supports moderate-power signal switching without derating at TA ≤ 60°C.
trr4.0 ns: Measured at IF = IR = 10 mA, RL = 100 Ω - enables clean edge transitions in 50–100 MHz clock routing and pulse shaping.
CT2.0 pF @ VR = 0 V, f = 1 MHz - low junction capacitance preserves bandwidth in RF detector and high-frequency sampling applications.
VF0.855 V @ IF = 10 mA: Forward drop determines conduction loss and logic-level compatibility in active clamping and level-shifting circuits.
RθJA625 °C/W: Thermal resistance from junction to ambient on FR-4 board - requires careful copper pour design to sustain >150 mW dissipation at room temperature.

Pinout & Package

SOT-363 package: 6-pin, dual-row, gull-wing leaded surface-mount outline with 0.65 mm pitch; case material is UL 94V-0 green molding compound; moisture sensitivity level 1.

Pin/TerminalCircuit RoleDesign Meaning
1Anode of BAW56 Diode 1Input node for common-anode pair - connects to positive rail or signal source in clamp/bridge configurations.
2Cathode of BAV70 Diode 1Shared cathode node for first BAV70 diode - ties to output or reference point in dual-series switching paths.
3Cathode of BAW56 Diode 1 & Anode of BAV70 Diode 1Internal interconnect node - enables direct full-wave bridge formation without external wiring between BAV70 and BAW56 sections.
4Anode of BAV70 Diode 2Second anode in common-cathode BAV70 pair - used for complementary switching or polarity-reversed signal path.
5Cathode of BAV70 Diode 2 & Cathode of BAW56 Diode 2Shared cathode node - serves as common return for both dual-diode circuits, simplifying ground routing.
6Anode of BAW56 Diode 2Second anode in common-anode BAW56 pair - completes symmetrical bridge topology with Pin 1.

Key Features

FeatureDesign Value
Integrated BAV70 + BAW56 topologyEnables full-wave bridge rectification using only four external terminals - reduces component count and board space vs. discrete diode solutions.
4.0 ns reverse recovery timeMinimizes switching tail current and cross-conduction loss in high-frequency (>20 MHz) PWM and envelope detection circuits.
2.0 pF junction capacitancePreserves signal integrity in 50–200 MHz RF detector and AM demodulator front-ends without added tuning components.
Lead-free / RoHS-compliant constructionMeets IPC-J-STD-020D Level 1 moisture sensitivity and JEDEC JESD22-A113 qualification - supports no-clean reflow and long-term reliability in consumer electronics.

Applications

Portable USB Power SwitchingRF Signal Detector

Use Scenario: Automatic USB port power path selection between wall adapter and battery in handheld devices.

IC Role / Device Role / Timing Role: Quad diode array performs OR-ing and reverse-polarity protection while enabling fast switchover (<100 ns).

Use Value: 0.855 V forward drop at 10 mA limits voltage loss in 5 V supply rails; 4.0 ns trr prevents shoot-through during dynamic load transitions.

Use Scenario: Envelope detection in 868 MHz ISM-band wireless sensor transmitters.

IC Role / Device Role / Timing Role: High-speed switching diode pair rectifies RF carrier to extract baseband modulation signal.

Use Value: 2.0 pF CT maintains detector Q-factor above 15 at 868 MHz; matched BAV70/BAW56 elements ensure amplitude symmetry.

Full-Wave Bridge RectifierLogic-Level Clamping Circuit

Use Scenario: Low-voltage AC-to-DC conversion in isolated auxiliary power supplies for industrial I/O modules.

IC Role / Device Role / Timing Role: Single-package full-wave bridge formed by internal BAV70/BAW56 interconnect - replaces four discrete SOD-323 diodes.

Use Value: 75 V VRWM supports 24 V AC input; 300 mA IF rating accommodates 100 mA load with 3× safety margin.

Use Scenario: Protecting 3.3 V microcontroller GPIO pins from 5 V bus transients in mixed-voltage system interfaces.

IC Role / Device Role / Timing Role: Dual-diode clamp (one BAV70 + one BAW56) limits input swing to VDD + 0.7 V and GND − 0.7 V.

Use Value: Matched VF across elements ensures symmetric clamping thresholds; 0.006 g weight minimizes mechanical stress on fine-pitch MCU pads.

Equivalent & Alternatives

The following parts are listed as comparable options for similar quad switching diode array applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
BAV99DW-7-FSame SOT-363 package; dual BAV99 (common-cathode) structure only - lacks BAW56 common-anode section.Cannot form full-wave bridge without external diodes; suitable only for dual-series or dual-parallel switching.Select when only matched common-cathode pairs are needed and board space allows extra components.
MMBD7000DW-7-FHigher VRRM (100 V); slower trr (6.0 ns); same 2.0 pF CT; identical pinout and marking.Better suited for 48 V telecom line interface; marginal for >50 MHz RF detection due to longer recovery.Prefer for higher-voltage industrial sensing where speed is secondary to blocking capability.

Compared with BAV99DW-7-F and MMBD7000DW-7-F, the BAV756DW-7 uniquely combines complementary BAV70/BAW56 topologies in one package - enabling true 4-terminal full-wave rectification without external diodes, while maintaining 4.0 ns speed and 2.0 pF capacitance critical for RF and portable power designs.

Availability

BAV756DW-7 is available at Aetrix Electronics and suitable for portable USB power switching, RF signal detection, full-wave bridge rectification, and logic-level clamping requiring stable component supply and consistent parametric performance across production lots.

Supply support for BAV756DW-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-performance, cost-optimized components for power management, signal integrity, and protection applications.

The BAV756DW-7 belongs to Diodes' general-purpose switching diode array product line, engineered specifically for space-constrained, high-speed signal routing and compact bridge rectification in battery-powered and RF-sensitive systems.

FAQ

What is the maximum allowable junction temperature for BAV756DW-7?

The BAV756DW-7 has an operating junction temperature range of –65 °C to +150 °C. Its absolute maximum junction temperature is +150 °C, validated under conditions defined in Note 2 of the datasheet - including single or multiple diodes loaded on FR-4 with recommended pad layout. Derating begins at +60 °C ambient per Figure 1.

Can BAV756DW-7 be used as a standalone full-wave bridge rectifier?

Yes - the internal connection between Pin 3 (cathode of BAW56 Diode 1 and anode of BAV70 Diode 1) and shared cathodes on Pins 2 and 5 enables full-wave bridge operation with just four external connections: AC inputs on Pins 1 and 6, DC+ on Pin 3, and DC− on Pin 5. No external diodes are required.

Is the SOT-363 package of BAV756DW-7 compatible with standard reflow profiles?

Yes - the SOT-363 package uses matte tin-plated Alloy 42 leads and green molding compound qualified to J-STD-020D Level 1 moisture sensitivity. It supports standard Pb-free reflow profiles (peak 260 °C, 30 sec max), provided board layout follows Diodes' recommended pad dimensions and thermal relief patterns.

How does the reverse leakage current change at elevated temperature?

At TJ = 150 °C and VR = 75 V, the reverse current increases to 50 μA (max), versus 2.5 μA at 25 °C - a 20× increase. At VR = 25 V and TJ = 150 °C, leakage is limited to 30 μA (max), confirming stable blocking behavior even near thermal limits.

BAV756DW-7 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
6-TSSOP, SC-88, SOT-363
Packaging:
Tape & Reel (TR)
Product Status:
Discontinued at Digi-Key
Diode Configuration:
2 Pair CA + CC
Technology:
Standard
Voltage - DC Reverse (Vr) (Max):
75 V
Current - Average Rectified (Io) (per Diode):
150mA
Voltage - Forward (Vf) (Max) @ If:
1.25 V @ 150 mA
Speed:
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):
4 ns
Current - Reverse Leakage @ Vr:
2.5 µA @ 75 V
Operating Temperature - Junction:
-65°C ~ 150°C
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-363

BAV756DW-7 FAQ

1.How can I place an order for BAV756DW-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for BAV756DW-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BAV756DW-7 reliable?

The price and inventory of BAV756DW-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAV756DW-7 is usually 5 days.

3.What payment methods are accepted for BAV756DW-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAV756DW-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BAV756DW-7?

BAV756DW-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BAV756DW-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BAV756DW-7?

For technical support, including BAV756DW-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAV756DW-7 requirements.

6.How does Aetrix verify that BAV756DW-7 is sourced from the original manufacturer or authorized distributors?

All BAV756DW-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAV756DW-7 meets industry standards.

7.What is the process for return or replacement of BAV756DW-7?

All BAV756DW-7 units undergo pre-shipment inspection (PSI). If there is an issue with BAV756DW-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BAV756DW-7 part is unused and in its original packaging.

Return procedure for BAV756DW-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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