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Nexperia USA Inc. BAV756S,115
- Part No.:
- BAV756S,115
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Diode Arrays
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
BAV756S,115.pdf
- Description:
- DIODE ARRAY GP 90V 250MA 6-TSSOP
- Quantity:
- Payment:
- Shipping:
Inventory:27,695
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Product details
Overview
BAV756S from Nexperia is a quad high-speed switching diode array in SOT363-3 (TSSOP6) package, featuring 4 ns reverse recovery time, ≤2 pF capacitance, and 90 V reverse voltage rating per diode; used in compact DC-DC converter snubbers and high-frequency signal routing circuits.
For engineers reviewing the BAV756S datasheet, BAV756S pinout, BAV756S application, or BAV756S equivalent, key selection criteria include trr ≤4 ns at IF=10 mA, common-anode/cathode topology for dual-series/dual-parallel configurations, and thermal resistance of 255 K/W junction-to-solder point under FR4 mounting.
Technical Context
The BAV756S integrates four independent silicon switching diodes in a single TSSOP6 package with shared terminals: pins 1 and 5 are isolated anodes (D1, D4), pins 2 and 4 are isolated cathodes (D2, D3), while pin 3 serves as common anode for D2/D3 and pin 6 as common cathode for D1/D4 - enabling series-aided or parallel-connected diode pairs without external wiring.
Its 4 ns trr is measured under standardized conditions (IF = IR = 10 mA, RL = 100 Ω, IR(meas) = 1 mA, Tamb = 25 °C), and its 2 pF capacitance is specified at VR = 0 V, f = 1 MHz, making it suitable for >100 MHz signal path isolation and RF detector front-ends where low charge storage is critical.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| trr | ≤4 ns - enables clean switching in 100+ MHz clock distribution and pulse shaping circuits |
| Cd | ≤2 pF at VR = 0 V - minimizes signal loading in RF coupling and sampling applications |
| VRRM | 90 V - supports operation across 24 V industrial bus and 48 V telecom power rails |
| IF(max) | 250 mA continuous per diode at Ts = 60 °C - sufficient for low-power logic clamping and level shifting |
| Rth(j-sp) | 255 K/W - defines thermal derating on standard FR4 PCB with single-sided copper |
| VF | 855 mV at IF = 10 mA - ensures low forward drop in high-efficiency bias networks |
| IR | 0.5 µA at VR = 80 V, Tamb = 25 °C - guarantees minimal leakage in precision sample-hold stages |
Pinout & Package
Package: SOT363-3 (TSSOP6), 6-lead plastic surface-mount package with 0.65 mm pitch, 2.2 mm × 1.3 mm body size, and exposed solder pad footprint optimized for reflow and wave soldering per Nexperia's sot363-3_fr and sot363-3_fw guidelines.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Anode (Diode 1) | Independent anode terminal for first diode; connects to input node in clamp or steering configuration |
| 2 | Cathode (Diode 2) | Independent cathode terminal for second diode; enables discrete routing of D2 output |
| 3 | Common Anode (D2 & D3) | Shared anode node allowing D2 and D3 to be connected in parallel or series-aided |
| 4 | Cathode (Diode 3) | Independent cathode terminal for third diode; supports dual-output rectifier topologies |
| 5 | Anode (Diode 4) | Independent anode terminal for fourth diode; isolates D4 for dedicated signal path use |
| 6 | Common Cathode (D1 & D4) | Shared cathode node enabling D1 and D4 to form a matched pair for differential clamping |
Key Features
| Feature | Design Value |
|---|---|
| Quad-diode integration | Four discrete high-speed diodes in one SOT363-3 footprint reduces board area by ~75% vs. four SOD-323 devices |
| Low trr + low Cd synergy | 4 ns recovery time combined with ≤2 pF capacitance enables <100 ps transition jitter in fast edge-detection circuits |
| Thermally optimized layout | 255 K/W junction-to-solder-point resistance allows 350 mW total dissipation with ≤60 °C case temperature on FR4 |
| Common-terminal flexibility | Pins 3 and 6 support configurable series/parallel diode arrangements without external traces or vias |
| Low-leakage performance | 0.5 µA max IR at 80 V enables stable DC bias in high-impedance sensor interfaces up to 150 °C ambient |
Applications
| DC-DC Converter Snubber | High-Speed Logic Clamping |
|---|---|
|
Use Scenario: Suppressing voltage spikes across synchronous MOSFETs in 500 kHz–2 MHz buck converters. IC Role / Device Role / Timing Role: Fast-recovery diode in RCD snubber network, absorbing turn-off energy before MOSFET avalanche. Use Value: 4 ns trr limits spike duration to <10 ns, reducing EMI generation and improving converter efficiency by minimizing overlap loss. |
Use Scenario: Protecting FPGA I/O banks from overvoltage during hot-plug or ESD events. IC Role / Device Role / Timing Role: Clamp diode between I/O line and VCCIO/GND rails, conducting within 1 ns of overvoltage onset. Use Value: ≤2 pF capacitance avoids signal integrity degradation on 100+ Mbps LVCMOS buses while maintaining sub-100 ps response. |
| Dual-Series RF Detector | Differential Signal Steering |
|
Use Scenario: Full-wave demodulation of 433 MHz ISM band signals in wireless sensor receivers. IC Role / Device Role / Timing Role: Two diodes (D1+D4) configured as series-connected envelope detector pair with shared cathode (pin 6). Use Value: Matched VF and trr across D1/D4 ensure symmetrical positive/negative half-cycle conduction, yielding <0.5 dB amplitude imbalance. |
Use Scenario: Routing analog sensor outputs to dual ADC inputs based on microcontroller GPIO state. IC Role / Device Role / Timing Role: Bidirectional steering element using D2/D3 common-anode (pin 3) and isolated cathodes (pins 2,4). Use Value: Independent cathode control allows <5 ns channel switching with no cross-conduction due to 0.5 µA max IR at 25 V bias. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed switching diode array applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BAV99,115 | Single dual-diode (2 diodes), SOT23-3 package; trr = 4 ns, Cd = 2 pF, but no common-anode/cathode pins | Lacks pin 3/6 common terminals; requires external wiring for parallel/series configurations | Select when board space permits discrete placement and only two diodes are needed per function |
| PMEG3005AESF,115 | Schottky diode array (4 diodes), SOT363-3; VF = 390 mV @ 5 mA, but trr not specified (Schottky has no recovery time) | No reverse recovery; unsuitable for snubbers requiring controlled charge removal | Select for ultra-low VF applications like 3.3 V logic clamping where trr is irrelevant |
Compared with BAV99,115, the BAV756S provides integrated quad topology and common-node flexibility; compared with PMEG3005AESF,115, it delivers defined 4 ns trr essential for snubber timing control, albeit with higher VF.
Availability
BAV756S is available at Aetrix Electronics and suitable for high-frequency power conversion, RF signal conditioning, and precision analog protection requiring stable component supply across automotive infotainment, industrial PLC I/O modules, and medical sensor front-ends.
Supply support for BAV756S includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert delivering high-performance, reliable discrete, logic, and MOSFET devices with focus on efficiency, miniaturization, and robustness for industrial and consumer systems.
The BAV756S belongs to Nexperia's high-speed switching diode product line, engineered specifically for space-constrained, high-frequency applications demanding predictable trr, low Cd, and multi-diode integration in miniature packages.
FAQ
What is the maximum continuous forward current per diode in the BAV756S?
The BAV756S supports 250 mA continuous forward current per diode at a solder point temperature (Ts) of 60 °C, as specified in Table 5 (Limiting values). This rating assumes mounting on FR4 PCB with single-sided copper and standard footprint per Figure 8. Derating is required above 60 °C Ts.
Can pins 3 and 6 be used simultaneously to configure two independent series diode strings?
Yes: pin 3 (common anode of D2/D3) and pin 6 (common cathode of D1/D4) operate independently. You can route D1–D2 as one series string (anode D1 → cathode D2) and D4–D3 as another (anode D4 → cathode D3), using pins 1, 2, 4, 5 as endpoints - no internal shorting occurs between these groups.
Is the BAV756S qualified for automotive applications?
No. Per Revision History (Section 14), the BAV756S v.8 data sheet explicitly states "Product(s) changed to non-automotive qualification" and directs users to Nexperia's website for automotive-qualified (-Q) alternatives. It is not tested or certified to AEC-Q101.
How does the 255 K/W thermal resistance impact PCB layout design?
The 255 K/W junction-to-solder-point resistance (Table 6) means a 350 mW total power dissipation raises junction temperature by 89 °C above solder point temperature. To maintain Tj ≤ 150 °C, keep solder point ≤ 61 °C via adequate copper pour, thermal vias under the exposed pad, and avoidance of nearby heat sources.
BAV756S,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Diode Configuration:
- 2 Pair CA + CC
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 90 V
- Current - Average Rectified (Io) (per Diode):
- 250mA (DC)
- Voltage - Forward (Vf) (Max) @ If:
- 1.25 V @ 150 mA
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 4 ns
- Current - Reverse Leakage @ Vr:
- 500 nA @ 80 V
- Operating Temperature - Junction:
- 150°C (Max)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-TSSOP
BAV756S,115 FAQ
1.How can I place an order for BAV756S,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for BAV756S,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAV756S,115 reliable?
The price and inventory of BAV756S,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAV756S,115 is usually 5 days.
3.What payment methods are accepted for BAV756S,115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAV756S,115 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAV756S,115?
BAV756S,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAV756S,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAV756S,115?
For technical support, including BAV756S,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAV756S,115 requirements.
6.How does Aetrix verify that BAV756S,115 is sourced from the original manufacturer or authorized distributors?
All BAV756S,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAV756S,115 meets industry standards.
7.What is the process for return or replacement of BAV756S,115?
All BAV756S,115 units undergo pre-shipment inspection (PSI). If there is an issue with BAV756S,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAV756S,115 part is unused and in its original packaging.
Return procedure for BAV756S,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BAV756S,115 Tags
-
BAV99-7-F
Diodes Incorporated
-
BAT54C-7-F
Diodes Incorporated
-
BAV99,215
Nexperia USA Inc.
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BAT54SLT1G
onsemi
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BAV70LT1G
onsemi
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BAT54CLT1G
onsemi
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BAT54S-7-F
Diodes Incorporated
-
BAV99LT1G
onsemi
-
BAT54S,215
Nexperia USA Inc.
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BAS40-04LT1G
onsemi
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MMBD1503-TP
Micro Commercial Co
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BAV99WT1G
onsemi
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