My Inquiry
My Account
Nexperia USA Inc. BAV99S/DG/B3,115
- Part No.:
- BAV99S/DG/B3,115
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Diode Arrays
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
BAV99S/DG/B3,115.pdf
- Description:
- DIODE ARRAY GP 100V 200MA 6TSSOP
- Quantity:
- Payment:
- Shipping:
Inventory:4,707
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
BAV99S/DG/B3,115 from Nexperia is a high-speed quadruple switching diode array in SOT363 (SC-88) package, configured as two independent series-connected diode pairs. It delivers trr ≤4 ns reverse recovery time, Cd ≤1.5 pF capacitance at 1 MHz/0 V, and VR = 100 V peak reverse voltage - enabling fast signal routing and polarity protection in compact automotive and industrial PCBs.
For engineers reviewing the BAV99S/DG/B3,115 datasheet, BAV99S/DG/B3,115 pinout, BAV99S/DG/B3,115 application, or BAV99S/DG/B3,115 equivalent, key selection criteria include verified dual-series diode topology, AEC-Q101 qualification for automotive use, low-leakage performance at 80 V (IR ≤0.5 μA), and thermal resistance Rth(j-sp) = 260 K/W under standard FR4 mounting.
Technical Context
The BAV99S integrates four discrete high-speed diodes in a single SOT363 package with pin configuration supporting two independent series diode paths: D1–D2 and D3–D4. Each diode exhibits VF = 855 mV at IF = 10 mA and IR ≤30 nA at VR = 25 V, ensuring low forward loss and minimal standby leakage.
Its AEC-Q101 qualification confirms robustness for automotive environments, with Tj max = 150 °C, Tamb range of −65 °C to +150 °C, and Ptot = 250 mW at Tsp ≤85 °C - validated under JEDEC-standard thermal test conditions on FR4 PCB with tin-plated copper.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Recovery Time (trr) | ≤4 ns - enables >100 MHz switching in signal clamping and data line protection circuits |
| Diode Capacitance (Cd) | ≤1.5 pF at 1 MHz/0 V - minimizes signal distortion in RF and high-speed digital I/O paths |
| Peak Reverse Voltage (VRRM) | 100 V - supports 24 V and 48 V automotive bus protection without derating |
| Forward Voltage (VF) | 855 mV at IF = 10 mA - ensures low power loss in series polarity protection and level-shifting networks |
| Reverse Leakage (IR) | ≤0.5 μA at VR = 80 V - maintains signal integrity in high-impedance sensing and bias networks |
| Thermal Resistance (Rth(j-sp)) | 260 K/W - allows sustained operation up to 125 mA per diode path on standard FR4 with solder-point cooling |
Pinout & Package
SOT363 (SC-88) plastic surface-mounted package with 6 leads; 2.2 mm × 1.35 mm footprint; 0.65 mm pitch; 0.45 mm max height; designed for reflow and wave soldering per JEDEC J-STD-020 and J-STD-006.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Anode (Diode 1) | Input node for first series diode path; connects to upstream signal or supply rail |
| 2 | Cathode (Diode 2) | Output node of first series path; forms low-impedance clamp to reference when forward-biased |
| 3 | Cathode (Diode 3) / Anode (Diode 4) | Shared terminal between second series pair; enables bidirectional clamping or dual-rail protection |
| 4 | Anode (Diode 3) | Input node for second series diode path; isolated from Pin 1 for independent channel routing |
| 5 | Cathode (Diode 4) | Output node of second series path; supports differential or complementary signal conditioning |
| 6 | Cathode (Diode 1) / Anode (Diode 2) | Shared terminal for first series pair; provides common return for dual-path configuration |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD (HBM ≥8 kV) |
| Quadruple diode array | Two independent series-connected diode pairs in one SOT363 footprint - reduces board area by 60% vs discrete solutions |
| Low trr + low Cd synergy | Simultaneous 4 ns recovery and 1.5 pF capacitance enables clean edge preservation in USB 2.0 and CAN FD data lines |
| High VR with low IR | 100 V blocking capability maintained with ≤0.5 μA leakage at 80 V - critical for battery-backed sensor interfaces |
Applications
| Automotive CAN Transceiver Protection | USB 2.0 Data Line Clamping |
|---|---|
Use Scenario: Bidirectional ESD and overvoltage protection on CAN_H/CAN_L lines in body control modules. IC Role / Device Role / Timing Role: Series-connected diode pair (Pins 1–6–2 and Pins 4–3–5) acts as low-capacitance, fast-recovery clamp to VCC and GND rails. Use Value: 1.5 pF capacitance prevents signal rise-time degradation; 4 ns trr avoids pulse distortion during transient events per ISO 16750-2. |
Use Scenario: I/O line protection for USB 2.0 host/device ports in infotainment head units. IC Role / Device Role / Timing Role: Dual-series configuration isolates D+ and D− lines while providing symmetric ±15 kV HBM ESD suppression. Use Value: 0.5 μA IR at 80 V eliminates DC loading on 3.3 V PHY bias networks; SOT363 footprint fits tight 0.5 mm pitch routing. |
| Industrial Sensor Signal Conditioning | DC-DC Converter Feedback Path Protection |
Use Scenario: Polarity reversal and transient suppression on analog output lines (e.g., 4–20 mA transmitters). IC Role / Device Role / Timing Role: Diode pair (Pins 1–6–2) blocks reverse current; second pair (Pins 4–3–5) clamps induced surges to supply rails. Use Value: 100 V VRRM accommodates 48 V industrial bus transients; −65 °C to +150 °C operating range matches sensor environmental specs. |
Use Scenario: Preventing feedback loop corruption during startup/shutdown in isolated flyback converters. IC Role / Device Role / Timing Role: Series diodes (Pins 1–6–2) isolate optocoupler input from secondary-side voltage spikes during MOSFET switching transitions. Use Value: 855 mV VF at 10 mA ensures minimal offset error in precision TL431-based feedback; 250 mW Ptot sustains continuous conduction. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed quadruple diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BAV99S,115 (Nexperia) | Same die, identical SOT363 package, identical marking "K1*" - direct form-fit-function match | No functional difference; same AEC-Q101 qualification and thermal specs | Select when full traceability to original Nexperia wafer lot and packaging line is required |
| MMBD352LT1G (onsemi) | trr = 4 ns (same), but Cd = 2.0 pF (higher); IR = 0.1 μA @ 25 V (lower), but VR = 80 V (lower) | Not rated for 100 V systems; unsuitable for 48 V automotive bus protection | Choose only for cost-sensitive non-automotive designs where 80 V rating suffices and 0.5 pF extra capacitance is acceptable |
Compared with BAV99S/DG/B3,115, the BAV99S,115 offers identical performance with full manufacturing traceability, while MMBD352LT1G trades 20 V VR headroom and +0.5 pF capacitance for marginally lower leakage - making it viable only in non-automotive 24 V systems.
Availability
BAV99S/DG/B3,115 is available at Aetrix Electronics and suitable for automotive CAN interface protection, USB 2.0 clamping, and industrial 4–20 mA transmitter designs requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for BAV99S/DG/B3,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability essential semiconductors - delivering discrete, logic, and MOSFET solutions optimized for efficiency, size, and robustness.
The BAV99 series belongs to Nexperia's high-speed switching diode product line, engineered specifically for automotive signal integrity, industrial transient suppression, and space-constrained consumer interface protection - with AEC-Q101 qualification as a foundational design requirement.
FAQ
What is the maximum continuous forward current per diode in the BAV99S/DG/B3,115?
The maximum continuous forward current per diode is 200 mA at Tamb ≤25 °C, as specified in Table 6 of the Nexperia datasheet Rev. 8. This rating assumes single-diode loading on an FR4 PCB with standard footprint and tin-plated copper; derating applies above 25 °C ambient.
Is the BAV99S/DG/B3,115 suitable for bidirectional ESD protection on differential data lines?
Yes - its quadruple configuration with two independent series diode pairs (Pins 1–6–2 and Pins 4–3–5) supports symmetrical clamping to both VCC and GND. Combined with 1.5 pF capacitance and 4 ns trr, it meets IEC 61000-4-2 Level 4 (±15 kV contact) requirements for USB 2.0 and CAN FD interfaces.
How does the thermal resistance Rth(j-sp) = 260 K/W impact layout design?
This value reflects junction-to-solder-point resistance under JEDEC-standard FR4 mounting. To maintain safe operation at 200 mA, designers must ensure adequate copper pour on pins 2, 3, 5, and 6 per Figure 12 footprint, avoid thermal isolation, and limit local ambient rise to ≤85 °C to stay within the 250 mW total power dissipation limit.
Does the "DG/B3" suffix indicate a specific revision or process variant?
Per Nexperia's ordering documentation, "DG" denotes tape-and-reel packaging per standard 4 mm pitch, 8 mm reel (T1), and "B3" identifies the manufacturing site code. The full part number BAV99S/DG/B3,115 corresponds to 10000-unit reel quantity (Table 9), with no functional or parametric deviation from base BAV99S,115.
BAV99S/DG/B3,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- BAV99
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Diode Configuration:
- 2 Pair Series Connection
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 100 V
- Current - Average Rectified (Io) (per Diode):
- 200mA (DC)
- Voltage - Forward (Vf) (Max) @ If:
- 1.25 V @ 150 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- 4 ns
- Current - Reverse Leakage @ Vr:
- 500 nA @ 80 V
- Operating Temperature - Junction:
- 150°C (Max)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-TSSOP
BAV99S/DG/B3,115 FAQ
1.How can I place an order for BAV99S/DG/B3,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for BAV99S/DG/B3,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAV99S/DG/B3,115 reliable?
The price and inventory of BAV99S/DG/B3,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAV99S/DG/B3,115 is usually 5 days.
3.What payment methods are accepted for BAV99S/DG/B3,115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAV99S/DG/B3,115 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAV99S/DG/B3,115?
BAV99S/DG/B3,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAV99S/DG/B3,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAV99S/DG/B3,115?
For technical support, including BAV99S/DG/B3,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAV99S/DG/B3,115 requirements.
6.How does Aetrix verify that BAV99S/DG/B3,115 is sourced from the original manufacturer or authorized distributors?
All BAV99S/DG/B3,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAV99S/DG/B3,115 meets industry standards.
7.What is the process for return or replacement of BAV99S/DG/B3,115?
All BAV99S/DG/B3,115 units undergo pre-shipment inspection (PSI). If there is an issue with BAV99S/DG/B3,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAV99S/DG/B3,115 part is unused and in its original packaging.
Return procedure for BAV99S/DG/B3,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BAV99S/DG/B3,115 Tags
-
BAV99-7-F
Diodes Incorporated
-
BAT54C-7-F
Diodes Incorporated
-
BAV99,215
Nexperia USA Inc.
-
BAT54SLT1G
onsemi
-
BAV70LT1G
onsemi
-
BAT54CLT1G
onsemi
-
BAT54S-7-F
Diodes Incorporated
-
BAV99LT1G
onsemi
-
BAT54S,215
Nexperia USA Inc.
-
BAS40-04LT1G
onsemi
-
MMBD1503-TP
Micro Commercial Co
-
BAV99WT1G
onsemi
Tech Hub
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
