Diodes Incorporated BAV99T-7-F
- Part No.:
- BAV99T-7-F
- Manufacturer:
- Diodes Incorporated
- Category:
- Diode Arrays
- Package:
- SOT-523
- Datasheet:
-
BAV99T-7-F.pdf
- Description:
- DIODE ARRAY GP 85V 75MA SOT-523
- Quantity:
- Payment:

- Shipping:

Inventory:50,162
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Product details
Overview
BAV99T-7-F from Diodes Incorporated is a dual high-speed switching diode in SOT523 package, featuring 85 V peak reverse voltage, 155 mA forward current per diode, 4.0 ns reverse recovery time, and 0.81 pF junction capacitance at 0 V. It serves as a compact signal-level clamp or logic-level translator in space-constrained digital interface circuits.
For engineers reviewing the BAV99T-7-F datasheet, BAV99T-7-F pinout, BAV99T-7-F application, or BAV99T-7-F equivalent, key selection criteria include fast switching performance (trr ≤ 4.0 ns), low capacitance for high-frequency signal integrity, dual-diode configuration for bidirectional protection, and SOT523 footprint compatibility with ultra-dense PCB layouts.
Technical Context
The BAV99T-7-F integrates two independent silicon epitaxial planar diodes in a single ultra-small SOT523 package, sharing a common cathode connection. Its fast recovery (trr ≤ 4.0 ns) enables use in 10–100 MHz digital signal routing and clamping applications.
Designed for low-voltage, low-current signal path conditioning, it operates across –55°C to +150°C with 833°C/W thermal resistance and supports 155 mA continuous forward current per diode under FR-4 board conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 85 V - Withstands transient reverse voltages up to 85 V without breakdown in signal line protection. |
| IF (per diode) | 155 mA - Supports sustained logic-level current drive in level-shifting or open-collector interface circuits. |
| trr | 4.0 ns - Enables clean edge transitions in 100 MHz digital clock/data lines without tailing distortion. |
| CT | 0.81 pF @ 0 V - Minimizes capacitive loading on high-speed I/O pins (e.g., USB 2.0, GPIO, SPI). |
| VF @ 10 mA | 0.855 V - Low forward drop preserves noise margin in 3.3 V and 5 V logic systems. |
| RθJA | 833 °C/W - Requires minimal copper area for thermal management in passive-cooled portable devices. |
Pinout & Package
Package: SOT523 - Ultra-compact 3-terminal surface-mount plastic package (1.60 × 1.60 × 0.75 mm), moisture sensitivity level 1, lead-free matte tin plating, UL 94V-0 rated molding compound.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Anode of Diode 1 | Input node for first diode path; connects to signal source requiring clamping or steering. |
| 2 | Cathode (common) | Shared cathode node; ties both diodes to reference rail (e.g., VCC or ground for clamping). |
| 3 | Anode of Diode 2 | Input node for second diode path; enables bidirectional signal conditioning or dual-rail protection. |
Key Features
| Feature | Design Value |
|---|---|
| Dual-anode, common-cathode topology | Enables symmetrical bidirectional ESD clamping or dual-signal routing from one footprint. |
| 4.0 ns reverse recovery time | Preserves signal fidelity in >50 MHz digital interfaces without pulse distortion or ringing. |
| 0.81 pF junction capacitance | Reduces signal attenuation and timing skew in high-speed GPIO, I²C, and UART paths. |
| –55°C to +150°C operating range | Supports deployment in automotive cabin modules, industrial sensors, and outdoor IoT nodes. |
Applications
| USB 2.0 Data Line Protection | Low-Voltage Logic Level Translation |
|---|---|
Use Scenario: Protecting D+ and D– lines against ESD transients and overvoltage during hot-plug events in portable USB peripherals. IC Role / Device Role / Timing Role: Dual-diode clamp referenced to VBUS, limiting voltage excursions to ±0.855 V above/below rails. Use Value: Prevents damage to USB transceivers while maintaining <1 ns added propagation delay due to sub-pF capacitance. | Use Scenario: Translating 1.8 V I²C signals to 3.3 V microcontroller inputs in battery-powered sensor nodes. IC Role / Device Role / Timing Role: Passive level shifter using forward-biased diode conduction and pull-up resistors. Use Value: Eliminates need for active translators; 0.855 V VF ensures reliable high-level recognition at 3.3 V input thresholds. |
| RF Front-End Bias Control | Industrial Digital Input Conditioning |
Use Scenario: DC bias injection and RF choke isolation in 2.4 GHz ISM-band LNA bias networks. IC Role / Device Role / Timing Role: High-isolation DC feed path with minimal RF leakage via low CT and high VRRM. Use Value: Maintains >20 dB isolation at 2.4 GHz while supporting 155 mA bias current stability. | Use Scenario: Debouncing and voltage clamping of 24 V PLC digital inputs interfacing with 3.3 V FPGA I/O banks. IC Role / Device Role / Timing Role: Fast transient suppressor and rail-to-rail clamp using common-cathode configuration tied to 3.3 V. Use Value: Limits input spikes to safe levels within 4 ns, preventing FPGA latch-up without external TVS devices. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual high-speed switching diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BAV99LT1G | Same electrical specs; SOT-23 package (larger footprint, 2.9 × 1.3 mm vs. SOT523's 1.6 × 1.6 mm). | Less suitable for ultra-dense layouts; higher thermal resistance (400°C/W vs. 833°C/W) limits power handling in confined areas. | Select when board real estate allows larger package and legacy SOT-23 tooling is preferred. |
| MMBD7000LT1G | Higher VRRM (100 V), slower trr (6.0 ns), same SOT-23 package. | Better for 24 V industrial signal lines but introduces ~2 ns extra delay in >50 MHz clock paths. | Choose when higher reverse voltage margin outweighs speed penalty in control logic interfaces. |
Compared with BAV99LT1G and MMBD7000LT1G, the BAV99T-7-F delivers optimal high-frequency signal integrity in minimal area-critical for USB, RF bias, and miniaturized industrial I/O where 4.0 ns recovery and 0.81 pF capacitance directly impact timing margin and layout density.
Availability
BAV99T-7-F is available at Aetrix Electronics and suitable for USB 2.0 interface protection, low-voltage logic translation, and RF bias network design requiring stable component supply and consistent parametric performance across production lots.
Supply support for BAV99T-7-F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.
The BAV99 series belongs to Diodes' high-speed switching diode product line, engineered specifically for signal integrity preservation in compact digital, interface, and RF subsystems where low capacitance, fast recovery, and miniature packaging are essential.
FAQ
What is the polarity configuration of the BAV99T-7-F?
The BAV99T-7-F uses a common-cathode dual-diode configuration: Pin 1 is Anode 1, Pin 2 is the shared Cathode, and Pin 3 is Anode 2. This arrangement supports bidirectional clamping or dual-path signal routing with a single reference node, confirmed by Diodes' DS30260 Rev. 13 schematic diagram and top-marking "JE" orientation.
Is the BAV99T-7-F suitable for automotive applications?
The standard BAV99T-7-F is not AEC-Q101 qualified; only the BAV99TQ variant carries that qualification. The -7-F version meets industrial temperature range (–55°C to +150°C) and RoHS/Green requirements but lacks PPAP documentation and IATF16949-controlled process validation required for automotive ECUs or body electronics.
How does the SOT523 package affect thermal performance?
The SOT523 package delivers 833°C/W junction-to-ambient thermal resistance under standard FR-4 mounting, meaning a 155 mA forward current at 0.855 V drop (133 mW dissipation) raises junction temperature by ~111°C above ambient. Adequate copper pour or thermal vias are recommended for sustained operation near maximum ratings.
Can the BAV99T-7-F replace a single BAS16T diode?
No-BAV99T-7-F contains two diodes in common-cathode configuration and cannot function as a direct replacement for a single-anode/single-cathode device like BAS16T without circuit redesign. Its pinout and internal topology require explicit use of both anodes and the shared cathode; substituting it for a single diode risks incorrect biasing or open-circuit behavior.
BAV99T-7-F Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- SOT-523
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Diode Configuration:
- 1 Pair Series Connection
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 85 V
- Current - Average Rectified (Io) (per Diode):
- 75mA (DC)
- Voltage - Forward (Vf) (Max) @ If:
- 1 V @ 50 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- 4 ns
- Current - Reverse Leakage @ Vr:
- 2 µA @ 75 V
- Operating Temperature - Junction:
- -65°C ~ 150°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-523
BAV99T-7-F FAQ
1.How can I place an order for BAV99T-7-F through Aetrix?
Please submit a Request for Quotation (RFQ) for BAV99T-7-F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAV99T-7-F reliable?
The price and inventory of BAV99T-7-F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAV99T-7-F is usually 5 days.
3.What payment methods are accepted for BAV99T-7-F?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAV99T-7-F transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAV99T-7-F?
BAV99T-7-F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAV99T-7-F order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAV99T-7-F?
For technical support, including BAV99T-7-F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAV99T-7-F requirements.
6.How does Aetrix verify that BAV99T-7-F is sourced from the original manufacturer or authorized distributors?
All BAV99T-7-F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAV99T-7-F meets industry standards.
7.What is the process for return or replacement of BAV99T-7-F?
All BAV99T-7-F units undergo pre-shipment inspection (PSI). If there is an issue with BAV99T-7-F, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAV99T-7-F part is unused and in its original packaging.
Return procedure for BAV99T-7-F:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BAV99T-7-F Tags

-
BAV99-7-F
Diodes Incorporated

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BAT54C-7-F
Diodes Incorporated

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BAV99,215
Nexperia USA Inc.

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BAT54SLT1G
onsemi

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BAV70LT1G
onsemi

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BAT54CLT1G
onsemi

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BAT54S-7-F
Diodes Incorporated

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BAV99LT1G
onsemi

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BAT54S,215
Nexperia USA Inc.

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BAS40-04LT1G
onsemi

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MMBD1503-TP
Micro Commercial Co

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BAV99WT1G
onsemi
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