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Nexperia USA Inc. BAV99W,115
- Part No.:
- BAV99W,115
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Diode Arrays
- Package:
- SC-70, SOT-323
- Datasheet:
-
BAV99W,115.pdf
- Description:
- DIODE ARRAY GP 100V 150MA SOT323
- Quantity:
- Payment:
- Shipping:
Inventory:803,869
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Product details
Overview
BAV99W from Nexperia is a dual high-speed switching diode in SOT323 (SC-70) package, configured as two independent diodes sharing a common terminal (anode of D1 and cathode of D2 tied together at Pin 3). It delivers trr ≤ 4 ns reverse recovery time, Cd ≤ 1.5 pF capacitance, and VR = 100 V, enabling use in compact DC-DC converter snubbers and USB data line protection circuits.
For engineers reviewing the BAV99W datasheet, BAV99W pinout, BAV99W application, or BAV99W equivalent, this page provides verified pin functions, thermal resistance (Rth(j-a) = 625 K/W), forward voltage (VF = 855 mV @ 10 mA), leakage current (IR = 0.5 µA @ 80 V), and validated alternatives for dual-diode high-speed switching roles.
Technical Context
The BAV99W integrates two discrete silicon planar epitaxial diodes in a single SC-70 package with shared terminal architecture (Pin 3 = K1/A2), supporting series or parallel dual-diode configurations without external interconnects. Its low trr and Cd stem from optimized doping profiles and junction geometry, not process scaling alone.
This device operates under IEC 60134 absolute maximum ratings: VR = 100 V, IF = 150 mA per diode, Ptot = 200 mW at Tamb ≤ 25 °C, and Tj up to 150 °C - all specified with FR4 PCB mounting conditions defined in the thermal test setup.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Voltage (VR) | 100 V - supports input rail clamping in 48 V industrial power supplies without breakdown. |
| Reverse Recovery Time (trr) | 4 ns - enables >100 MHz switching in flyback snubber networks with minimal switching loss. |
| Diode Capacitance (Cd) | 1.5 pF @ 0 V - preserves signal integrity in USB 2.0 (480 Mbps) ESD protection paths. |
| Forward Voltage (VF) | 855 mV @ 10 mA - ensures low conduction loss in low-current bias and logic-level clamping. |
| Reverse Leakage (IR) | 0.5 µA @ 80 V, 25 °C - maintains high impedance in standby-mode polarity protection circuits. |
| Junction-to-Ambient Rth | 625 K/W - defines thermal derating to ~120 mW at Tamb = 70 °C on standard FR4 PCB. |
Pinout & Package
SOT323 (SC-70) plastic surface-mount package: 3-terminal, 1.3 mm pitch, 2.0 mm × 1.25 mm × 0.95 mm body, designed for reflow soldering with defined footprint per Figure 8.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Anode of Diode 1 (A1) | Input node for first diode's forward conduction path; connects to positive-side signal or supply rail. |
| 2 | Cathode of Diode 2 (K2) | Output node for second diode's forward conduction; used for clamping or steering to ground or reference. |
| 3 | Cathode of Diode 1 / Anode of Diode 2 (K1, A2) | Shared internal node enabling series-connected dual-diode topology (e.g., bidirectional clamp or level shifter). |
Key Features
| Feature | Design Value |
|---|---|
| Dual-diode integration | Two independent switching diodes in one SC-70 footprint - reduces board area by 40% vs. discrete SOT23 pair. |
| Ultra-fast recovery | trr ≤ 4 ns measured under IF = IR = 10 mA, RL = 100 Ω - eliminates tail current in high-frequency PWM control loops. |
| Low-junction capacitance | Cd ≤ 1.5 pF at 0 V - minimizes capacitive loading on high-speed digital lines (e.g., I²C, UART). |
| Thermally robust packaging | Rth(j-sp) = 300 K/W - enables localized heat extraction via solder joint to copper pour, critical for sustained 130 mA dual-diode operation. |
Applications
| USB 2.0 Data Line Protection | DC-DC Converter Snubber |
|---|---|
Use Scenario: Bidirectional ESD clamping on D+ and D− lines of embedded USB peripherals. IC Role / Device Role / Timing Role: Dual-diode transient voltage suppressor with shared cathode/anode configuration providing symmetrical ±15 kV HBM protection. Use Value: 1.5 pF capacitance avoids signal rise-time degradation beyond USB 2.0 specification (≤ 2 ns). |
Use Scenario: RC snubber network across MOSFET drain-source in 500 kHz buck converter. IC Role / Device Role / Timing Role: Fast-recovery clamp diode absorbing turn-off voltage spikes during high dV/dt switching events. Use Value: 4 ns trr ensures full recovery before next switching cycle, preventing cumulative energy buildup. |
| Reverse Polarity Input Protection | Logic-Level Signal Steering |
Use Scenario: Series-connected protection for 12 V automotive accessory modules powered from vehicle battery. IC Role / Device Role / Timing Role: Low-VF anode-cathode path blocking reverse current while conducting forward current with <855 mV drop. Use Value: 0.5 µA leakage at 80 V prevents battery drain during long-term vehicle storage. |
Use Scenario: Level translation between 3.3 V microcontroller GPIO and 5 V sensor interface. IC Role / Device Role / Timing Role: Dual-diode arrangement (D1 anode → GPIO, D2 cathode → 5 V rail) limiting voltage excursion to VF + 5 V. Use Value: Shared Pin 3 enables compact routing without external jumper, reducing trace inductance in 10 MHz+ digital paths. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual high-speed switching diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BAV99LT1G | Same electrical specs (trr ≤ 4 ns, VR = 100 V), but SOT-23 package (larger footprint, 2.9 mm × 1.3 mm vs. 2.0 mm × 1.25 mm). | Less suitable for ultra-dense layouts; higher Rth(j-a) = 400 K/W requires larger copper area for same thermal performance. | Select when existing SOT-23 land pattern exists and board space allows 45% larger footprint. |
| MMBD7000LT1G | Higher VF = 1.25 V @ 100 mA, trr = 4 ns, but Cd = 2.0 pF - 33% higher capacitance than BAV99W. | Not recommended for >100 Mbps data lines due to increased signal distortion; acceptable for lower-speed analog clamping. | Choose only if legacy design uses MMBD7000 footprint and 0.5 V higher forward drop is tolerable. |
Compared with BAV99LT1G and MMBD7000LT1G, the BAV99W offers the smallest board footprint (SOT323), lowest thermal resistance to solder point (300 K/W), and lowest capacitance (1.5 pF), making it optimal for space-constrained, high-frequency, and low-capacitance signal-path applications.
Availability
BAV99W is available at Aetrix Electronics and suitable for USB interface protection, DC-DC snubber networks, and reverse polarity input protection requiring stable component supply and consistent parametric performance across production lots.
Supply support for BAV99W includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on essential system functionality, delivering high-performance, reliable discrete, logic, and MOSFET solutions for automotive, industrial, and consumer markets.
The BAV99W belongs to Nexperia's high-speed switching diode product line, engineered specifically for compact, high-frequency signal integrity and power management applications where fast recovery, low capacitance, and small form factor are mandatory.
FAQ
What is the maximum continuous forward current per diode in the BAV99W?
The BAV99W supports 150 mA continuous forward current per diode at Tamb ≤ 25 °C, as specified in Table 5 (Limiting values). At elevated ambient temperatures, derating applies: at 70 °C, maximum IF drops to approximately 105 mA due to thermal resistance (Rth(j-a) = 625 K/W) and 200 mW total power dissipation limit.
Can the BAV99W be used in bidirectional TVS applications?
No - the BAV99W is not rated or characterized as a TVS device. Its 100 V VR rating is a DC blocking voltage, not a breakdown or clamping voltage. It lacks the controlled avalanche behavior, peak pulse power rating, and standardized ESD/IEC 61000-4-2 performance required for TVS operation. Use dedicated TVS diodes like PESD5V0S1BA for such roles.
How does the shared Pin 3 (K1/A2) affect circuit layout?
Pin 3 serves as both cathode of Diode 1 and anode of Diode 2, enabling compact series-diode configurations (e.g., back-to-back clamping) without external traces. Layout must avoid routing conflicting nets to this pin; it cannot simultaneously serve as a sink and source node in active drive circuits. The internal connection is fixed and non-configurable.
Is the BAV99W qualified for automotive applications?
No - the July 2022 datasheet explicitly states "Product(s) changed to non-automotive qualification" and directs users to Nexperia's automotive-qualified alternatives (e.g., BAV99W-Q series) for AEC-Q101-compliant designs. The BAV99W lacks automotive-grade screening, qualification testing, and guaranteed PPAP documentation.
BAV99W,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- BAV99
- Package/Case:
- SC-70, SOT-323
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Diode Configuration:
- 1 Pair Series Connection
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 100 V
- Current - Average Rectified (Io) (per Diode):
- 150mA (DC)
- Voltage - Forward (Vf) (Max) @ If:
- 1.25 V @ 150 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- 4 ns
- Current - Reverse Leakage @ Vr:
- 500 nA @ 80 V
- Operating Temperature - Junction:
- 150°C (Max)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-323
BAV99W,115 FAQ
1.How can I place an order for BAV99W,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for BAV99W,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAV99W,115 reliable?
The price and inventory of BAV99W,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAV99W,115 is usually 5 days.
3.What payment methods are accepted for BAV99W,115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAV99W,115 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAV99W,115?
BAV99W,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAV99W,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAV99W,115?
For technical support, including BAV99W,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAV99W,115 requirements.
6.How does Aetrix verify that BAV99W,115 is sourced from the original manufacturer or authorized distributors?
All BAV99W,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAV99W,115 meets industry standards.
7.What is the process for return or replacement of BAV99W,115?
All BAV99W,115 units undergo pre-shipment inspection (PSI). If there is an issue with BAV99W,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAV99W,115 part is unused and in its original packaging.
Return procedure for BAV99W,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BAV99W,115 Tags
-
BAV99-7-F
Diodes Incorporated
-
BAT54C-7-F
Diodes Incorporated
-
BAV99,215
Nexperia USA Inc.
-
BAT54SLT1G
onsemi
-
BAV70LT1G
onsemi
-
BAT54CLT1G
onsemi
-
BAT54S-7-F
Diodes Incorporated
-
BAV99LT1G
onsemi
-
BAT54S,215
Nexperia USA Inc.
-
BAS40-04LT1G
onsemi
-
MMBD1503-TP
Micro Commercial Co
-
BAV99WT1G
onsemi
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