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Nexperia USA Inc. BAV99W,135
- Part No.:
- BAV99W,135
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Diode Arrays
- Package:
- SC-70, SOT-323
- Datasheet:
-
BAV99W,135.pdf
- Description:
- DIODE ARRAY GP 100V 150MA SOT323
- Quantity:
- Payment:
- Shipping:
Inventory:615,688
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Product details
Overview
BAV99W from Nexperia is a dual high-speed switching diode in SOT323 (SC-70) package, configured as two independent diodes sharing a common terminal (anode of D1 and cathode of D2 tied together at pin 3). It delivers trr ≤ 4 ns reverse recovery time, Cd ≤ 1.5 pF capacitance, and VR = 100 V, enabling use in compact DC-DC converter flyback snubbers and USB port polarity protection circuits.
For engineers reviewing the BAV99W datasheet, BAV99W pinout, BAV99W application, or BAV99W equivalent, key selection criteria include verified dual-diode topology, sub-4 ns trr under IF = 10 mA / IR = 10 mA test conditions, thermal resistance Rth(j-a) = 625 K/W on FR4 PCB, and compatibility with reflow soldering per IPC-J-STD-020.
Technical Context
The BAV99W integrates two discrete silicon epitaxial planar diodes in a single SC-70 package with shared terminal architecture (pin 3 = K1/A2), supporting series or anti-parallel configurations without external interconnects. Its epitaxial construction enables fast carrier recombination for trr ≤ 4 ns.
Operation is defined by absolute maximum ratings including VR = 100 V, IF = 150 mA per diode, and Ptot = 200 mW at Tamb ≤ 25 °C, with thermal performance governed by Rth(j-a) = 625 K/W (free air) and Rth(j-sp) = 300 K/W (solder point).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse voltage (VR) | 100 V - supports input rail protection up to 80 V DC with 20 % margin |
| Reverse recovery time (trr) | 4 ns - enables >100 MHz switching in clamp/snubber networks |
| Diode capacitance (Cd) | 1.5 pF - minimizes signal loading in RF detector and high-frequency logic clamping |
| Forward voltage (VF) | 855 mV @ 10 mA - ensures low conduction loss in low-current bias and level-shifting paths |
| Reverse current (IR) | 0.5 µA @ VR = 80 V - maintains leakage below 1 µA in battery-backed backup circuits |
| Thermal resistance (Rth(j-a)) | 625 K/W - defines power derating to 120 mW at Tamb = 70 °C on standard FR4 |
Pinout & Package
Package: SOT323 (SC-70), 3-lead surface-mount plastic package, 2.0 mm × 1.25 mm × 0.95 mm body, 1.3 mm lead pitch, FR4-compatible footprint per Fig. 8 (reflow).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Anode of Diode 1 (A1) | Input node for first diode path; connects to positive-side signal or supply rail |
| 2 | Cathode of Diode 2 (K2) | Output node for second diode path; routes to ground or return path |
| 3 | Cathode of Diode 1 / Anode of Diode 2 (K1, A2) | Shared internal node enabling series or back-to-back configuration without external trace |
Key Features
| Feature | Design Value |
|---|---|
| Dual-diode integration | Two independent silicon epitaxial diodes in one SC-70 package reduces board area by 40 % vs. discrete SOD-323 pair |
| Ultra-fast switching | trr ≤ 4 ns measured under standardized IF = 10 mA / IR = 10 mA / RL = 100 Ω conditions |
| Low junction capacitance | Cd ≤ 1.5 pF at VR = 0 V / f = 1 MHz ensures minimal signal distortion in 100+ MHz data lines |
| Low leakage performance | IR ≤ 0.5 µA at VR = 80 V / Tamb = 25 °C supports long-term battery isolation in always-on systems |
| Thermally optimized layout | Rth(j-sp) = 300 K/W enables 160 mW dissipation before Tj exceeds 125 °C on standard FR4 |
Applications
| USB Port Polarity Protection | DC-DC Converter Snubber |
|---|---|
Use Scenario: Preventing damage from reversed VBUS insertion in Type-A and micro-USB receptacles. IC Role / Device Role: Dual-diode configured as back-to-back (anti-series) to block reverse current while passing forward current. Use Value: Eliminates need for external MOSFET control circuitry; operates within ±5.5 V tolerance of USB 2.0 spec. | Use Scenario: Suppressing voltage spikes across synchronous rectifier MOSFETs in buck-boost converters. IC Role / Device Role: Fast-recovery clamp diode absorbing inductive kickback energy during switch transitions. Use Value: 4 ns trr limits ring duration to <10 ns, reducing EMI emissions by 8 dBµV in 30–100 MHz band. |
| RF Signal Detector | Logic-Level Clamping |
Use Scenario: Demodulating AM signals in 2.4 GHz ISM-band receiver front-ends. IC Role / Device Role: Low-Cd envelope detector diode operating at RF frequencies with minimal parasitic loading. Use Value: 1.5 pF capacitance preserves Q-factor of matching network; VF = 715 mV @ 1 mA enables sub-100 µW detection threshold. | Use Scenario: Protecting 3.3 V GPIO pins from 5 V-tolerant I²C bus transients. IC Role / Device Role: Bidirectional ESD clamp using dual-diode structure referenced to VCC and GND rails. Use Value: Shared pin 3 allows direct connection between VCC and GND rails without extra traces; IR < 1 µA avoids pull-up current drain. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed dual-diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BAV99LT1G | Same electrical specs; SOT-23 package (3.0 mm × 1.4 mm), larger footprint, higher Rth(j-a) = 400 K/W | Less suitable for ultra-dense layouts; better thermal margin at high ambient temperatures | Select when board space permits and thermal management prioritizes over miniaturization |
| MMBD7000LT1G | trr = 6 ns (vs. 4 ns); Cd = 2.0 pF (vs. 1.5 pF); VF = 1.25 V @ 150 mA (higher conduction loss) | Acceptable for ≤50 MHz switching; not recommended for RF detector or high-speed snubber roles | Select only if cost sensitivity outweighs trr/Cd requirements and layout allows SOT-23 |
Compared with BAV99LT1G and MMBD7000LT1G, the BAV99W provides the smallest package (SOT323), fastest trr (4 ns), lowest Cd (1.5 pF), and optimal balance of leakage (0.5 µA) and thermal resistance (625 K/W) for space-constrained, high-frequency signal-path applications.
Availability
BAV99W is available at Aetrix Electronics and suitable for USB interface protection, DC-DC snubber networks, RF detector circuits, and logic-level clamping requiring stable component supply and consistent parametric performance across production lots.
Supply support for BAV99W includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on essential efficiency technologies, delivering high-performance, reliable discrete, logic, and MOSFET solutions for automotive, industrial, and consumer markets.
The BAV99W belongs to Nexperia's high-speed switching diode product line, engineered specifically for miniaturized power management and signal integrity applications where speed, capacitance, and leakage must be simultaneously optimized.
FAQ
What is the maximum continuous forward current rating per diode in the BAV99W?
The BAV99W supports a maximum continuous forward current of 150 mA per diode at Tamb ≤ 25 °C, derating linearly to zero at 150 °C junction temperature. This rating assumes single-diode operation with Ptot = 200 mW and Rth(j-a) = 625 K/W on standard FR4 PCB.
Can the BAV99W be used in bidirectional ESD protection configurations?
Yes - its dual-diode structure with shared pin 3 (K1/A2) allows direct implementation as a bidirectional rail-to-rail clamp between VCC and GND. The 1.5 pF capacitance and 0.5 µA leakage at 80 V ensure minimal impact on signal integrity and standby power in I/O protection circuits.
Is the BAV99W qualified for automotive applications?
No - the BAV99W is explicitly designated as non-automotive qualified per Nexperia's 2022 revision history. It lacks AEC-Q101 qualification and is not tested to automotive temperature, reliability, or stress standards. Automotive alternatives require the -Q suffix (e.g., BAV99W-Q).
What is the recommended reflow profile for the SOT323 package of the BAV99W?
The BAV99W's SOT323 package complies with IPC-J-STD-020 moisture sensitivity level 1 and supports standard lead-free reflow profiles. Peak temperature must not exceed 260 °C for ≤30 seconds, with ramp-up rate ≤3 °C/s and ramp-down rate ≤6 °C/s, per Nexperia's SOT323 footprint guidelines (Fig. 8).
BAV99W,135 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- BAV99
- Package/Case:
- SC-70, SOT-323
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Diode Configuration:
- 1 Pair Series Connection
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 100 V
- Current - Average Rectified (Io) (per Diode):
- 150mA (DC)
- Voltage - Forward (Vf) (Max) @ If:
- 1.25 V @ 150 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- 4 ns
- Current - Reverse Leakage @ Vr:
- 500 nA @ 80 V
- Operating Temperature - Junction:
- 150°C (Max)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-323
BAV99W,135 FAQ
1.How can I place an order for BAV99W,135 through Aetrix?
Please submit a Request for Quotation (RFQ) for BAV99W,135 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAV99W,135 reliable?
The price and inventory of BAV99W,135 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAV99W,135 is usually 5 days.
3.What payment methods are accepted for BAV99W,135?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAV99W,135 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAV99W,135?
BAV99W,135 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAV99W,135 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAV99W,135?
For technical support, including BAV99W,135 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAV99W,135 requirements.
6.How does Aetrix verify that BAV99W,135 is sourced from the original manufacturer or authorized distributors?
All BAV99W,135 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAV99W,135 meets industry standards.
7.What is the process for return or replacement of BAV99W,135?
All BAV99W,135 units undergo pre-shipment inspection (PSI). If there is an issue with BAV99W,135, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAV99W,135 part is unused and in its original packaging.
Return procedure for BAV99W,135:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BAV99W,135 Tags
-
BAV99-7-F
Diodes Incorporated
-
BAT54C-7-F
Diodes Incorporated
-
BAV99,215
Nexperia USA Inc.
-
BAT54SLT1G
onsemi
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BAV70LT1G
onsemi
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BAT54CLT1G
onsemi
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BAT54S-7-F
Diodes Incorporated
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BAV99LT1G
onsemi
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BAT54S,215
Nexperia USA Inc.
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BAS40-04LT1G
onsemi
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MMBD1503-TP
Micro Commercial Co
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BAV99WT1G
onsemi
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