Diodes Incorporated BAV99W-7-F

Overview

BAV99W-7-F from Diodes Incorporated is a dual high-speed switching diode in SOT323 package, configured as two independent anode-cathode pairs sharing a common cathode (dual series-connected configuration per datasheet schematic), with 75 V peak reverse voltage, 300 mA forward current rating, and 4.0 ns reverse recovery time. It serves in signal routing, polarity protection, and clamp circuits in USB interface protection, low-voltage DC-DC converter feedback paths, and logic-level translation networks.

For engineers reviewing the BAV99W-7-F datasheet, BAV99W-7-F pinout, BAV99W-7-F application, or BAV99W-7-F equivalent, key selection criteria include reverse recovery time under 5 ns, dual-diode topology with common-cathode arrangement, SOT323 footprint compatibility, and operation at 150°C junction temperature in space-constrained industrial control modules.

Technical Context

The BAV99W-7-F integrates two silicon planar epitaxial switching diodes in a single SOT323 package with a shared cathode terminal, enabling compact dual-channel clamping or steering functions. Its fast recovery (t_RR = 4.0 ns) supports operation up to ~100 MHz in RF detector and sample-and-hold applications.

Thermal resistance of 625°C/W (R_θJA) reflects its FR-4 board mounting condition with 1"×1" 2 oz copper pads, and its -55°C to +150°C operating range allows deployment in automotive under-hood sensor interfaces and industrial PLC I/O modules without derating below 85°C ambient.

Key Specifications

Pinout & Package

SOT323 package: 3-terminal plastic molded case with matte tin-plated alloy 42 leadframe, moisture sensitivity level 1 (J-STD-020), UL 94V-0 rated compound, weight ≈ 0.006 g.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual high-speed switching diode applications.

Compared with BAV99W-7-F, BAV99LT1G requires footprint adaptation but offers identical electrical performance, while MMBD7000LT1G trades 5 V reverse voltage headroom for increased forward current capacity-making it viable only in lower-voltage designs where SOT-23 is preferred.

Availability

BAV99W-7-F is available at Aetrix Electronics and suitable for USB interface protection, industrial digital I/O conditioning, and low-voltage DC-DC feedback clamping requiring stable component supply across production lifecycles.

Supply support for BAV99W-7-F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in IATF 16949-certified facilities.

The BAV99W belongs to Diodes' general-purpose switching diode product line, engineered for high-reliability signal routing and transient suppression in space-limited industrial and computing applications.

FAQ

What is the pin configuration of BAV99W-7-F?

BAV99W-7-F uses a 3-pin SOT323 package with Pin 1 = Anode of Diode 1, Pin 2 = Common Cathode, and Pin 3 = Anode of Diode 2. This common-cathode dual-diode arrangement is confirmed in the internal schematic diagram on page 2 of DS30045 Rev. 14–2 and matches top-view marking "KJG" orientation.

Is BAV99W-7-F suitable for automotive applications?

BAV99W-7-F itself is not AEC-Q101 qualified; only the BAV99WQ-7-F variant carries that qualification. The standard BAV99W-7-F is rated for -55°C to +150°C operation and built in IATF 16949 facilities, but lacks PPAP documentation and automotive change-control processes required for vehicle subsystems.

What is the maximum reverse voltage this device can block continuously?

The BAV99W-7-F has a peak repetitive reverse voltage (V_RWM) of 75 V, verified per datasheet Table "Maximum Ratings" on page 2. This value applies under continuous DC or sinusoidal conditions up to 53 V RMS, and must be derated linearly above 25°C ambient per the power derating curve in Figure 1.

How does the 4.0 ns reverse recovery time impact circuit performance?

A 4.0 ns t_RR enables reliable operation in digital signal paths up to 100 MHz, minimizing switching loss and cross-conduction in high-frequency clamp or steering circuits. Measured at I_F = I_R = 10 mA with I_RR = 1 mA, this value ensures clean waveform edges in USB 2.0 and LVDS receiver protection networks.