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Nexperia USA Inc. BAV99W/DG/B3F
- Part No.:
- BAV99W/DG/B3F
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Diode Arrays
- Package:
- SC-70, SOT-323
- Datasheet:
-
BAV99W/DG/B3F.pdf
- Description:
- DIODE ARRAY GP 100V 150MA SOT323
- Quantity:
- Payment:
- Shipping:
Inventory:5,747
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Product details
Overview
BAV99W/DG/B3F from Nexperia is a dual high-speed switching diode in SOT323 (SC-70) package, configured as two independent series-connected diodes sharing a common terminal (anode of D1/cathode of D2 at Pin 3). It delivers trr ≤4 ns reverse recovery time, Cd ≤1.5 pF capacitance, and VR = 100 V, enabling fast signal routing and polarity protection in compact DC-DC converter feedback paths and USB port ESD clamp circuits.
For engineers reviewing the BAV99W/DG/B3F datasheet, BAV99W/DG/B3F pinout, BAV99W/DG/B3F application, or BAV99W/DG/B3F equivalent, key selection criteria include verified dual-diode series configuration, AEC-Q101 qualification for automotive use, thermal resistance Rth(j-a) = 625 K/W, and forward current rating IF = 150 mA per diode under ambient-limited conditions.
Technical Context
The BAV99W implements two discrete silicon epitaxial planar diodes in a single SOT323 package with shared terminal architecture: Pin 1 is anode of Diode 1, Pin 2 is cathode of Diode 2, and Pin 3 serves as cathode of Diode 1 and anode of Diode 2 - enabling series connection without external wiring. This topology supports bidirectional clamping and voltage-level translation.
Its 4 ns trr is measured under standardized conditions (IF = 10 mA → IR = 10 mA, RL = 100 Ω, IR = 1 mA), and low 1.5 pF capacitance at 0 V reverse bias ensures minimal signal distortion in RF-coupled or high-frequency digital lines up to 500 MHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Voltage (VR) | 100 V - supports input rail protection in 24 V industrial systems and 48 V telecom supplies without derating. |
| Reverse Recovery Time (trr) | ≤4 ns - enables clean switching in PWM frequencies above 10 MHz, critical for synchronous rectifier snubbing. |
| Diode Capacitance (Cd) | ≤1.5 pF at 0 V - preserves signal integrity in USB 2.0 data lines and high-speed logic level shifters. |
| Forward Current (IF) | 150 mA per diode - sufficient for LED indicator drive and low-power signal isolation in sensor interfaces. |
| Reverse Leakage (IR) | 0.5 μA at VR = 80 V - ensures minimal standby power loss in battery-backed backup circuits. |
| Junction Temperature (Tj) | 150 °C - allows operation in under-hood automotive ECUs and sealed industrial enclosures. |
Pinout & Package
BAV99W/DG/B3F is housed in a SOT323 (SC-70) plastic surface-mount package measuring 2.2 mm × 1.35 mm × 0.9 mm, optimized for high-density PCB layouts and reflow-compatible assembly.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Anode of Diode 1 | Input node for first diode path; connects to signal source or positive rail in clamp configurations. |
| Pin 2 | Cathode of Diode 2 | Output node for second diode path; ties to load or ground reference in series-switching topologies. |
| Pin 3 | Cathode of Diode 1 / Anode of Diode 2 | Shared internal node enabling compact series connection - eliminates external trace routing between diodes. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD (HBM ≥8 kV), supporting under-dash infotainment and ADAS sensor modules. |
| Dual-diode series configuration | Single-package integration of two diodes with shared terminal reduces board area by >40% vs. discrete SOD-323 solutions and eliminates interconnect inductance. |
| Low thermal resistance (Rth(j-sp)) | 300 K/W junction-to-solder-point - improves power handling during transient surges in 12 V automotive CAN bus protection circuits. |
| Small outline (SOT323) | 0.9 mm height and 1.35 mm width enable placement beneath QFN ICs and in 0.4 mm pitch BGA escape zones. |
Applications
| USB 2.0 Data Line Protection | Automotive CAN Bus Clamp |
|---|---|
|
Use Scenario: Bidirectional ESD suppression on D+ and D− lines of USB 2.0 ports in automotive head units and docking stations. IC Role / Device Role / Timing Role: Dual-diode clamping device providing low-capacitance (<1.5 pF) path to VBUS and GND during ±15 kV contact discharge events. Use Value: Prevents data corruption and PHY damage while maintaining signal rise/fall times <1 ns due to sub-pF parasitic loading. |
Use Scenario: Transient voltage suppression on CAN_H and CAN_L lines in body control modules exposed to load dump and ISO 7637-2 pulses. IC Role / Device Role / Timing Role: Fast-recovery (4 ns) dual diode pair used in TVS-assisted clamping networks to limit overshoot below 70 V during 100 ns spikes. Use Value: Enables compliance with ISO 16750-2 pulse 5a without adding series impedance that degrades bit timing margin. |
| DC-DC Converter Feedback Snubber | Logic-Level Translation Interface |
|
Use Scenario: Snubbing oscillation in optocoupler-isolated feedback loops of isolated flyback converters operating at 500 kHz. IC Role / Device Role / Timing Role: Series-connected diode pair placed across optocoupler CTR resistor to absorb ringing energy during MOSFET turn-off transitions. Use Value: Reduces feedback loop jitter by 35% compared to RC snubbers, improving output voltage regulation stability over line/load variation. |
Use Scenario: Level-shifting I²C signals between 1.8 V microcontroller GPIO and 3.3 V sensor interface in portable medical devices. IC Role / Device Role / Timing Role: Passive bidirectional level translator using forward-biased diode conduction to clamp high-side voltage and prevent overvoltage on low-voltage pins. Use Value: Achieves <100 ns propagation delay with no active components, eliminating supply dependency and quiescent current draw. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed dual-diode switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BAV99LT1G (ON Semiconductor) | SOT23-3 package (larger footprint), trr = 4 ns, Cd = 2.0 pF, IF = 215 mA per diode | Higher forward current but 33% higher capacitance - less suitable for >100 MHz signal lines | Select when board space allows larger SOT23 and higher continuous current is required over RF performance. |
| MMBD7000LT1G (ON Semiconductor) | SOT23-3, trr = 4 ns, Cd = 2.5 pF, VR = 70 V, AEC-Q101 not specified | Lower VR rating and no automotive qualification - limited to consumer-grade 5–12 V systems | Choose only for cost-sensitive non-automotive designs where 70 V reverse blocking suffices and AEC-Q101 is not mandated. |
Compared with BAV99LT1G and MMBD7000LT1G, BAV99W/DG/B3F offers superior RF performance (1.5 pF vs. ≥2.0 pF) and guaranteed automotive qualification in the smallest SC-70 footprint, making it optimal for space-constrained, safety-critical, and high-frequency signal integrity applications.
Availability
BAV99W/DG/B3F is available at Aetrix Electronics and suitable for automotive infotainment systems, industrial USB-C peripheral hubs, and medical-grade isolated power supplies requiring stable component supply with full traceability and long-term lifecycle support.
Supply support for BAV99W/DG/B3F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert specializing in high-performance, high-reliability discrete, logic, and MOSFET devices, with manufacturing rooted in process technology leadership and automotive-grade quality systems.
The BAV99 series belongs to Nexperia's high-speed switching diode product line, engineered specifically for low-capacitance, fast-recovery signal routing and protection in automotive, industrial, and communications infrastructure applications.
FAQ
What is the maximum continuous forward current rating per diode in BAV99W/DG/B3F?
The BAV99W/DG/B3F is rated for 150 mA continuous forward current per diode at Tamb ≤25 °C, derating linearly to 130 mA at higher ambient temperatures per Table 6 of the datasheet. This rating assumes single-diode operation with adequate PCB copper area for heat dissipation.
Is BAV99W/DG/B3F suitable for bidirectional ESD protection on differential signal pairs?
Yes - its dual-diode series configuration (Pin 1→Pin 3→Pin 2) allows symmetrical clamping between signal and reference rails. With 1.5 pF capacitance and 4 ns trr, it meets IEC 61000-4-2 Level 4 (±15 kV contact) requirements when paired with appropriate series impedance on high-speed differential lines like USB 2.0.
How does the SOT323 package of BAV99W/DG/B3F compare thermally to the SOT23 version (BAV99)?
BAV99W/DG/B3F has a higher junction-to-ambient thermal resistance (625 K/W) than the SOT23-packaged BAV99 (500 K/W), due to smaller pad area and lower copper exposure. Its junction-to-solder-point resistance is 300 K/W, making it more dependent on proper PCB land pattern and solder joint quality for thermal performance.
Does BAV99W/DG/B3F support reverse polarity protection in 24 V automotive systems?
Yes - with VR = 100 V and AEC-Q101 qualification, BAV99W/DG/B3F can be used in series reverse-polarity protection for 24 V systems. Its 150 mA IF rating supports loads up to ~3.6 W at 24 V, and its 4 ns trr prevents latch-up during hot-swap events when combined with appropriate upstream fusing.
BAV99W/DG/B3F Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- BAV99
- Package/Case:
- SC-70, SOT-323
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Diode Configuration:
- 1 Pair Series Connection
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 100 V
- Current - Average Rectified (Io) (per Diode):
- 150mA (DC)
- Voltage - Forward (Vf) (Max) @ If:
- 1.25 V @ 150 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- 4 ns
- Current - Reverse Leakage @ Vr:
- 500 nA @ 80 V
- Operating Temperature - Junction:
- 150°C (Max)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-323
BAV99W/DG/B3F FAQ
1.How can I place an order for BAV99W/DG/B3F through Aetrix?
Please submit a Request for Quotation (RFQ) for BAV99W/DG/B3F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAV99W/DG/B3F reliable?
The price and inventory of BAV99W/DG/B3F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAV99W/DG/B3F is usually 5 days.
3.What payment methods are accepted for BAV99W/DG/B3F?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAV99W/DG/B3F transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAV99W/DG/B3F?
BAV99W/DG/B3F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAV99W/DG/B3F order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAV99W/DG/B3F?
For technical support, including BAV99W/DG/B3F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAV99W/DG/B3F requirements.
6.How does Aetrix verify that BAV99W/DG/B3F is sourced from the original manufacturer or authorized distributors?
All BAV99W/DG/B3F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAV99W/DG/B3F meets industry standards.
7.What is the process for return or replacement of BAV99W/DG/B3F?
All BAV99W/DG/B3F units undergo pre-shipment inspection (PSI). If there is an issue with BAV99W/DG/B3F, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAV99W/DG/B3F part is unused and in its original packaging.
Return procedure for BAV99W/DG/B3F:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BAV99W/DG/B3F Tags
-
BAV99-7-F
Diodes Incorporated
-
BAT54C-7-F
Diodes Incorporated
-
BAV99,215
Nexperia USA Inc.
-
BAT54SLT1G
onsemi
-
BAV70LT1G
onsemi
-
BAT54CLT1G
onsemi
-
BAT54S-7-F
Diodes Incorporated
-
BAV99LT1G
onsemi
-
BAT54S,215
Nexperia USA Inc.
-
BAS40-04LT1G
onsemi
-
MMBD1503-TP
Micro Commercial Co
-
BAV99WT1G
onsemi
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