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Nexperia USA Inc. BAV99W/DG/B4F
- Part No.:
- BAV99W/DG/B4F
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Diode Arrays
- Package:
- -
- Datasheet:
-
BAV99W/DG/B4F.pdf
- Description:
- DIODE ARRAY GEN PURP 100V 150MA
- Quantity:
- Payment:
- Shipping:
Inventory:9,738
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Product details
Overview
BAV99W/DG/B4F from Nexperia is a dual high-speed switching diode in SOT323 (SC-70) package, configured as two independent series-connected diodes sharing a common terminal (anode of D1/cathode of D2 at Pin 3). It delivers trr ≤4 ns reverse recovery time, Cd ≤1.5 pF capacitance, and VR = 100 V, enabling fast signal routing and polarity protection in compact DC-DC converters and USB interface circuits.
For engineers reviewing the BAV99W/DG/B4F datasheet, BAV99W/DG/B4F pinout, BAV99W/DG/B4F application, or BAV99W/DG/B4F equivalent, key selection criteria include its AEC-Q101 qualification, low-leakage performance (IR ≤0.5 μA at VR = 80 V), thermal resistance Rth(j-a) = 625 K/W, and compatibility with reflow soldering per JEDEC J-STD-020.
Technical Context
The BAV99W operates as a dual discrete diode pair with shared central terminal (Pin 3), supporting independent forward conduction paths: D1 (Pin 1→Pin 3) and D2 (Pin 3→Pin 2). Its silicon planar construction enables stable junction temperature up to 150 °C and guarantees trr ≤4 ns under IF/IR = 10 mA switching with RL = 100 Ω.
Designed for high-frequency signal steering, it maintains Cd ≤1.5 pF at 1 MHz and VR = 0 V, and exhibits VF = 855 mV typ. at IF = 10 mA - critical for minimizing voltage drop in low-voltage bias networks and ESD-clamp auxiliary paths.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Voltage (VR) | 100 V - supports input rail protection up to 80 V DC without breakdown. |
| Reverse Recovery Time (trr) | ≤4 ns - enables reliable operation in >100 MHz switching nodes and RF detector circuits. |
| Diode Capacitance (Cd) | ≤1.5 pF at 1 MHz, VR = 0 V - minimizes signal coupling and timing skew in high-speed data lines. |
| Forward Current (IF) | 150 mA continuous - sufficient for logic-level clamping and low-power supply rail OR-ing. |
| Reverse Current (IR) | ≤0.5 μA at VR = 80 V - ensures low standby power loss in battery-backed systems. |
| Thermal Resistance (Rth(j-a)) | 625 K/W - defines derating curve for ambient temperatures up to +150 °C on standard FR4 PCB. |
Pinout & Package
BAV99W/DG/B4F is housed in a SOT323 (SC-70) plastic surface-mount package measuring 2.2 × 1.35 × 0.9 mm, optimized for high-density PCB layouts and automated placement.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Anode of Diode 1 | Input node for first diode path; connects to source in reverse-polarity protection. |
| Pin 2 | Cathode of Diode 2 | Output node for second diode path; ties to load in series-switching configurations. |
| Pin 3 | Common Terminal (Anode of D2 / Cathode of D1) | Shared junction enabling dual-diode topology in 3-pin footprint; critical for compact OR-gate and clamp designs. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD (HBM ≥8 kV). |
| Low trr ≤4 ns | Enables clean edge transitions in 50–200 MHz clock distribution and pulse shaping circuits. |
| Low Cd ≤1.5 pF | Preserves signal integrity in USB 2.0 D+/D− lines and LVDS receiver inputs. |
| VF = 855 mV @ 10 mA | Reduces forward drop in 3.3 V and 5 V logic-level clamping networks versus Schottky alternatives. |
| Rth(j-sp) = 300 K/W | Supports localized thermal management via solder-point conduction on thermally enhanced pads. |
Applications
| USB Port Polarity Protection | High-Speed Logic-Level Clamping |
|---|---|
|
Use Scenario: Preventing damage from reversed USB cable insertion in host/device ports. IC Role / Device Role / Timing Role: Dual-diode configuration provides bidirectional reverse-voltage blocking while maintaining low forward drop on VBUS and GND paths. Use Value: Eliminates need for external MOSFET-based protection ICs; achieves <100 ns response with no control logic required. |
Use Scenario: Clamping TTL/CMOS signal overshoot on microcontroller GPIOs exposed to noisy industrial sensors. IC Role / Device Role / Timing Role: Fast-switching diode pair shunts transient spikes above VCC or below GND using internal parasitic capacitance and low trr. Use Value: Limits voltage excursions to ±0.7 V with sub-ns reaction time, preserving I/O latch-up immunity without degrading rise/fall times. |
| DC-DC Converter Feedback Path | RF Detector Bias Network |
|
Use Scenario: Isolating feedback resistors from output ripple in synchronous buck regulators. IC Role / Device Role / Timing Role: Series diode blocks reverse current during light-load discontinuous conduction mode, stabilizing error amplifier input. Use Value: Prevents feedback node perturbation during phase reversal, improving regulation accuracy by >0.5% across 10:1 load steps. |
Use Scenario: Providing temperature-stable bias to GaAs FET detectors in 2.4 GHz WLAN front-ends. IC Role / Device Role / Timing Role: Low-Cd dual diode supplies matched DC offset while rejecting RF coupling between detector and LNA stages. Use Value: Maintains detector linearity (IP3 >25 dBm) across −40 to +85 °C with <0.1 dB gain drift. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed switching diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BAV99LT1G (ON Semiconductor) | SOT23-3 package; trr ≤4 ns, Cd ≤2.0 pF, VR = 70 V | Limited to ≤70 V systems; higher capacitance reduces RF isolation margin | Prefer when legacy SOT23 footprint compatibility is mandatory and VR ≤70 V suffices. |
| MMBD7000LT1G (ON Semiconductor) | SOT23-3; trr ≤4 ns, Cd ≤2.5 pF, IR ≤100 nA @ VR = 25 V | Lower leakage but higher Cd compromises high-frequency signal integrity | Select only for ultra-low-leakage bias networks where speed >100 MHz is not required. |
Compared with BAV99W/DG/B4F, the BAV99LT1G trades 30 V lower VR and larger package for broader board-level compatibility, while the MMBD7000LT1G sacrifices RF performance for nanoscale leakage - making the BAV99W optimal for space-constrained, 100 V-rated, high-frequency applications.
Availability
BAV99W/DG/B4F is available at Aetrix Electronics and suitable for USB interface protection, DC-DC converter feedback isolation, and RF detector bias networks requiring stable component supply across automotive, industrial, and consumer electronics programs.
Supply support for BAV99W/DG/B4F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert delivering high-performance, reliable discrete, logic, and MOSFET devices, with leadership in efficiency, miniaturization, and automotive qualification.
The BAV99 series belongs to Nexperia's high-speed switching diode product line, engineered specifically for signal integrity preservation and robust polarity protection in space- and power-constrained applications.
FAQ
What is the maximum continuous forward current rating for BAV99W/DG/B4F?
The BAV99W/DG/B4F is rated for 150 mA continuous forward current (IF) at Tamb ≤25 °C, derating linearly to 130 mA at higher ambient temperatures per its limiting values table. This rating applies per diode element and assumes operation within the specified thermal resistance envelope on standard FR4 PCB.
Is BAV99W/DG/B4F suitable for automotive applications?
Yes - BAV99W/DG/B4F is AEC-Q101 qualified, having passed stress tests including high-temperature reverse bias, temperature cycling, and ESD (HBM ≥8 kV). It is approved for use in automotive infotainment, body control modules, and ADAS sensor interfaces where high-speed switching and reliability are required.
How does the pin configuration of BAV99W differ from BAV99S?
BAV99W uses a 3-pin SOT323 package with pins 1 (D1 anode), 2 (D2 cathode), and 3 (common cathode/anode); BAV99S uses a 6-pin SOT363 package hosting four diodes in two independent series pairs. The BAV99W offers half the channel count but 30% smaller footprint and lower parasitic inductance due to shorter internal leads.
Can BAV99W/DG/B4F be used in RF applications above 1 GHz?
No - while its 1.5 pF capacitance and 4 ns trr support up to ~200 MHz signal routing, parasitic package inductance and junction characteristics limit effective use beyond 500 MHz. For >1 GHz RF switching, purpose-built GaAs or PIN diodes with sub-0.5 pF Cd and integrated matching are recommended.
BAV99W/DG/B4F Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- BAV99
- Package/Case:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Diode Configuration:
- 1 Pair Series Connection
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 100 V
- Current - Average Rectified (Io) (per Diode):
- 150mA (DC)
- Voltage - Forward (Vf) (Max) @ If:
- 1.25 V @ 150 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- 4 ns
- Current - Reverse Leakage @ Vr:
- 500 nA @ 80 V
- Operating Temperature - Junction:
- 150°C (Max)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- -
BAV99W/DG/B4F FAQ
1.How can I place an order for BAV99W/DG/B4F through Aetrix?
Please submit a Request for Quotation (RFQ) for BAV99W/DG/B4F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAV99W/DG/B4F reliable?
The price and inventory of BAV99W/DG/B4F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAV99W/DG/B4F is usually 5 days.
3.What payment methods are accepted for BAV99W/DG/B4F?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAV99W/DG/B4F transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAV99W/DG/B4F?
BAV99W/DG/B4F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAV99W/DG/B4F order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAV99W/DG/B4F?
For technical support, including BAV99W/DG/B4F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAV99W/DG/B4F requirements.
6.How does Aetrix verify that BAV99W/DG/B4F is sourced from the original manufacturer or authorized distributors?
All BAV99W/DG/B4F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAV99W/DG/B4F meets industry standards.
7.What is the process for return or replacement of BAV99W/DG/B4F?
All BAV99W/DG/B4F units undergo pre-shipment inspection (PSI). If there is an issue with BAV99W/DG/B4F, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAV99W/DG/B4F part is unused and in its original packaging.
Return procedure for BAV99W/DG/B4F:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BAV99W/DG/B4F Tags
-
BAV99-7-F
Diodes Incorporated
-
BAT54C-7-F
Diodes Incorporated
-
BAV99,215
Nexperia USA Inc.
-
BAT54SLT1G
onsemi
-
BAV70LT1G
onsemi
-
BAT54CLT1G
onsemi
-
BAT54S-7-F
Diodes Incorporated
-
BAV99LT1G
onsemi
-
BAT54S,215
Nexperia USA Inc.
-
BAS40-04LT1G
onsemi
-
MMBD1503-TP
Micro Commercial Co
-
BAV99WT1G
onsemi
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