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Nexperia USA Inc. BAV99W/MIF
- Part No.:
- BAV99W/MIF
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Diode Arrays
- Package:
- SC-70, SOT-323
- Datasheet:
-
BAV99W/MIF.pdf
- Description:
- DIODE ARRAY GP 100V 150MA SOT323
- Quantity:
- Payment:
- Shipping:
Inventory:4,157
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Product details
Overview
BAV99W from Nexperia is a dual high-speed switching diode in SOT323 (SC-70) package, configured as two independent diodes sharing a common terminal (anode of D1 and cathode of D2 tied to pin 3). It delivers trr ≤ 4 ns reverse recovery time, Cd ≤ 1.5 pF capacitance, and VR = 100 V, enabling use in compact, high-frequency signal routing and polarity protection circuits.
For engineers reviewing the BAV99W datasheet, BAV99W pinout, BAV99W application, or BAV99W equivalent, key selection criteria include verified dual-diode topology, sub-4 ns trr at IF = 10 mA/IR = 10 mA, low-leakage operation (IR ≤ 0.5 µA at VR = 80 V), and thermal resistance Rth(j-a) = 625 K/W on FR4 PCB - all critical for space-constrained 5–100 MHz switching designs.
Technical Context
The BAV99W integrates two discrete epitaxial planar diodes in a single SC-70 package with shared terminal (pin 3 = K1/A2), forming a compact dual-diode configuration optimized for bidirectional clamping and series switching. Its silicon process ensures stable trr ≤ 4 ns under standardized test conditions (IF = 10 mA, IR = 10 mA, RL = 100 Ω).
Thermal performance is defined for FR4 PCB mounting: Rth(j-a) = 625 K/W (single diode loaded, free air) and Rth(j-sp) = 300 K/W, supporting continuous IF ≤ 150 mA per diode with VF ≤ 1.25 V at 25 °C. Junction temperature is rated to 150 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse voltage (VR) | 100 V - supports DC blocking and transient suppression up to industrial 80 V bus levels |
| Reverse recovery time (trr) | ≤ 4 ns - enables reliable operation in 50–100 MHz digital signal routing and RF detector stages |
| Diode capacitance (Cd) | ≤ 1.5 pF at 0 V - minimizes signal loading in high-impedance, high-frequency node applications |
| Forward voltage (VF) | ≤ 855 mV at IF = 10 mA - ensures low conduction loss in low-power logic-level clamping |
| Reverse current (IR) | ≤ 0.5 µA at VR = 80 V, 25 °C - maintains signal integrity in precision analog front-ends |
| Package | SOT323 (SC-70), 2.0 × 1.25 × 0.95 mm - fits 0.5 mm pitch reflow footprints with minimal board area |
Pinout & Package
SOT323 (SC-70) plastic surface-mount package: 3-terminal, 1.3 mm lead pitch, 2.0 mm × 1.25 mm × 0.95 mm body, designed for standard reflow soldering per Figure 8 footprint (2.65 mm × 2.35 mm land pattern).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Anode of Diode 1 (A1) | Input terminal for forward conduction path of first diode; connects to signal source in clamp or switch position |
| 2 | Cathode of Diode 2 (K2) | Output terminal for forward conduction path of second diode; used for polarity-reversal isolation or dual-rail protection |
| 3 | Cathode of Diode 1 / Anode of Diode 2 (K1, A2) | Shared internal node enabling compact dual-diode topology; eliminates need for external interconnect in series-switch configurations |
Key Features
| Feature | Design Value |
|---|---|
| Dual-diode integration in SC-70 | Reduces PCB area by ~40% vs. two discrete SOT23 diodes while maintaining independent anode/cathode access |
| Sub-4 ns reverse recovery | Enables clean edge transitions in 50+ MHz clock distribution and data line steering without ringing |
| 1.5 pF junction capacitance | Limits capacitive loading to <0.5% of typical 50 Ω transmission line impedance at 100 MHz |
| 150 °C max junction temperature | Supports sustained operation in sealed enclosures or near heat-generating ICs without derating below 130 mA |
| 0.5 µA max reverse leakage @ 80 V | Preserves accuracy in high-impedance bias networks and sensor interface circuits over full industrial temp range |
Applications
| High-Speed Signal Routing | Reverse Polarity Protection |
|---|---|
Use Scenario: Steering logic-level clock or data signals between multiple sources and a single receiver in FPGA I/O banks. IC Role / Device Role / Timing Role: Dual-diode acts as bidirectional signal gate, leveraging pin 3 as common node to route either direction without cross-talk. Use Value: 4 ns trr prevents pulse distortion at 50 MHz; 1.5 pF Cd avoids measurable delay skew across parallel lines. |
Use Scenario: Protecting 3.3 V or 5 V microcontroller power inputs against accidental battery reversal in portable instrumentation. IC Role / Device Role / Timing Role: One diode conducts during correct polarity; second blocks reverse current using K2–K1/A2 path. Use Value: 100 V VR rating provides 3× margin over 3.3/5 V rails; 0.5 µA IR ensures <1 µW standby loss. |
| RF Detector Clamping | Logic-Level Translation Interface |
Use Scenario: Limiting input amplitude to ±0.8 V in 2.4 GHz ISM-band envelope detector front-ends. IC Role / Device Role / Timing Role: Diode pair clips positive/negative excursions using A1–K1/A2 and K1/A2–K2 paths. Use Value: Low Cd preserves detector Q-factor; 855 mV VF ensures precise clipping threshold at 10 mA bias. |
Use Scenario: Level-shifting UART TX/RX lines between 1.8 V SoC and 3.3 V peripheral without active circuitry. IC Role / Device Role / Timing Role: Forward-biased diode drops ~0.7 V; reverse-biased diode blocks backfeed during idle states. Use Value: 4 ns trr prevents false edge detection during 2 Mbps UART transitions; SOT323 footprint saves space on dense MCU boards. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual high-speed switching diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BAV99DW | Same die, but marked "A7" instead of "A7%"; identical electrical specs and SOT323 package | No functional difference; marking variation reflects manufacturing site code, not performance or qualification | Select when exact marking compliance is required for traceability or audit purposes |
| MMBD7000LT1G | trr = 4 ns (same), but Cd = 2.5 pF (higher); VR = 70 V (lower); VF = 1.25 V @ 100 mA (higher) | Less suitable for >50 MHz signal routing due to higher capacitance; acceptable for lower-frequency protection | Choose only if BAV99W is unavailable and design operates below 30 MHz with VR ≤ 70 V |
Compared with BAV99W, BAV99DW offers identical performance with minor marking variance, while MMBD7000LT1G trades higher capacitance and lower VR for broader distributor availability - making BAV99W optimal for high-frequency, space-constrained designs requiring 100 V rating and minimal Cd.
Availability
BAV99W is available at Aetrix Electronics and suitable for high-speed signal routing, reverse polarity protection, and RF detector clamping requiring stable component supply, consistent parametric performance, and long-term SMT assembly compatibility.
Supply support for BAV99W includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified and industrial-grade components.
The BAV99W belongs to Nexperia's high-speed switching diode product line, engineered specifically for compact, high-frequency signal integrity applications where low trr, low Cd, and small-footprint dual-diode topology are essential.
FAQ
What is the maximum continuous forward current per diode in the BAV99W?
The BAV99W supports 150 mA continuous forward current per diode at Tamb ≤ 25 °C on FR4 PCB, with derating to 130 mA when both diodes conduct simultaneously. This rating is validated by thermal resistance Rth(j-a) = 625 K/W and Ptot = 200 mW limit, ensuring safe operation without heatsinking in standard layouts.
Is the BAV99W suitable for automotive applications?
No - the BAV99W is explicitly designated as non-automotive qualified per Nexperia's 2022 revision history. It lacks AEC-Q101 qualification, automotive-grade screening, and extended temperature validation beyond −65 °C to +150 °C ambient. For automotive use, Nexperia recommends the BAV99W-Q variant.
How does the shared pin (pin 3) affect circuit layout?
Pin 3 serves as both cathode of diode 1 and anode of diode 2, enabling compact dual-diode configurations like series switches or bidirectional clamps without external traces. Layout must avoid routing conflicting signals to this node; it functions as a fixed internal connection, not a configurable terminal.
Can the BAV99W replace two separate SOT23 diodes in a design?
Yes - the BAV99W replaces two discrete SOT23 diodes in most dual-switching roles, reducing PCB area by ~35% and eliminating one solder joint. However, it cannot replicate independent cathode/anode isolation; designs requiring fully separated diodes (e.g., isolated power domains) must retain discrete parts.
BAV99W/MIF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- BAV99
- Package/Case:
- SC-70, SOT-323
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Diode Configuration:
- 1 Pair Series Connection
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 100 V
- Current - Average Rectified (Io) (per Diode):
- 150mA (DC)
- Voltage - Forward (Vf) (Max) @ If:
- 1.25 V @ 150 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- 4 ns
- Current - Reverse Leakage @ Vr:
- 500 nA @ 80 V
- Operating Temperature - Junction:
- 150°C (Max)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-323
BAV99W/MIF FAQ
1.How can I place an order for BAV99W/MIF through Aetrix?
Please submit a Request for Quotation (RFQ) for BAV99W/MIF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAV99W/MIF reliable?
The price and inventory of BAV99W/MIF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAV99W/MIF is usually 5 days.
3.What payment methods are accepted for BAV99W/MIF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAV99W/MIF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAV99W/MIF?
BAV99W/MIF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAV99W/MIF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAV99W/MIF?
For technical support, including BAV99W/MIF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAV99W/MIF requirements.
6.How does Aetrix verify that BAV99W/MIF is sourced from the original manufacturer or authorized distributors?
All BAV99W/MIF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAV99W/MIF meets industry standards.
7.What is the process for return or replacement of BAV99W/MIF?
All BAV99W/MIF units undergo pre-shipment inspection (PSI). If there is an issue with BAV99W/MIF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAV99W/MIF part is unused and in its original packaging.
Return procedure for BAV99W/MIF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BAV99W/MIF Tags
-
BAV99-7-F
Diodes Incorporated
-
BAT54C-7-F
Diodes Incorporated
-
BAV99,215
Nexperia USA Inc.
-
BAT54SLT1G
onsemi
-
BAV70LT1G
onsemi
-
BAT54CLT1G
onsemi
-
BAT54S-7-F
Diodes Incorporated
-
BAV99LT1G
onsemi
-
BAT54S,215
Nexperia USA Inc.
-
BAS40-04LT1G
onsemi
-
MMBD1503-TP
Micro Commercial Co
-
BAV99WT1G
onsemi
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