Nexperia USA Inc. BAV99W/MIX

Overview

BAV99W from Nexperia is a dual high-speed switching diode in SOT323 (SC-70) package, configured as two series-connected diodes sharing a common terminal (A1–K1/A2–K2). It delivers trr ≤ 4 ns reverse recovery time, Cd ≤ 1.5 pF capacitance, and VR = 100 V, enabling use in compact DC-DC converter flyback snubbers and USB port polarity protection circuits.

For engineers reviewing the BAV99W datasheet, BAV99W pinout, BAV99W application, or BAV99W equivalent, key selection criteria include verified dual-diode topology, sub-4 ns trr under IF = 10 mA/IR = 10 mA test conditions, low-leakage performance at 80 V reverse bias, and thermal resistance Rth(j-a) = 625 K/W on FR4 PCB.

Technical Context

The BAV99W integrates two independent silicon switching diodes in a single SC-70 package with shared central terminal (Pin 3 = K1/A2), forming a compact dual-anode/cathode configuration. Its epitaxial planar construction enables fast carrier recombination, directly supporting trr ≤ 4 ns at Tamb = 25 °C with 100 Ω load and defined measurement current (IR(meas) = 1 mA).

Thermal design relies on junction-to-ambient resistance of 625 K/W (free air, FR4 PCB), while electrical robustness is defined by absolute maximum ratings: VR = 100 V, IFRM = 500 mA, and Ptot = 200 mW at Tamb ≤ 25 °C - all validated per IEC 60134 limiting values.

Key Specifications

Pinout & Package

SOT323 (SC-70) plastic surface-mount package: 3-terminal, single-row, gull-wing leads; 2.0 mm × 1.25 mm × 0.95 mm body size; 1.3 mm pitch; FR4-compatible footprint per Fig. 8 (reflow) and Fig. 9 (wave).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed dual-diode applications.

Compared with NSR0230P2T5G, BAV99W offers integrated dual-diode functionality in one footprint but with higher VF; versus DMMT3904-7-F, it provides correct semiconductor physics for rectification and clamping, avoiding functional failure in voltage-limiting applications.

Availability

BAV99W is available at Aetrix Electronics and suitable for USB interface protection, RF detector clamping, DC-DC snubber networks, and logic-level translation requiring stable component supply and consistent parametric performance across production lots.

Supply support for BAV99W includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential efficiency technologies, delivering high-performance, reliable discrete and logic devices for automotive, industrial, and consumer markets.

The BAV99W belongs to Nexperia's high-speed switching diode product line, engineered specifically for space-constrained, high-frequency applications where fast recovery, low capacitance, and dual-diode integration are critical system requirements.

FAQ

What is the exact pin configuration of the BAV99W and how is it validated?

The BAV99W has three terminals: Pin 1 = A1 (anode of diode 1), Pin 2 = K2 (cathode of diode 2), Pin 3 = K1/A2 (shared cathode/anode). This configuration is confirmed in Table 2 of the official Nexperia datasheet (v.9, 2022-07-01), supported by the schematic symbol showing two diodes with a common center node and the SC-70 outline diagram labeling each pin explicitly.

Can the BAV99W be used in 5 V USB 2.0 data line ESD protection?

No - the BAV99W is not rated for ESD protection per IEC 61000-4-2. Its 100 V VR rating and 0.5 µA IR at 80 V reflect steady-state blocking, not transient surge handling. For USB data line protection, purpose-built ESD arrays (e.g., Nexperia PESD5V0S1BA) with specified clamping voltage and 15 kV contact discharge capability are required.

How does thermal resistance change when both diodes conduct simultaneously?

When both diodes conduct, total power dissipation remains within the 200 mW Ptot limit only if combined current stays below derated levels. Rth(j-a) = 625 K/W applies per diode under single-diode-loaded conditions on FR4 PCB; simultaneous conduction increases junction temperature proportionally, requiring thermal derating per Figure 4's IFSM vs. pulse duration curves and Table 5's double-diode loaded IF limit of 130 mA.

Is the BAV99W automotive-qualified?

No - the 2022 datasheet revision explicitly states "Product(s) changed to non-automotive qualification" and directs users to Nexperia's automotive-qualified alternatives (e.g., BAV99W-Q series) for AEC-Q101-compliant applications. The BAV99W lacks automotive-grade testing, qualification, and traceability documentation.