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Nexperia USA Inc. BAW101-QR

Part No.:
BAW101-QR
Manufacturer:
Nexperia USA Inc.
Category:
Diode Arrays
Package:
TO-253-4, TO-253AA
Datasheet:
AetrixBAW101-QR.pdf
Description:
DIODE ARR GP 300V 250MA SOT-143B
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,159

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Product details

Overview

BAW101-Q from Nexperia is a high-voltage, high-speed double diode array in SOT143B package, comprising two electrically isolated planar silicon diodes rated for 300 V reverse voltage, 50 ns reverse recovery time, and 250 mA continuous forward current per diode - deployed in automotive-grade high-voltage switching circuits.

For engineers reviewing the BAW101-Q datasheet, BAW101-Q pinout, BAW101-Q application, or BAW101-Q equivalent, key selection criteria include reverse voltage derating at elevated temperature, dual-diode thermal coupling in shared package, AEC-Q101 qualification status, and SOT143B footprint compatibility with FR4 PCB layout constraints.

Technical Context

The BAW101-Q integrates two independent high-voltage switching diodes on a single die substrate within a thermally optimized SOT143B package, enabling compact dual-channel rectification or clamping without inter-diode electrical coupling. Its 300 V VR rating supports series-connected operation up to 600 V, while 50 ns trr ensures suitability for medium-frequency switching above 100 kHz.

Thermal resistance Rth(j-a) is 357 K/W in free air (FR4, 1 cm² cathode pad), and Rth(j-sp) is 255 K/W under solder-point loading - confirming design intent for surface-mount power dissipation up to 350 mW at Tamb ≤ 25 °C with defined PCB copper area.

Key Specifications

Parameter Value and Actual Design Meaning
Reverse Voltage (VR) 300 V per diode - supports 250 V DC bus clamping or flyback snubber in 12 V/24 V automotive systems
Reverse Recovery Time (trr) 50 ns - enables efficient operation in 100–500 kHz switching converters without excessive switching loss
Forward Voltage (VF) 1.1 V at 100 mA - low conduction loss for pulsed current handling in signal routing or protection paths
Reverse Current (IR) 150 nA at 250 V / 25 °C - minimal leakage in high-impedance sensing or bias networks
Diode Capacitance (Cd) 2 pF at 0 V / 1 MHz - preserves signal integrity in RF detector or high-speed logic interface applications
Junction Temperature (Tj) 150 °C maximum - validated for under-hood automotive environments with ambient up to 125 °C

Pinout & Package

SOT143B is a 4-lead, surface-mounted plastic package measuring 2.9 mm × 1.3 mm × 1.0 mm with 1.9 mm lead pitch and defined thermal pad requirements (1 cm² cathode-lead mounting area on FR4).

Pin/Terminal Circuit Role Design Meaning
1 Cathode (Diode 1) Return path for diode 1 anode current; electrically isolated from pin 2
2 Cathode (Diode 2) Return path for diode 2 anode current; independent of pin 1, enabling dual-rail isolation
3 Anode (Diode 2) Input terminal for diode 2; paired with pin 2 for discrete channel routing
4 Anode (Diode 1) Input terminal for diode 1; paired with pin 1; allows independent control of each diode

Key Features

Feature Design Value
Electrically insulated diodes Zero galvanic coupling between channels - enables independent biasing in dual-rail power management
AEC-Q101 qualified Stress-tested per automotive discrete semiconductor standard - supports production deployment in engine control, body electronics, and ADAS modules
High-speed switching (50 ns trr) Minimizes turn-off delay in pulse-width modulated gate drivers or ESD transient clamps
300 V reverse voltage rating Permits direct use in 24 V automotive supply rails with ≥2× safety margin against load-dump transients

Applications

Automotive Load-Dump Protection DC-DC Converter Snubber Circuit

Use Scenario: Suppresses 120 V transients induced by alternator load dump in 12 V vehicle electrical systems.

IC Role / Device Role / Timing Role: Dual-diode clamp connected across input rail and ground, with one diode conducting during positive surge and the other during negative rebound.

Use Value: Leverages 300 V VR and 50 ns trr to absorb energy without latch-up or thermal runaway under ISO 7637-2 Pulse 5a stress.

Use Scenario: Absorbs leakage inductance spikes in synchronous buck converter output stage.

IC Role / Device Role / Timing Role: Fast-recovery diode pair placed across high-side MOSFET drain-source to clamp voltage overshoot during dead-time transitions.

Use Value: 2 pF capacitance minimizes ringing; 1.1 V VF limits conduction loss during brief clamping events.

Automotive CAN Transceiver Bias Network High-Voltage Signal Routing Switch

Use Scenario: Provides bidirectional ESD protection and DC bias isolation for CAN_H/CAN_L lines in junction box modules.

IC Role / Device Role / Timing Role: Dual diode array used in back-to-back configuration to clamp ±30 kV HBM transients while maintaining common-mode voltage stability.

Use Value: 150 nA IR at 250 V prevents signal distortion in 1 Mbps CAN FD data transmission.

Use Scenario: Routes 100–200 V analog sensor signals in battery management system (BMS) cell monitoring circuits.

IC Role / Device Role / Timing Role: High-voltage diode switch selects between multiple voltage sources using external pull-up/pull-down control on anode/cathode terminals.

Use Value: Electrical isolation between pins 1 and 2 enables independent channel enable/disable without crosstalk or leakage-induced offset.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage dual-diode applications.

Alternative Part Technical Difference Application Difference Selection Advice
BAV99W-Q Lower VR (100 V), faster trr (4 ns), same SOT323 package Not suitable for >120 V transient suppression; limited to low-voltage signal routing Select when speed dominates over voltage rating and space is constrained
ESD5Z3.3T5G Single-channel TVS diode, 3.3 V clamping, 30 kW peak power Designed for ESD-only protection, not continuous high-voltage switching Choose only for IEC 61000-4-2 compliance where clamping voltage must be <5 V

Compared with BAV99W-Q and ESD5Z3.3T5G, the BAW101-Q uniquely balances 300 V standoff, 50 ns switching, and dual-channel isolation - making it irreplaceable in automotive high-side switching nodes requiring both voltage headroom and channel independence.

Availability

BAW101-Q is available at Aetrix Electronics and suitable for automotive load-dump protection, DC-DC converter snubbing, and high-voltage signal routing requiring stable component supply across Tier-1 supplier programs and industrial OEM designs.

Supply support for BAW101-Q includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential efficiency technologies, delivering high-performance, reliable discrete and logic devices for automotive, industrial, and consumer markets.

The BAW101-Q belongs to Nexperia's AEC-Q101-qualified high-voltage diode portfolio, engineered specifically for robust operation in automotive power management and transient protection applications where reliability under thermal and electrical stress is non-negotiable.

FAQ

Is the BAW101-Q suitable for series connection of both diodes to achieve 600 V reverse blocking?

Yes - the datasheet explicitly specifies 600 V repetitive peak reverse voltage (VRRM) for series connection, provided matched diodes are used and voltage-sharing resistors are applied to ensure balanced stress. This capability is validated per IEC 60134 limiting values and supported by thermal derating curves up to 150 °C junction temperature.

What is the recommended PCB layout for thermal performance in high-current operation?

Mount the device on FR4 with 1 cm² copper area connected to each cathode pad (pins 1 and 2), using minimum 2 oz copper thickness and thermal vias to inner layers. The datasheet defines Rth(j-a) = 357 K/W and Rth(j-sp) = 255 K/W under these conditions - achieving full 350 mW power dissipation requires strict adherence to this layout.

Does the BAW101-Q meet ISO 7637-2 Pulse 5a requirements for automotive load-dump protection?

Yes - its 300 V VR, 4.5 A IFSM, and 150 °C Tj(max) allow it to withstand the 120 V/350 ms load-dump waveform when properly heatsinked. Application note AN11507 confirms its use in validated Nexperia reference designs for 12 V vehicle systems meeting ISO 7637-2 compliance.

Can pins 1 and 2 be shorted together to increase forward current capacity?

No - the datasheet specifies separate 250 mA (single diode) and 140 mA (double diode loaded) forward current ratings. Shorting cathodes violates the electrically insulated diode architecture and risks thermal imbalance, premature failure, and voiding AEC-Q101 qualification. Each diode must be operated independently per pinning definition.

BAW101-QR Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
TO-253-4, TO-253AA
Packaging:
Tape & Reel (TR)
Product Status:
Active
Diode Configuration:
2 Independent
Technology:
Standard
Voltage - DC Reverse (Vr) (Max):
300 V
Current - Average Rectified (Io) (per Diode):
250mA
Voltage - Forward (Vf) (Max) @ If:
1.1 V @ 100 mA
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
50 ns
Current - Reverse Leakage @ Vr:
150 nA @ 250 V
Operating Temperature - Junction:
150°C
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-143B

BAW101-QR FAQ

1.How can I place an order for BAW101-QR through Aetrix?

Please submit a Request for Quotation (RFQ) for BAW101-QR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BAW101-QR reliable?

The price and inventory of BAW101-QR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAW101-QR is usually 5 days.

3.What payment methods are accepted for BAW101-QR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAW101-QR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BAW101-QR?

BAW101-QR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BAW101-QR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BAW101-QR?

For technical support, including BAW101-QR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAW101-QR requirements.

6.How does Aetrix verify that BAW101-QR is sourced from the original manufacturer or authorized distributors?

All BAW101-QR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAW101-QR meets industry standards.

7.What is the process for return or replacement of BAW101-QR?

All BAW101-QR units undergo pre-shipment inspection (PSI). If there is an issue with BAW101-QR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BAW101-QR part is unused and in its original packaging.

Return procedure for BAW101-QR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

BAW101-QR Tags

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