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Nexperia USA Inc. BAW101S,115
- Part No.:
- BAW101S,115
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Diode Arrays
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
BAW101S,115.pdf
- Description:
- DIODE ARRAY GP 300V 250MA 6TSSOP
- Quantity:
- Payment:
- Shipping:
Inventory:28,517
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Product details
Overview
BAW101S from Nexperia is a high-voltage double diode array comprising two electrically isolated, high-speed switching diodes in a single SOT363 (TSSOP6) surface-mount package. Each diode supports 300 V reverse voltage, 250 mA forward current, and achieves ≤50 ns reverse recovery time - enabling robust high-voltage switching in compact automotive and telecom signal paths.
For engineers reviewing the BAW101S datasheet, BAW101S pinout, BAW101S application, or BAW101S equivalent, this dual-diode array delivers verified high-voltage isolation, fast recovery for pulse-edge integrity, thermal performance up to 150 °C junction temperature, and FR4-optimized power dissipation - critical for space-constrained industrial and communication power rail protection.
Technical Context
The BAW101S integrates two independent planar silicon diodes on separate dice within one monolithic SOT363 package, ensuring electrical isolation between anode–cathode pairs. Its 300 V repetitive peak reverse voltage (VRRM) and 50 ns trr are specified under standardized test conditions (IF = 30 mA, IR = 30 mA, RL = 100 Ω, Tj = 25 °C).
Thermal design is supported by Rth(j-a) = 357 K/W (FR4, 1 cm² cathode pad) and Rth(j-sp) = 255 K/W, with derating curves confirming 140 mA max forward current when both diodes operate simultaneously at elevated ambient temperatures.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 300 V - maximum repetitive reverse voltage per diode; defines safe blocking capability in high-side switch or clamp applications |
| IF (per diode) | 250 mA - continuous forward current rating at Tamb ≤ 25 °C; usable up to 140 mA when both diodes conduct simultaneously |
| trr | 50 ns - reverse recovery time measured at IR = 3 mA; ensures minimal switching loss and EMI in kHz–MHz switching circuits |
| VF @ 100 mA | 1.1 V - forward voltage drop at 100 mA pulsed; determines conduction loss and self-heating in rectifier or clamping roles |
| IR @ 250 V | 150 nA - reverse leakage at 25 °C; enables low-power standby operation and high-impedance signal routing |
| Cd @ 0 V | 2 pF - junction capacitance at zero bias; supports high-frequency signal integrity in RF detector or ESD front-end stages |
| Rth(j-a) | 357 K/W - junction-to-ambient thermal resistance on FR4; informs PCB copper area requirements for thermal management |
Pinout & Package
Package: SOT363 (TSSOP6), 2.1 mm × 1.25 mm × 0.95 mm body, 0.65 mm lead pitch, plastic surface-mount package with exposed cathode pads for thermal relief.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | A1 | Anode of Diode 1 - connects to positive side of first switching path; requires external current-limiting or series impedance |
| 2 | n.c. | Not connected - no internal bond wire; must remain unconnected to avoid parasitic coupling or mechanical stress |
| 3 | K2 | Cathode of Diode 2 - common return node for second diode; shares thermal pad with Pin 6 in layout |
| 4 | A2 | Anode of Diode 2 - independent input for second high-voltage path; electrically isolated from A1/K1 |
| 5 | n.c. | No connection - floating terminal; no internal function; must be left unconnected on PCB |
| 6 | K1 | Cathode of Diode 1 - dedicated return for first diode; thermally coupled to Pin 3 for shared heat sinking |
Key Features
| Feature | Design Value |
|---|---|
| Electrically isolated dual diodes | Two independent PN junctions on separate dice - enables simultaneous but non-interacting high-voltage signal routing or redundancy |
| High-speed switching | 50 ns trr - minimizes dead-time distortion and cross-conduction risk in synchronous rectifier or flyback snubber designs |
| High reverse voltage rating | 300 V VRRM - supports direct interface with 230 VAC-derived rails or 24/48 V telecom systems without external voltage division |
| Thermally optimized SOT363 | Rth(j-sp) = 255 K/W - allows efficient heat transfer to PCB solder points, reducing need for large thermal vias in dense layouts |
| Low junction capacitance | 2 pF Cd - preserves signal rise/fall times in high-frequency detector, sampling, or RF protection applications |
Applications
| Automotive Signal Clamping | Telecom Line Protection |
|---|---|
Use Scenario: Protecting CAN transceiver inputs against load-dump transients and ISO 7637-2 pulses in 12 V vehicle networks. IC Role / Device Role / Timing Role: High-voltage bidirectional clamp diode pair absorbing ±100 V spikes while maintaining signal integrity below 1 MHz. Use Value: 300 V VRRM withstands worst-case transients; 50 ns trr prevents latch-up during fast edge events; dual isolation avoids channel crosstalk. |
Use Scenario: Shielding Ethernet PHY or RS-485 transceivers from ESD and lightning-induced surges on outdoor data lines. IC Role / Device Role / Timing Role: Fast-recovery, low-capacitance clamping diode array shunting surge energy before IC damage occurs. Use Value: 2 pF Cd preserves 100 Mbps signal fidelity; 150 nA IR ensures minimal DC loading on bias networks; SOT363 footprint fits tight board spacing. |
| Industrial Power Supply Snubbing | High-Voltage Sensor Interface |
Use Scenario: Damping voltage spikes across MOSFET drains in offline SMPS flyback converters operating at 65–100 kHz. IC Role / Device Role / Timing Role: Dual-diode snubber network clamping turn-off overshoot and recovering stored inductive energy. Use Value: 300 V rating matches 650 V MOSFET drain ratings; 50 ns trr synchronizes with typical MOSFET switching edges; dual configuration enables split-snubber topologies. |
Use Scenario: Level-shifting and overvoltage protection for analog sensor outputs in PLC I/O modules handling ±10 V or 24 V field signals. IC Role / Device Role / Timing Role: Precision clamping diode pair limiting input voltage to ADC front-end while rejecting common-mode noise. Use Value: Electrically isolated diodes prevent ground-loop interference; 1.1 V VF ensures predictable clamping threshold; 150 nA IR avoids sensor output loading. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage dual-diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BAV99W,115 | Same SOT363 package, but lower 70 V VRRM and faster 4 ns trr; VF = 1.25 V @ 100 mA | Better suited for low-voltage, ultra-high-speed logic clamping; insufficient for >100 V transient suppression | Select when speed dominates voltage rating - e.g., digital signal line protection below 24 V |
| ESD9B5.0ST5G | 5 V standoff, 30 kV ESD-rated TVS array in SOT-553; not a switching diode - higher capacitance (15 pF), slower response | Designed for ESD-only events, not sustained overvoltage or switching; lacks reverse recovery specification | Choose only for IEC 61000-4-2 compliance where clamping voltage < 12 V is mandatory and switching is absent |
Compared with BAV99W,115 and ESD9B5.0ST5G, the BAW101S uniquely balances 300 V blocking, 50 ns switching, and dual-isolation in SOT363 - making it the sole option among these three for high-voltage, high-speed, and electrically separated dual-diode functions.
Availability
BAW101S is available at Aetrix Electronics and suitable for automotive signal clamping, telecom line protection, and industrial power supply snubbing requiring stable component supply, consistent parametric performance, and long-term production continuity.
Supply support for BAW101S includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on essential efficiency technologies, delivering high-performance, reliable discrete and logic devices for automotive, industrial, and consumer markets.
The BAW101S belongs to Nexperia's high-voltage switching diode product line, engineered specifically for robust transient suppression and fast-switching isolation in space-constrained, thermally demanding environments.
FAQ
Is the BAW101S automotive-qualified?
No. Per Nexperia's 2022 revision history, the BAW101S is explicitly designated as non-automotive qualified. It is not tested to AEC-Q101 or subjected to automotive-grade qualification stress profiles. For automotive use, select variants suffixed with "-Q", such as BAW101SQ.
What does "n.c." mean for Pins 2 and 5?
"n.c." stands for "not connected" - these pins have no internal bond wires or silicon connections. They must remain unconnected on the PCB to prevent mechanical stress, unintended coupling, or solder bridging. No pull-up, pull-down, or grounding is required or recommended.
Can both diodes operate simultaneously at full 250 mA rating?
No. The datasheet specifies 250 mA per diode only when operated individually. When both diodes conduct simultaneously, the maximum forward current is derated to 140 mA total (70 mA per diode) due to thermal coupling and shared package dissipation limits - confirmed by Figure 1's dual-load derating curve.
How is thermal performance affected by PCB layout?
Thermal resistance values assume mounting on FR4 with 1 cm² cathode-lead copper area. Reducing pad size increases Rth(j-a); adding thermal vias under Pins 3 and 6 lowers Rth(j-sp). Layout deviations directly impact maximum allowable current - e.g., halving pad area raises Rth(j-a) by ~30 %, requiring ~25 % current derating.
BAW101S,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Diode Configuration:
- 2 Independent
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 300 V
- Current - Average Rectified (Io) (per Diode):
- 250mA (DC)
- Voltage - Forward (Vf) (Max) @ If:
- 1.1 V @ 100 mA
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 50 ns
- Current - Reverse Leakage @ Vr:
- 150 nA @ 250 V
- Operating Temperature - Junction:
- 150°C (Max)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-TSSOP
BAW101S,115 FAQ
1.How can I place an order for BAW101S,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for BAW101S,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAW101S,115 reliable?
The price and inventory of BAW101S,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAW101S,115 is usually 5 days.
3.What payment methods are accepted for BAW101S,115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAW101S,115 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAW101S,115?
BAW101S,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAW101S,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAW101S,115?
For technical support, including BAW101S,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAW101S,115 requirements.
6.How does Aetrix verify that BAW101S,115 is sourced from the original manufacturer or authorized distributors?
All BAW101S,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAW101S,115 meets industry standards.
7.What is the process for return or replacement of BAW101S,115?
All BAW101S,115 units undergo pre-shipment inspection (PSI). If there is an issue with BAW101S,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAW101S,115 part is unused and in its original packaging.
Return procedure for BAW101S,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BAW101S,115 Tags
-
BAV99-7-F
Diodes Incorporated
-
BAT54C-7-F
Diodes Incorporated
-
BAV99,215
Nexperia USA Inc.
-
BAT54SLT1G
onsemi
-
BAV70LT1G
onsemi
-
BAT54CLT1G
onsemi
-
BAT54S-7-F
Diodes Incorporated
-
BAV99LT1G
onsemi
-
BAT54S,215
Nexperia USA Inc.
-
BAS40-04LT1G
onsemi
-
MMBD1503-TP
Micro Commercial Co
-
BAV99WT1G
onsemi
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