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Nexperia USA Inc. BAW156,215
- Part No.:
- BAW156,215
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Diode Arrays
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
BAW156,215.pdf
- Description:
- DIODE ARRAY GP 75V 160MA TO236AB
- Quantity:
- Payment:
- Shipping:
Inventory:37,424
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Product details
Overview
BAW156,215 from Nexperia is a low-leakage, medium-speed switching double diode in common-anode configuration, housed in an SOT23 plastic SMD package. It delivers 3 pA typical reverse leakage at 75 V, 0.8 µs reverse recovery time, and supports 500 mA repetitive peak forward current - enabling precision signal routing and voltage clamping in automotive sensor interfaces.
For engineers reviewing the BAW156,215 datasheet, BAW156,215 pinout, BAW156,215 application, or BAW156,215 equivalent, this dual diode is selected for low-current bias networks, ESD-protected analog front-ends, and AEC-Q101-compliant automotive signal conditioning where leakage and switching speed are critical.
Technical Context
The BAW156,215 integrates two epitaxial silicon diodes sharing a single anode terminal (Pin 3), forming a compact dual-cathode topology ideal for bidirectional clamping or dual-path signal steering. Its 3 pA typical IR at 75 V and 0.8 µs trr reflect optimized junction design for low-noise, fast transient response.
Rated for 85 V repetitive peak reverse voltage and qualified to AEC-Q101, it operates reliably across −55 °C to +150 °C ambient, with thermal resistance Rth(j-a) = 500 K/W on FR4 PCB - confirming suitability for thermally constrained automotive modules.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse leakage current | 3 pA typ. at VR = 75 V, Tj = 25 °C - enables nanoamp-level bias stability in high-impedance sensor circuits |
| Reverse recovery time | 0.8 µs typ. at IF/IR = 10 mA, RL = 100 Ω - supports >1 MHz switching in signal path protection |
| Repetitive peak reverse voltage | 85 V - withstands automotive load-dump transients without breakdown |
| Repetitive peak forward current | 500 mA - handles pulsed drive for dual-channel LED indicators or logic-level clamping |
| Junction-to-ambient thermal resistance | 500 K/W - limits temperature rise to <125 K at 250 mW dissipation on standard FR4 |
| Diode capacitance | 3 pF typ. at VR = 0 V, f = 1 MHz - minimizes signal distortion in RF-adjacent analog paths |
Pinout & Package
SOT23 plastic surface-mounted package (3-terminal, 1.9 mm pitch, 2.9 × 1.3 × 1.0 mm body); JEDEC TO-236AB compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | K1 (cathode of diode 1) | Provides dedicated cathode connection for first diode; routed to signal path requiring independent clamping |
| 2 | K2 (cathode of diode 2) | Independent cathode for second diode; enables dual-rail protection or differential input conditioning |
| 3 | CA (common anode) | Shared anode node - simplifies PCB layout by eliminating redundant anode traces and reducing parasitic inductance |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive underhood applications including engine control units and body electronics |
| Low leakage current | 3 pA typical ensures minimal error current in precision op-amp feedback networks and battery-monitoring dividers |
| Fast switching performance | 0.8 µs trr enables clean edge handling in CAN/LIN bus termination and digital I/O protection |
| Common-anode dual-diode topology | Reduces component count and board area vs. discrete diode pairs in rail-to-rail clamp designs |
Applications
| Automotive Sensor Signal Conditioning | High-Impedance Analog Front-End Protection |
|---|---|
Use Scenario: Protecting thermistor or Hall-effect sensor outputs from ESD and overvoltage in engine management systems. IC Role / Device Role / Timing Role: Dual-cathode clamping diode providing bidirectional voltage limiting to ±0.7 V above/below rails. Use Value: 3 pA leakage preserves sensor accuracy; 85 V VRRM survives ISO 7637-2 pulse 5a transients. |
Use Scenario: Guarding instrumentation amplifier inputs in battery monitoring ICs against coupling noise and static discharge. IC Role / Device Role / Timing Role: Low-capacitance (3 pF), low-leakage clamp preventing input stage saturation during fault events. Use Value: Sub-picoamp leakage avoids offset drift; common-anode layout minimizes trace inductance for fast transient suppression. |
| Dual-Rail Logic-Level Translation | LED Indicator Current Steering |
Use Scenario: Level-shifting between 3.3 V microcontroller GPIO and 5 V peripheral I/O while maintaining bidirectional signal integrity. IC Role / Device Role / Timing Role: Dual-diode clamp referenced to both VCC rails, using CA tied to mid-supply or ground. Use Value: 0.8 µs trr prevents data corruption at 1 Mbps; 500 mA IFRM supports robust pull-up/pull-down drive. |
Use Scenario: Driving dual-color (red/green) LEDs from a single microcontroller pin via common-anode configuration. IC Role / Device Role / Timing Role: Internal common anode allows independent cathode control for color selection without external transistor. Use Value: 140 mA max continuous forward current per diode (double-loaded) supports bright indicator operation at 2.5 mA per LED. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual-diode clamping applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BAV99,215 | Higher IR (1 nA typ. at 75 V), faster trr (0.5 µs), same SOT23 package and pinout | Better for high-speed digital clamping; unsuitable for sub-nA bias networks | Select when speed outweighs leakage sensitivity - e.g., USB or LVDS line protection |
| MMBD1204 | Lower VRRM (70 V), higher VF (1.25 V typ. at 10 mA), AEC-Q101 qualified | Limited to lower-voltage automotive domains (e.g., infotainment power rails) | Choose for cost-sensitive, non-critical 12 V systems where 85 V margin is unnecessary |
Compared with BAV99,215 and MMBD1204, the BAW156,215 uniquely balances ultra-low leakage (3 pA) with automotive-grade ruggedness (85 V VRRM, AEC-Q101), making it optimal for precision analog sensing rather than generic digital clamping or cost-driven replacements.
Availability
BAW156,215 is available at Aetrix Electronics and suitable for automotive sensor modules, battery management systems, and industrial analog signal conditioners requiring stable component supply with guaranteed long-term availability.
Supply support for BAW156,215 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified components.
The BAW156,215 belongs to Nexperia's AEC-Q101-qualified low-leakage diode product line, engineered specifically for precision analog signal integrity and robust transient protection in automotive and industrial environments.
FAQ
Is the BAW156,215 suitable for high-frequency RF applications?
No - while its 3 pF diode capacitance supports up to ~100 MHz small-signal operation, it lacks specified RF parameters (e.g., S-parameters, noise figure) and is not characterized for RF switching or matching networks. It is intended for signal conditioning and protection below 10 MHz.
Can Pin 3 (CA) be left unconnected or tied to a voltage other than ground/VCC?
No - the common anode must be connected to a defined reference (typically ground or VCC) to establish the clamping threshold. Leaving it floating creates undefined junction bias and risks latch-up or excessive leakage; tying it to intermediate voltages may exceed reverse voltage ratings of one diode.
What is the maximum continuous forward current per diode when both are operated simultaneously?
140 mA - as specified in Table 5 (Limiting values) under "double diode loaded" condition at Tamb = 25 °C on FR4 PCB. This derating accounts for shared thermal path and ensures junction temperature remains ≤150 °C.
Does the 3 pA leakage value apply across the full operating temperature range?
No - 3 pA is typical at Tj = 25 °C. Leakage rises with temperature: Fig. 4 shows typical IR = 3 nA at Tj = 150 °C and VR = 75 V. Designers must verify leakage impact at worst-case junction temperature in their thermal environment.
BAW156,215 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Diode Configuration:
- 1 Pair Common Anode
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 75 V
- Current - Average Rectified (Io) (per Diode):
- 160mA (DC)
- Voltage - Forward (Vf) (Max) @ If:
- 1.25 V @ 150 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- 3 µs
- Current - Reverse Leakage @ Vr:
- 5 nA @ 75 V
- Operating Temperature - Junction:
- 150°C (Max)
- Grade:
- Automotive
- Qualification:
- AEC-Q100
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-236AB
BAW156,215 FAQ
1.How can I place an order for BAW156,215 through Aetrix?
Please submit a Request for Quotation (RFQ) for BAW156,215 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAW156,215 reliable?
The price and inventory of BAW156,215 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAW156,215 is usually 5 days.
3.What payment methods are accepted for BAW156,215?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAW156,215 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAW156,215?
BAW156,215 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAW156,215 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAW156,215?
For technical support, including BAW156,215 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAW156,215 requirements.
6.How does Aetrix verify that BAW156,215 is sourced from the original manufacturer or authorized distributors?
All BAW156,215 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAW156,215 meets industry standards.
7.What is the process for return or replacement of BAW156,215?
All BAW156,215 units undergo pre-shipment inspection (PSI). If there is an issue with BAW156,215, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAW156,215 part is unused and in its original packaging.
Return procedure for BAW156,215:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BAW156,215 Tags
-
BAV99-7-F
Diodes Incorporated
-
BAT54C-7-F
Diodes Incorporated
-
BAV99,215
Nexperia USA Inc.
-
BAT54SLT1G
onsemi
-
BAV70LT1G
onsemi
-
BAT54CLT1G
onsemi
-
BAT54S-7-F
Diodes Incorporated
-
BAV99LT1G
onsemi
-
BAT54S,215
Nexperia USA Inc.
-
BAS40-04LT1G
onsemi
-
MMBD1503-TP
Micro Commercial Co
-
BAV99WT1G
onsemi
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