Diodes Incorporated BAW156-F

Overview

BAW156-F from Diodes Incorporated is a dual low-leakage silicon switching diode in SOT23 package, configured as two independent anode-cathode junctions sharing a common cathode (dual common-cathode configuration), with 85 V peak reverse voltage, 140 mA double-diode forward current rating, and 5 nA leakage at 75 V, used in precision signal clamping and high-impedance bias networks in industrial sensor interfaces.

For engineers reviewing the BAW156-F datasheet, BAW156-F pinout, BAW156-F application, or BAW156-F equivalent, key selection criteria include verified low IR (≤5 nA @ 75 V), fast trr (≤3.0 µs), dual-element integration in SOT23, and AEC-Q101 qualification of automotive-grade variant BAW156Q-F.

Technical Context

The BAW156-F implements two monolithically integrated PN junction diodes in a single SOT23-3 package with shared cathode terminal (Pin 3), enabling compact dual-clamp or dual-bias functions without discrete pairing. Its design targets low-current analog signal conditioning where leakage-induced offset error must be minimized.

Thermal performance is defined by RθJA = 500 °C/W on FR-4 board with recommended pad layout, and power derating begins linearly above +25°C ambient, reaching zero dissipation at +150°C. Junction temperature range spans –55°C to +150°C, supporting extended industrial and automotive under-hood environments.

Key Specifications

Pinout & Package

Package: SOT23-3, surface-mount plastic molded case (UL 94V-0), 0.008 g mass, moisture sensitivity level 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual low-leakage diode applications.

Compared with BAV99W-7-F and DMT3016LSD-7, the BAW156-F uniquely delivers sub-10 nA leakage in a dual common-cathode SOT23 configuration with automotive-grade qualification available-making it irreplaceable in precision analog biasing where leakage-induced error budgets are <1 µV.

Availability

BAW156-F is available at Aetrix Electronics and suitable for industrial sensor interfaces, automotive cabin sensing modules, medical patient monitoring front-ends, and programmable logic controller input protection requiring stable component supply and long-term manufacturability.

Supply support for BAW156-F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, testing, and wafer fabrication facilities across Asia and the U.S.

The BAW156-F belongs to Diodes' general-purpose switching diode product line, engineered specifically for space-constrained, low-leakage analog signal conditioning in industrial and automotive systems where precision bias stability and transient robustness are co-required.

FAQ

What is the pin configuration and polarity marking for BAW156-F?

The BAW156-F uses SOT23-3 package with Pin 1 = Anode 1, Pin 2 = Anode 2, Pin 3 = Common Cathode. Polarity is marked on the top surface with a cathode band adjacent to Pin 3, and "K53" product code identifies the device type per Diodes' marking standard.

Is BAW156-F suitable for automotive applications?

The BAW156-F itself is not AEC-Q101 qualified; however, its automotive-grade variant BAW156Q-F is fully AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949-certified facilities-making it appropriate for body electronics, climate control sensors, and infotainment system interfaces.

How does BAW156-F perform at elevated temperatures?

At +150°C junction temperature, leakage increases to 80 nA at 75 V (vs. 5 nA at +25°C), and VF drops to ~0.85 V at 10 mA. Power derating follows a linear curve from 250 mW at +25°C to 0 mW at +150°C, requiring thermal-aware layout for sustained high-temp operation.

Can BAW156-F replace two separate 1N4148 diodes?

No-BAW156-F is a dual common-cathode device (Anode1–Cathode, Anode2–Cathode), whereas two 1N4148s offer fully independent anode–cathode pairs. It replaces them only in topologies requiring shared cathode routing, such as dual-rail clamping or split-bias generation, not general-purpose discrete substitution.