Diodes Incorporated BAW156Q-7-F

Overview

BAW156Q-7-F from Diodes Incorporated is a dual low-leakage silicon switching diode in SOT23 package, rated for 85 V peak reverse voltage, 160 mA forward current per diode, and 3.0 µs reverse recovery time. It delivers <5 nA leakage at 75 V and 25°C, supports automotive AEC-Q101 qualification, and is used in precision signal clamping and high-impedance bias networks in engine control units.

For engineers reviewing the BAW156Q-7-F datasheet, BAW156Q-7-F pinout, BAW156Q-7-F application, or BAW156Q-7-F equivalent, key selection criteria include leakage current at elevated temperature, reverse recovery behavior under fast-switching conditions, dual-diode configuration for matched characteristics, and AEC-Q101 compliance for automotive-grade reliability validation.

Technical Context

The BAW156Q-7-F integrates two independent, monolithically matched silicon PN junction diodes in a single SOT23-3 package with common cathode connection confirmed by internal schematic and top-view marking. Its low 3 pF total capacitance at 0 V and sub-3 µs trr enable use in RF detector and sample-hold circuits where charge injection and timing skew must be minimized.

Designed for high-temperature operation up to +150°C, it maintains ≤80 nA leakage at VR = 75 V and TJ = +150°C - critical for battery-monitoring front-ends and sensor signal conditioning in under-hood automotive modules where thermal drift directly impacts measurement accuracy.

Key Specifications

Pinout & Package

Package: SOT23-3, surface-mount plastic package with matte tin-plated Alloy 42 leadframe, UL 94V-0 rated molding compound, and moisture sensitivity level 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual low-leakage diode applications.

Compared with BAV99W-7-F and MMBD7000LT1G, the BAW156Q-7-F uniquely combines AEC-Q101 qualification, 85 V blocking, and <5 nA leakage - making it the only option among the three suitable for precision automotive sensor biasing requiring long-term thermal stability and zero-defect traceability.

Availability

BAW156Q-7-F is available at Aetrix Electronics and suitable for automotive engine control units, battery management systems, and industrial sensor interfaces requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for BAW156Q-7-F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The BAW156Q-7-F belongs to Diodes' automotive-qualified discrete diode product line, engineered specifically for high-reliability signal conditioning, clamping, and protection in safety-critical vehicle subsystems.

FAQ

What is the polarity configuration of the BAW156Q-7-F?

The BAW156Q-7-F uses a common-cathode configuration: Pin 1 is Anode 1, Pin 2 is the shared Cathode, and Pin 3 is Anode 2. This is confirmed by the internal schematic in DS30231 Rev. 11–2, Figure on page 2, and verified via top-view marking "K53" orientation on the SOT23 package.

Is the BAW156Q-7-F suitable for 48 V mild-hybrid automotive systems?

No - its 85 V VRRM provides insufficient margin against ISO 16750-2 load dump transients (up to 110 V in 48 V systems). It is rated for 12 V and 24 V architectures only. For 48 V applications, Diodes recommends the BAW56Q-7-F (100 V VRRM) or BAV70Q-7-F (100 V VRRM), both AEC-Q101 qualified.

Does the BAW156Q-7-F require derating at elevated ambient temperatures?

Yes - its 250 mW power dissipation is specified at TA = +25°C. Derating follows the curve in Figure 1: at +100°C ambient, maximum PD drops to 125 mW. Designers must calculate worst-case IF × VF and ensure junction temperature remains ≤+150°C using RθJA = 500°C/W and appropriate PCB copper area.

How does the leakage current change at −40°C?

Leakage decreases significantly at low temperature: IR drops to <0.1 nA at VR = 75 V and TA = −40°C, per extrapolation from Figure 3's −55°C curve. This improves DC accuracy in cold-start engine control applications but does not affect switching performance, as trr increases only marginally below 0°C.