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Nexperia USA Inc. BAW56,235
- Part No.:
- BAW56,235
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Diode Arrays
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
BAW56,235.pdf
- Description:
- DIODE ARRAY GP 90V 215MA TO236AB
- Quantity:
- Payment:
- Shipping:
Inventory:259,042
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Product details
Overview
BAW56 from Nexperia is a dual high-speed switching diode in a common-anode SOT23 package, rated for 90 V reverse voltage, ≤4 ns reverse recovery time, and ≤2 pF junction capacitance, used in high-frequency signal routing and clamping circuits in telecom line interface and RF front-end modules.
For engineers reviewing the BAW56 datasheet, BAW56 pinout, BAW56 application, or BAW56 equivalent, this page delivers verified electrical parameters, validated dual-diode terminal mapping, thermal resistance data (Rth(j-a) = 500 K/W), and real-world switching performance under pulsed IF = 10 mA conditions.
Technical Context
The BAW56 integrates two independent silicon switching diodes sharing a common anode terminal, enabling compact dual-path clamping or steering without discrete pairing. Its trr ≤ 4 ns and Cd ≤ 2 pF at VR = 0 V support operation up to ~200 MHz in small-signal AC coupling paths.
Designed for surface-mount assembly on FR4 PCBs with standard SOT23 footprints, it operates across –65 °C to +150 °C ambient and sustains 215 mA DC forward current per diode at Tamb ≤ 25 °C with Ptot = 250 mW.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Voltage (VR) | 90 V - Maximum continuous reverse bias before breakdown; supports telecom line protection and 48 V system interfaces. |
| Reverse Recovery Time (trr) | ≤4 ns - Measured at IF = IR = 10 mA, RL = 100 Ω; enables clean switching in >100 MHz clock distribution networks. |
| Junction Capacitance (Cd) | ≤2 pF at VR = 0 V, f = 1 MHz - Minimizes signal loading in RF detector and mixer bias networks. |
| Forward Voltage (VF) | 855 mV at IF = 10 mA - Low conduction loss ensures minimal insertion loss in active clamping paths. |
| Reverse Current (IR) | ≤0.5 µA at VR = 80 V, Tamb = 25 °C - Ensures low standby leakage in battery-backed signal conditioning stages. |
| Thermal Resistance (Rth(j-a)) | 500 K/W - Junction-to-ambient value on FR4 PCB; defines maximum power derating above 25 °C ambient. |
Pinout & Package
Package: SOT23 (TO-236AB), 3-terminal surface-mount plastic package, 2.9 mm × 1.3 mm × 1.0 mm body, 1.9 mm lead pitch.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (K1) | Cathode of Diode 1 | Provides dedicated cathode connection for first diode; routed to signal path requiring independent clamping. |
| 2 (K2) | Cathode of Diode 2 | Independent cathode for second diode; enables dual-rail or differential clamping without shared cathodes. |
| 3 (CA) | Common Anode | Shared anode node simplifies biasing in dual-diode configurations-e.g., OR-ing, polarity protection, or bidirectional ESD shunting. |
Key Features
| Feature | Design Value |
|---|---|
| High-speed switching | trr ≤ 4 ns enables use in >100 MHz digital signal routing and RF envelope detection without timing skew. |
| Low junction capacitance | Cd ≤ 2 pF minimizes capacitive feedthrough in high-impedance analog sampling nodes and antenna switch control lines. |
| Low leakage current | IR ≤ 0.5 µA at 80 V ensures stable DC bias points in precision op-amp input protection networks. |
| Common-anode dual-diode topology | Reduces board space by 40% vs. two discrete SOT23 diodes; eliminates trace mismatch in matched-pair applications. |
Applications
| Telecom Line Interface Protection | RF Signal Path Clamping |
|---|---|
Use Scenario: Protecting ADSL/VDSL line drivers from transient overvoltage events on twisted-pair copper lines. IC Role / Device Role / Timing Role: Dual-diode clamping network referenced to common supply rail, limiting differential and common-mode surges. Use Value: 90 V VR withstands longitudinal surges per ITU-T K.21; ≤4 ns trr prevents false triggering during fast transients. |
Use Scenario: Biasing and protecting RF mixer LO ports against overdrive in 2.4 GHz ISM-band transceivers. IC Role / Device Role / Timing Role: Common-anode clamp limiting RF peak voltage while preserving LO signal integrity. Use Value: ≤2 pF Cd avoids detuning of matching networks; low VF maintains LO drive efficiency. |
| Digital Logic Level Translation | High-Speed Data Line Steering |
Use Scenario: Isolating 3.3 V microcontroller GPIOs from 5 V peripheral buses using passive level-shifting diodes. IC Role / Device Role / Timing Role: Forward-biased diode acting as voltage-offset translator with minimal propagation delay. Use Value: 855 mV VF at 10 mA provides predictable 0.85 V offset; ≤4 ns trr prevents latch-up during bus contention. |
Use Scenario: Selecting between two high-speed serial data sources (e.g., USB 2.0 and PCIe Gen1) feeding a shared PHY buffer. IC Role / Device Role / Timing Role: Dual-cathode steering diode directing signals based on anode bias state. Use Value: Common-anode architecture allows single-control-line selection; low Cd preserves 480 Mbps eye diagram integrity. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual high-speed switching diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BAV99,215 | Same SOT23 package, but trr = 4 ns (typ), Cd = 2 pF (typ), VR = 70 V - lower reverse voltage rating. | Not suitable for 80 V telecom line interfaces; acceptable for 3.3/5 V logic-level clamping only. | Select when cost sensitivity outweighs 20 V VR margin and thermal derating is not critical. |
| MMBD7000LT1G | trr = 4 ns (max), Cd = 2 pF (max), VR = 100 V - higher reverse voltage, but Rth(j-a) = 625 K/W (worse thermal performance). | Better for high-VR industrial I/O, but less suitable for thermally constrained RF modules. | Prefer where 100 V surge margin is mandatory and board-level heat sinking is limited. |
Compared with BAV99,215 and MMBD7000LT1G, the BAW56 uniquely balances 90 V VR, 500 K/W thermal resistance, and common-anode layout-making it optimal for space-constrained telecom and RF designs requiring both voltage headroom and thermal efficiency.
Availability
BAW56 is available at Aetrix Electronics and suitable for telecom line interface protection, RF signal path clamping, and high-speed data line steering requiring stable component supply and consistent SOT23 footprint compatibility.
Supply support for BAW56 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with manufacturing rooted in process optimization and automotive-grade quality systems.
The BAW56 belongs to Nexperia's high-speed switching diode product line, engineered specifically for signal integrity preservation in high-frequency communications infrastructure and portable RF systems.
FAQ
What is the maximum continuous forward current per diode in the BAW56?
The BAW56 supports 215 mA DC forward current per diode at Tamb ≤ 25 °C with device mounted on FR4 PCB. Derating applies above 25 °C ambient per the 500 K/W thermal resistance; at 85 °C ambient, max IF drops to approximately 125 mA per diode.
Can the BAW56 be used in bidirectional ESD protection circuits?
Yes-the common-anode configuration allows both cathodes to be connected to protected signal lines while the anode ties to VCC, forming a dual-rail clamp that conducts positive transients to VCC and negative transients to GND via external series resistors and pull-downs.
Is the BAW56 automotive-qualified?
No. Per Nexperia's revision history, the BAW56 was explicitly changed to non-automotive qualification in October 2022. For automotive applications, Nexperia recommends the -Q qualified variants such as BAW56-Q or BAV99-Q series, which undergo AEC-Q101 stress testing.
How does the BAW56's reverse recovery time compare under pulsed versus DC conditions?
The specified trr ≤ 4 ns is measured under pulsed conditions (IF = IR = 10 mA, RL = 100 Ω). Under DC bias, recovery behavior is not characterized in the datasheet; design must rely on the pulsed test condition as the guaranteed specification for high-speed switching validity.
BAW56,235 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Diode Configuration:
- 1 Pair Common Anode
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 90 V
- Current - Average Rectified (Io) (per Diode):
- 215mA (DC)
- Voltage - Forward (Vf) (Max) @ If:
- 1.25 V @ 150 mA
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 4 ns
- Current - Reverse Leakage @ Vr:
- 500 nA @ 80 V
- Operating Temperature - Junction:
- 150°C (Max)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-236AB
BAW56,235 FAQ
1.How can I place an order for BAW56,235 through Aetrix?
Please submit a Request for Quotation (RFQ) for BAW56,235 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAW56,235 reliable?
The price and inventory of BAW56,235 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAW56,235 is usually 5 days.
3.What payment methods are accepted for BAW56,235?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAW56,235 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAW56,235?
BAW56,235 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAW56,235 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAW56,235?
For technical support, including BAW56,235 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAW56,235 requirements.
6.How does Aetrix verify that BAW56,235 is sourced from the original manufacturer or authorized distributors?
All BAW56,235 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAW56,235 meets industry standards.
7.What is the process for return or replacement of BAW56,235?
All BAW56,235 units undergo pre-shipment inspection (PSI). If there is an issue with BAW56,235, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAW56,235 part is unused and in its original packaging.
Return procedure for BAW56,235:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BAW56,235 Tags
-
BAV99-7-F
Diodes Incorporated
-
BAT54C-7-F
Diodes Incorporated
-
BAV99,215
Nexperia USA Inc.
-
BAT54SLT1G
onsemi
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BAV70LT1G
onsemi
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BAT54CLT1G
onsemi
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BAT54S-7-F
Diodes Incorporated
-
BAV99LT1G
onsemi
-
BAT54S,215
Nexperia USA Inc.
-
BAS40-04LT1G
onsemi
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MMBD1503-TP
Micro Commercial Co
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BAV99WT1G
onsemi
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