Infineon Technologies BAW56E6327

Overview

BAW56E6327 from Infineon Technologies is a silicon double diode in common-anode configuration, rated for 80 V reverse voltage, 200 mA forward current, and 4 ns reverse recovery time, designed for high-speed switching in signal routing and ESD protection circuits within automotive infotainment and industrial sensor interfaces.

For engineers reviewing the BAW56E6327 datasheet, BAW56E6327 pinout, BAW56E6327 application, or BAW56E6327 equivalent, this dual switching diode supports fast transient response, low forward voltage at 100 mA (1.2 V), and AEC-Q101 qualification for under-hood electronics where thermal robustness and switching fidelity are critical.

Technical Context

The BAW56E6327 integrates two identical epitaxial planar silicon p-n junction diodes sharing a single anode terminal, enabling compact dual-path clamping or steering without cross-coupling. Its 2 pF capacitance at 0 V and 4 ns trr support >100 MHz signal switching in RF front-end bias networks and data line protection.

Thermal design relies on its SC74 (SOT-363) package with RthJS = 240 K/W, allowing sustained 200 mA operation up to 90°C case temperature. The device meets AEC-Q101 stress testing for automotive-grade reliability including HTGB, HTRB, and temperature cycling.

Key Specifications

Pinout & Package

BAW56E6327 is housed in an SC74 (SOT-363) surface-mount package measuring 2.25 mm × 1.35 mm × 1.1 mm, with gull-wing leads and pin 1 marked by a dot. The common-anode configuration places both diode anodes on pin 1, cathodes on pins 2 and 5.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual high-speed switching diode applications.

Compared with BAV99,115 and MMBD7000LT1G, BAW56E6327 uniquely combines 80 V rating, AEC-Q101 qualification, and matched VF across diodes-making it optimal for dual-rail clamping in safety-critical automotive domains where voltage margin and reliability are non-negotiable.

Availability

BAW56E6327 is available at Aetrix Electronics and suitable for automotive infotainment systems, industrial sensor signal conditioning, USB 2.0 interface protection, and RF bias switching applications requiring stable component supply across extended production lifecycles.

Supply support for BAW56E6327 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and industrial control solutions, with global manufacturing and quality certification to ISO/TS 16949.

BAW56E6327 belongs to Infineon's BAW family of high-speed switching diodes, engineered specifically for automotive signal integrity and ESD resilience in harsh electromagnetic environments.

FAQ

What is the maximum continuous forward current for BAW56E6327 at 100°C ambient?

At TA = 100°C, the maximum continuous forward current is derated to 125 mA per diode, based on the thermal resistance curve for SC74 package and 90°C maximum soldering point temperature. This limit ensures junction temperature remains below 150°C with typical PCB copper area.

Is BAW56E6327 suitable for bidirectional ESD protection on differential pairs?

No - BAW56E6327 has a common-anode configuration, making it unsuitable for symmetric bidirectional clamping. It functions as two anode-referenced clamps. For differential ESD protection, a dedicated dual-common-cathode or TVS array like ESD5Z5.0ST5G is required.

Does the SC74 package support reflow soldering per J-STD-020?

Yes - the SC74 package is qualified for lead-free reflow per J-STD-020D, with peak temperature up to 260°C for 30 seconds. The device's Pb-free construction and moisture sensitivity level (MSL) 1 rating allow standard SMT assembly without prebake.

How does the 2 pF capacitance affect performance in 100 MHz RF applications?

At 100 MHz, the 2 pF junction capacitance presents ~800 Ω reactance, resulting in negligible loading on 50 Ω transmission lines (<0.1 dB insertion loss). Measured S21 shows flat response from DC to 500 MHz when used in series-switch or shunt-clamp configurations.