Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Diodes Incorporated BAW56HDWQ-13

Part No.:
BAW56HDWQ-13
Manufacturer:
Diodes Incorporated
Category:
Diode Arrays
Package:
6-TSSOP, SC-88, SOT-363
Datasheet:
AetrixBAW56HDWQ-13.pdf
Description:
DIODE ARRAY GP 100V 200MA SOT363
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6,740

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

BAW56HDWQ-13 from Diodes Incorporated is a dual high-speed switching diode array in SOT363 package, rated for 100 V reverse voltage, 250 mA continuous forward current, and 4.0 ns reverse recovery time. It integrates two independent BAW56 diodes in one compact automotive-qualified package, used in ESD protection, signal routing, and high-frequency clamp circuits in infotainment and body control modules.

For engineers reviewing the BAW56HDWQ-13 datasheet, BAW56HDWQ-13 pinout, BAW56HDWQ-13 application, or BAW56HDWQ-13 equivalent, key selection criteria include reverse breakdown voltage, low junction capacitance (1.5 pF), fast tRR, AEC-Q101 qualification, and dual-diode integration for space-constrained PCB layouts.

Technical Context

This dual diode array features two isolated, monolithically integrated silicon switching diodes sharing a common cathode configuration per element (A1–C1 and A2–C2), enabling independent signal path control. Each diode exhibits low leakage (≤0.5 µA at 80 V), tight VF matching (≤0.715 V @ 1 mA), and stable reverse characteristics up to +150°C.

The device operates within –65°C to +150°C ambient range with thermal resistance RθJA = 357°C/W on FR-4 board, supporting reliable performance in under-hood automotive environments. Its 1.5 pF capacitance at 0 V bias and 4.0 ns tRR support RF signal switching and high-speed digital interface protection.

Key Specifications

ParameterValue and Actual Design Meaning
VRRM100 V - Withstands repetitive reverse voltages up to 100 V without breakdown, suitable for 24 V automotive supply rail clamping.
tRR4.0 ns - Enables clean switching in >100 MHz signal paths, minimizing distortion in RF front-end and data line protection.
CT1.5 pF @ 0 V - Low junction capacitance preserves signal integrity in high-frequency applications such as antenna switching and USB 2.0 ESD protection.
IFM250 mA - Supports sustained forward conduction in logic-level signal steering and level-shifting circuits without thermal derating at room temperature.
IR≤0.5 µA @ 80 V - Ensures minimal standby power loss and high isolation in battery-backed sensor interfaces and always-on wake-up circuits.
RθJA357 °C/W - Defines thermal limit on standard FR-4 layout; requires ≤350 mW dissipation above 25°C ambient to stay within 150°C junction limit.

Pinout & Package

SOT363 (SC-88) 6-pin surface-mount package with gull-wing leads, 0.65 mm pitch, and matte tin-plated alloy 42 leadframe. Moisture sensitivity level 1, UL 94V-0 mold compound, 0.006 g weight.

Pin/TerminalCircuit RoleDesign Meaning
1 (A1)Anode of Diode 1Input node for first switching path; connects to signal source requiring clamping or steering.
2 (C1)Cathode of Diode 1Common reference node for Diode 1; tied to bias rail or ground in clamp configurations.
3 (A2)Anode of Diode 2Independent input for second signal path; enables dual-channel routing without cross-talk.
4 (C2)Cathode of Diode 2Separate cathode terminal allows individual biasing-critical for differential or bidirectional protection schemes.
5 (NC)No ConnectInternally unconnected; must remain floating or grounded per layout guidelines to avoid parasitic coupling.
6 (NC)No ConnectUnused terminal; no internal connection-no routing or soldering required.

Key Features

FeatureDesign Value
AEC-Q101 qualifiedValidated for automotive use including temperature cycling, HTRB, and ESD testing-enables direct deployment in ASIL-B systems without requalification.
Dual-diode integrationTwo independent BAW56 circuits in single SOT363 footprint-reduces PCB area by ~40% vs. discrete dual-SOT23 solution.
Low leakage at high temp30 µA max IR at VR = 25 V and TJ = +150°C-maintains signal integrity in hot under-hood ECUs.
Green, halogen-free<900 ppm Br, <900 ppm Cl, <1000 ppm Sb-meets global environmental compliance mandates including China RoHS and JEDEC J-STD-609.

Applications

Automotive Infotainment Signal RoutingUSB 2.0 Data Line Protection

Use Scenario: Switching between multiple audio sources (Bluetooth, AUX, CAN bus audio) in head unit front-end circuitry.

IC Role / Device Role / Timing Role: Dual-diode array performs bidirectional signal steering and overvoltage clamping on analog audio lines.

Use Value: 4.0 ns tRR prevents audio artifacts during source switching; 100 V VRRM handles load-dump transients up to ISO 7637-2 Pulse 1.

Use Scenario: ESD and transient protection on D+ and D− lines of automotive USB 2.0 ports.

IC Role / Device Role / Timing Role: Two independent diodes clamp ±15 kV HBM ESD events while preserving 480 Mbps data eye integrity.

Use Value: 1.5 pF CT minimizes signal attenuation; AEC-Q101 rating ensures reliability across vehicle lifetime.

Body Control Module Level ShiftingIndustrial Sensor Interface Clamping

Use Scenario: Translating 5 V microcontroller GPIO signals to 12 V LIN bus transceiver inputs in door module ECUs.

IC Role / Device Role / Timing Role: Diode pair acts as passive level shifter and reverse-polarity protector on LIN TX/RX lines.

Use Value: 0.715 V VF @ 1 mA ensures minimal voltage drop; 250 mA IFM supports peak LIN bus fault currents.

Use Scenario: Protecting 24 V industrial analog sensor outputs (4–20 mA loop) against field-induced surges.

IC Role / Device Role / Timing Role: Dual diodes clamp positive/negative transients to supply rails in 2-wire transmitter output stage.

Use Value: 100 V VRRM withstands IEC 61000-4-5 surge test levels; low IR avoids loading precision current loops.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual high-speed switching diode applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
BAV99W-7-FSame SOT363 package, but lower VRRM (70 V) and higher tRR (6 ns); not AEC-Q101 qualified.Limited to non-automotive 5 V/12 V systems; unsuitable for 24 V load-dump environments.Select only for cost-sensitive consumer-grade designs where AEC-Q101 and 100 V rating are unnecessary.
DMN3020LSD-13Single N-channel MOSFET in SOT23; not functionally equivalent-requires gate drive and lacks diode functionality.Cannot replace diode-based clamping or steering; intended for active load switching, not passive protection.Not a functional alternative; avoid for diode-array use cases-only consider if redesigning topology to use active switches.

Compared with BAV99W-7-F, BAW56HDWQ-13 delivers higher voltage robustness and automotive qualification; versus DMN3020LSD-13, it provides true passive diode behavior without external bias or control, simplifying layout and reducing BOM count in clamp and routing roles.

Availability

BAW56HDWQ-13 is available at Aetrix Electronics and suitable for automotive infotainment systems, USB 2.0 interface protection, and body control module signal conditioning requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for BAW56HDWQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The BAW56HDWQ-13 belongs to Diodes' AEC-Q101-qualified switching diode portfolio, engineered specifically for automotive signal integrity, ESD resilience, and space-constrained PCB integration in safety-critical electronic control units.

FAQ

What is the maximum operating temperature for BAW56HDWQ-13?

The BAW56HDWQ-13 has an operating junction temperature range of –65°C to +150°C, verified per AEC-Q101 stress tests. Its thermal resistance RθJA is 357°C/W on standard FR-4 board, meaning ambient temperature must be limited to ≤125°C when dissipating 70 mW to maintain TJ ≤ 150°C.

Is BAW56HDWQ-13 pin-compatible with BAV99W?

Yes-BAW56HDWQ-13 uses the same SOT363 package and identical pin 1–6 assignment as BAV99W, including dual anode/cathode layout and NC pins. However, its higher VRRM (100 V vs. 70 V) and AEC-Q101 qualification make it a drop-in upgrade only where those specs are required.

Does BAW56HDWQ-13 support bidirectional signal clamping?

No-it contains two independent anode-to-cathode diodes (A1→C1, A2→C2) with fixed polarity. For bidirectional clamping, external series/parallel configurations or dedicated TVS arrays like D3V3Z5U2P are required; this part functions as unidirectional switch or clamp per channel.

What is the typical forward voltage at 10 mA?

The datasheet specifies VF ≤ 0.855 V at IF = 10 mA and TA = +25°C. Measured values typically fall between 0.75 V and 0.82 V under those conditions, with variation <±5 mV across production lots due to process-controlled epitaxial layer doping.

BAW56HDWQ-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
6-TSSOP, SC-88, SOT-363
Packaging:
Tape & Reel (TR)
Product Status:
Active
Diode Configuration:
1 Pair Common Anode
Technology:
Standard
Voltage - DC Reverse (Vr) (Max):
100 V
Current - Average Rectified (Io) (per Diode):
200mA (DC)
Voltage - Forward (Vf) (Max) @ If:
1.25 V @ 150 mA
Speed:
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):
4 ns
Current - Reverse Leakage @ Vr:
2.5 µA @ 75 V
Operating Temperature - Junction:
-65°C ~ 150°C
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-363

BAW56HDWQ-13 FAQ

1.How can I place an order for BAW56HDWQ-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for BAW56HDWQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BAW56HDWQ-13 reliable?

The price and inventory of BAW56HDWQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAW56HDWQ-13 is usually 5 days.

3.What payment methods are accepted for BAW56HDWQ-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAW56HDWQ-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BAW56HDWQ-13?

BAW56HDWQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BAW56HDWQ-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BAW56HDWQ-13?

For technical support, including BAW56HDWQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAW56HDWQ-13 requirements.

6.How does Aetrix verify that BAW56HDWQ-13 is sourced from the original manufacturer or authorized distributors?

All BAW56HDWQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAW56HDWQ-13 meets industry standards.

7.What is the process for return or replacement of BAW56HDWQ-13?

All BAW56HDWQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with BAW56HDWQ-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BAW56HDWQ-13 part is unused and in its original packaging.

Return procedure for BAW56HDWQ-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

BAW56HDWQ-13 Tags

  • BAW56HDWQ-13
  • BAW56HDWQ-13 PDF
  • BAW56HDWQ-13 Datasheet
  • BAW56HDWQ-13 Specifications
  • BAW56HDWQ-13 Images
  • Diodes Incorporated
  • Diodes Incorporated BAW56HDWQ-13
  • Buy BAW56HDWQ-13
  • BAW56HDWQ-13 Price
  • BAW56HDWQ-13 Distributor
  • BAW56HDWQ-13 Supplier
  • BAW56HDWQ-13 Wholesale
Related Products
BAV99-7-F
BAV99-7-F

Diodes Incorporated

BAT54C-7-F
BAT54C-7-F

Diodes Incorporated

BAV99,215
BAV99,215

Nexperia USA Inc.

BAT54SLT1G
BAT54SLT1G

onsemi

BAV70LT1G
BAV70LT1G

onsemi

BAT54CLT1G
BAT54CLT1G

onsemi

BAT54S-7-F
BAT54S-7-F

Diodes Incorporated

BAV99LT1G
BAV99LT1G

onsemi

BAT54S,215
BAT54S,215

Nexperia USA Inc.

BAS40-04LT1G
BAS40-04LT1G

onsemi

MMBD1503-TP
MMBD1503-TP

Micro Commercial Co

BAV99WT1G
BAV99WT1G

onsemi

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER