Nexperia USA Inc. BAW56QAZ
- Part No.:
- BAW56QAZ
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Diode Arrays
- Package:
- 3-XDFN Exposed Pad
- Datasheet:
-
BAW56QAZ.pdf
- Description:
- DIODE ARR GP 90V 180MA DFN1010D3
- Quantity:
- Payment:

- Shipping:

Inventory:1,578
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Product details
Overview
BAW56QA from Nexperia is a dual common-anode high-speed switching diode in a DFN1010D-3 (SOT1215) package, designed for space-constrained automotive and industrial signal routing. It delivers trr ≤ 4 ns reverse recovery time, VR = 90 V maximum reverse voltage, and IF = 310 mA per diode at 25 °C - enabling fast edge transitions in digital logic interfaces and power rail clamping.
For engineers reviewing the BAW56QA datasheet, BAW56QA pinout, BAW56QA application, or BAW56QA equivalent, this device is selected for high-frequency switching nodes where low capacitance (Cd ≤ 2 pF), AEC-Q101 qualification, and ultra-thin 0.37 mm profile are critical to PCB stack-up and EMI performance in ADAS sensor modules and motor control feedback paths.
Technical Context
The BAW56QA integrates two independent silicon switching diodes sharing a single anode terminal, forming a compact dual-diode configuration optimized for bidirectional signal steering or redundant path selection. Its junction design achieves trr ≤ 4 ns under IF = 10 mA / IR = 10 mA test conditions with RL = 100 Ω, supporting >100 MHz digital signal integrity in level-shifting circuits.
Thermal performance is defined by Rth(j-a) = 385 K/W on standard FR4 and Rth(j-sp) = 230 K/W with enhanced cathode pad layout, allowing sustained operation up to Tj = 150 °C. The device's low VF = 1.25 V at IF = 150 mA and IR ≤ 0.5 µA at VR = 80 V ensures minimal conduction loss and leakage in always-on bias networks.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Voltage (VR) | 90 V - supports 24 V and 48 V automotive supply rail clamping without breakdown |
| Reverse Recovery Time (trr) | ≤ 4 ns - enables clean switching in >100 MHz clock distribution and data line steering |
| Forward Voltage (VF) | 1.25 V @ 150 mA - limits I²R loss in high-duty-cycle bias networks |
| Diode Capacitance (Cd) | ≤ 2 pF @ 0 V - preserves signal rise/fall times in high-speed GPIO and UART lines |
| Leakage Current (IR) | ≤ 0.5 µA @ 80 V - maintains stable reference node integrity in precision analog front-ends |
| Junction Temperature (Tj) | 150 °C max - qualified for under-hood automotive environments per AEC-Q101 |
| Package Height | 0.37 mm - fits beneath 0.4 mm board-to-board connectors and thin-film shields |
Pinout & Package
BAW56QA uses the DFN1010D-3 (SOT1215) leadless plastic package: 1.1 × 1.0 × 0.37 mm body with visible and solderable side pads, optimized for AOI-compatible reflow assembly and thermal dissipation via cathode pads.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (K1) | Cathode of Diode 1 | Provides dedicated return path for first switching channel; routed separately to avoid crosstalk |
| 2 (K2) | Cathode of Diode 2 | Enables independent current control per channel while sharing common anode bias |
| 3 & 4 (CA) | Common Anode | Single input node for dual-path selection; requires low-inductance connection to supply or reference |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive applications including engine control units and infotainment power sequencing |
| Ultra-low trr ≤ 4 ns | Reduces switching-induced glitches in CAN FD and LIN bus protection circuits |
| 0.37 mm package height | Enables placement beneath stacked FPC connectors in compact ADAS camera modules |
| 2 pF capacitance | Maintains >500 MHz signal bandwidth in RF detector and envelope tracking paths |
| AOI-solder joint compatible | Supports automated optical inspection without X-ray for production traceability in Tier-1 manufacturing |
Applications
| Automotive CAN Bus Protection | High-Speed Logic Level Translation |
|---|---|
Use Scenario: Bidirectional transient suppression on CAN_H/CAN_L lines in 12 V vehicle networks. IC Role / Device Role / Timing Role: Dual-diode clamp referenced to common anode tied to VCC, absorbing ±80 V ESD pulses while preserving signal edge fidelity. Use Value: trr ≤ 4 ns prevents pulse distortion during ISO 10605 30 kV contact discharge events, maintaining bit error rate <10⁻¹². |
Use Scenario: 3.3 V ↔ 5 V GPIO translation between microcontroller and legacy peripherals. IC Role / Device Role / Timing Role: Common-anode dual diode used in passive clamping topology with pull-up resistors on both sides. Use Value: Cd ≤ 2 pF ensures <100 ps added propagation delay across 20 MHz SPI clock lines. |
| Motor Control Feedback Clamping | Power Supply OR'ing Circuit |
Use Scenario: Overvoltage protection for Hall-effect sensor outputs in BLDC motor controllers. IC Role / Device Role / Timing Role: Cathode-connected sensor output routed through K1/K2 to shared CA tied to 5 V rail, limiting excursion to VF + 5 V. Use Value: VF = 1.25 V @ 150 mA guarantees <10 mV offset error in 12-bit position sensing ADC inputs. |
Use Scenario: Redundant 12 V input selection in telematics gateway power architecture. IC Role / Device Role / Timing Role: Two diodes configured as ideal OR gate with common anode feeding system rail and separate cathodes on each input. Use Value: IF = 310 mA per diode supports 600 mA total load with <150 mV forward drop at full rating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual common-anode high-speed switching diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BAV99W | Higher trr = 4–6 ns typ; larger SOT323 package (1.7 × 1.3 × 0.95 mm); VF = 1.25 V @ 100 mA | Not AEC-Q101 qualified; unsuitable for under-hood deployment | Select when board space allows larger footprint and automotive qualification is not required |
| PMEG3010CPA | Single Schottky diode; lower VF = 0.35 V @ 1 A; no dual configuration; SOD123 package | Lacks common-anode dual structure; cannot replace BAW56QA in bidirectional clamping | Choose only for unidirectional, high-current rectification where low VF dominates over speed |
Compared with BAV99W and PMEG3010CPA, BAW56QA uniquely combines AEC-Q101 compliance, 0.37 mm height, and true dual-common-anode topology - making it irreplaceable in space-limited automotive signal conditioning where simultaneous high-speed clamping on two paths is required.
Availability
BAW56QA is available at Aetrix Electronics and suitable for automotive CAN bus protection, high-speed logic level translation, and motor control feedback clamping requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for BAW56QA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert delivering high-performance, reliable discrete, logic, and MOSFET devices with focus on efficiency, reliability, and miniaturization for automotive, industrial, and consumer markets.
BAW56QA belongs to Nexperia's AEC-Q101-qualified high-speed switching diode product line, engineered specifically for signal integrity preservation in automotive networking and power management subsystems where speed, size, and qualification are non-negotiable.
FAQ
Is BAW56QA suitable for bidirectional ESD protection on differential pairs?
Yes - its dual common-anode structure allows symmetric clamping of both lines to a shared reference (e.g., 3.3 V or 5 V rail) with matched trr ≤ 4 ns and Cd ≤ 2 pF, ensuring balanced transient response and minimal skew in USB 2.0 or RS-485 interfaces.
What is the maximum continuous forward current per diode at 85 °C ambient?
Per the derating curve (Figure 2), the maximum continuous forward current per diode drops to approximately 220 mA at Tamb = 85 °C on standard FR4 PCB, based on linear interpolation from 310 mA at 25 °C and 0 mA at 150 °C junction limit.
Can BAW56QA be used in place of a single discrete diode in a simple rectifier circuit?
No - BAW56QA is a dual-diode device with shared anode; using only one cathode ignores half the die and risks thermal imbalance. For single-diode applications, select BAW56 (single version) or BAV70; BAW56QA is intended for dual-path functions like steering or clamping.
Does the DFN1010D-3 package require special stencil design for reflow soldering?
Yes - the SOT1215 footprint requires 0.35 mm wide solder lands with 0.45 mm spacing (per Figure 13), and solder paste apertures must match the visible side-pad geometry to ensure void-free joints and AOI visibility; standard 0.5 mm pitch stencils are insufficient.
BAW56QAZ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- 3-XDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Diode Configuration:
- 1 Pair Common Anode
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 90 V
- Current - Average Rectified (Io) (per Diode):
- 180mA (DC)
- Voltage - Forward (Vf) (Max) @ If:
- 1.25 V @ 150 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- 4 ns
- Current - Reverse Leakage @ Vr:
- 500 nA @ 80 V
- Operating Temperature - Junction:
- 150°C (Max)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DFN1010D-3
BAW56QAZ FAQ
1.How can I place an order for BAW56QAZ through Aetrix?
Please submit a Request for Quotation (RFQ) for BAW56QAZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAW56QAZ reliable?
The price and inventory of BAW56QAZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAW56QAZ is usually 5 days.
3.What payment methods are accepted for BAW56QAZ?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAW56QAZ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAW56QAZ?
BAW56QAZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAW56QAZ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAW56QAZ?
For technical support, including BAW56QAZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAW56QAZ requirements.
6.How does Aetrix verify that BAW56QAZ is sourced from the original manufacturer or authorized distributors?
All BAW56QAZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAW56QAZ meets industry standards.
7.What is the process for return or replacement of BAW56QAZ?
All BAW56QAZ units undergo pre-shipment inspection (PSI). If there is an issue with BAW56QAZ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAW56QAZ part is unused and in its original packaging.
Return procedure for BAW56QAZ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BAW56QAZ Tags

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BAV99-7-F
Diodes Incorporated

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BAT54C-7-F
Diodes Incorporated

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BAV99,215
Nexperia USA Inc.

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BAT54SLT1G
onsemi

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BAV70LT1G
onsemi

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BAT54CLT1G
onsemi

-
BAT54S-7-F
Diodes Incorporated

-
BAV99LT1G
onsemi

-
BAT54S,215
Nexperia USA Inc.

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BAS40-04LT1G
onsemi

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MMBD1503-TP
Micro Commercial Co

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BAV99WT1G
onsemi
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