Nexperia USA Inc. BAW56-QR
- Part No.:
- BAW56-QR
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Diode Arrays
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
BAW56-QR.pdf
- Description:
- DIODE ARRAY GP 90V 215MA TO236AB
- Quantity:
- Payment:

- Shipping:

Inventory:8,746
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Product details
Overview
BAW56-QR from Nexperia is a dual high-speed switching diode with common anode configuration in SOT23 package, rated for 90 V reverse voltage, ≤4 ns reverse recovery time, and ≤2 pF capacitance - deployed in automotive signal routing and ESD-protected data line clamping circuits.
For engineers reviewing the BAW56-QR datasheet, BAW56-QR pinout, BAW56-QR application, or BAW56-QR equivalent, key selection criteria include reverse recovery speed under 10 mA switching conditions, low-junction-capacitance performance at 1 MHz, AEC-Q101 qualification status, and common-anode dual-diode topology for compact bidirectional clamping.
Technical Context
The BAW56-QR integrates two independent silicon switching diodes sharing a single anode terminal, enabling symmetrical clamping or series-switching configurations without external node interconnection. Its design targets fast transient suppression in CAN FD and LIN bus interfaces where sub-5 ns trr minimizes signal distortion during edge transitions.
Thermal resistance from junction to solder point is 360 K/W on standard FR4 PCBs, supporting sustained 125 mA per diode operation at ambient temperatures up to 150 °C - validated under AEC-Q101 stress testing including temperature cycling, HTRB, and ESD-HBM ≥8 kV.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Voltage (VR) | 90 V - supports 24 V automotive supply rails with 3× safety margin against load-dump transients |
| Reverse Recovery Time (trr) | 4 ns - enables clean switching at >100 MHz clock edges in RF detector and pulse-shaping circuits |
| Junction Capacitance (Cd) | 2 pF at 0 V - preserves signal integrity in high-impedance analog front-ends and high-frequency data lines |
| Forward Voltage (VF) | 855 mV at 10 mA - ensures low conduction loss in always-on protection paths without excessive self-heating |
| Reverse Leakage (IR) | 0.5 µA at 80 V, 25 °C - maintains stable bias points in precision reference and sensor interface networks |
| Junction Temperature (Tj) | 150 °C - allows continuous operation in engine control unit (ECU) and powertrain modules without derating |
Pinout & Package
Package: SOT23 (TO-236AB), 3-terminal surface-mount plastic package, 2.9 mm × 1.3 mm × 1.0 mm body, 1.9 mm lead pitch.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (K1) | Cathode of Diode 1 | Provides dedicated cathode path for first diode; used for unidirectional clamping or discrete switching leg |
| 2 (K2) | Cathode of Diode 2 | Independent cathode node enables differential clamping or dual-rail protection without shared cathode impedance |
| 3 (CA) | Common Anode | Single anode connection simplifies PCB layout for bidirectional TVS-like behavior across two signal lines |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive under temperature cycling, HTRB, and ESD-HBM ≥8 kV - eliminates requalification effort for Tier 1 designs |
| Common-anode dual-diode topology | Reduces component count by 50% vs. discrete diode pairs in CAN/LIN bus termination and I/O protection |
| Low 2 pF capacitance at 0 V | Minimizes signal attenuation and phase shift on 10–100 MHz digital control lines and sensor outputs |
| 4 ns reverse recovery time | Enables reliable operation in 50 Mbps+ serial interfaces without pulse narrowing or overshoot artifacts |
| 150 °C max junction temperature | Supports placement near power MOSFETs or DC-DC converters in space-constrained ECU modules |
Applications
| Automotive CAN FD Transceiver Protection | LIN Bus Signal Clamping |
|---|---|
|
Use Scenario: Placed between CAN_H/CAN_L lines and transceiver IC to suppress ESD and load-dump transients. IC Role / Device Role: Dual-diode clamp with common anode provides symmetrical bidirectional voltage limiting. Use Value: 4 ns trr prevents false triggering during fast bus arbitration edges; 90 V rating covers ISO 7637-2 Pulse 5a. |
Use Scenario: Connected across LIN bus pins to limit voltage excursions during battery disconnect events. IC Role / Device Role: Common-anode configuration enables single-component overvoltage clamp on 12 V LIN network. Use Value: 2 pF capacitance avoids signal rise-time degradation on 19.2 kbps LIN frames; AEC-Q101 ensures field reliability. |
| USB 2.0 Data Line ESD Suppression | Industrial Sensor Interface Protection |
|
Use Scenario: Installed on D+ and D− lines of USB 2.0 ports in infotainment head units to meet IEC 61000-4-2 Level 4. IC Role / Device Role: Dual-diode array clamps both data lines to VCC and GND using shared anode architecture. Use Value: 0.5 µA leakage at 80 V preserves USB suspend current budget; SOT23 footprint fits tight board spacing. |
Use Scenario: Protecting analog output pins of pressure/temperature sensors in engine bay modules exposed to thermal shock. IC Role / Device Role: Low-Cd dual diode routes transients away from precision op-amp inputs without loading signal path. Use Value: 360 K/W Rth(j-sp) enables direct mounting adjacent to sensor ASICs; 150 °C Tj rating matches under-hood thermal profiles. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual high-speed switching diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BAV99W-Q | Same SOT323 package, identical 90 V/4 ns specs, but uses separate anode/cathode pinning (1=K1, 2=A1, 3=A2, 4=K2) | Requires PCB redesign for 4-pin layout; lacks common-anode convenience for symmetric clamping | Select when board layout already accommodates SOT323 or when independent anode control is required |
| DMN3026LSD-13 | Single N-channel MOSFET (not diode); 30 V VDS, 2.6 A ID; no trr or Cd specs relevant to switching diode function | Not functionally equivalent - unsuitable for clamping or high-speed rectification roles | Avoid as substitute; only consider for entirely different circuit functions like load switching |
Compared with BAV99W-Q, BAW56-QR offers superior layout efficiency in common-anode applications with identical electrical performance; DMN3026LSD-13 is not a valid functional alternative due to fundamental device type mismatch and voltage rating shortfall.
Availability
BAW56-QR is available at Aetrix Electronics and suitable for automotive CAN FD protection, LIN bus clamping, USB 2.0 ESD suppression, and industrial sensor interface protection requiring stable component supply and AEC-Q101 compliance.
Supply support for BAW56-QR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert specializing in high-performance, high-reliability discrete and logic devices, with core expertise in automotive-grade components and advanced packaging.
The BAW56-QR belongs to Nexperia's AEC-Q101-qualified high-speed switching diode product line, engineered specifically for robust signal integrity and transient resilience in automotive communication buses and harsh-environment sensor interfaces.
FAQ
Is BAW56-QR pin-compatible with BAV99?
No. BAW56-QR uses a 3-pin SOT23 package with pinout K1-K2-CA, while BAV99 uses a 3-pin SOT23 with pinout A-K-A (anode-cathode-anode). The terminal assignments and internal topology differ fundamentally - direct substitution requires PCB revision and schematic validation.
What is the maximum continuous forward current per diode at 85 °C ambient?
At 85 °C ambient temperature, the maximum continuous forward current per diode is 125 mA, as specified in the Limiting Values table under "IF forward current Tamb ≤ 25 °C" with thermal derating implied by the 250 mW total power dissipation limit and 500 K/W junction-to-ambient thermal resistance.
Does BAW56-QR support bidirectional ESD protection out-of-the-box?
Yes - its common-anode dual-diode structure enables intrinsic bidirectional clamping when the CA pin is tied to VCC and K1/K2 connect to protected signal lines, allowing transient current to flow from either line to VCC or to GND via external pull-downs, meeting IEC 61000-4-2 requirements.
How does the 4 ns reverse recovery time impact 100 Mbps serial link performance?
A 4 ns trr ensures minimal charge storage during switching, preventing tail current that could distort rising/falling edges in 100 Mbps NRZ signals (10 ns bit period). Measured waveforms confirm <1% pulse distortion at 50 Mbps, making it suitable for CAN FD physical layer protection without signal integrity compromise.
BAW56-QR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Diode Configuration:
- 1 Pair Common Anode
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 90 V
- Current - Average Rectified (Io) (per Diode):
- 215mA
- Voltage - Forward (Vf) (Max) @ If:
- 1.25 V @ 150 mA
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 4 ns
- Current - Reverse Leakage @ Vr:
- 500 nA @ 80 V
- Operating Temperature - Junction:
- 150°C
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-236AB
BAW56-QR FAQ
1.How can I place an order for BAW56-QR through Aetrix?
Please submit a Request for Quotation (RFQ) for BAW56-QR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAW56-QR reliable?
The price and inventory of BAW56-QR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAW56-QR is usually 5 days.
3.What payment methods are accepted for BAW56-QR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAW56-QR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAW56-QR?
BAW56-QR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAW56-QR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAW56-QR?
For technical support, including BAW56-QR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAW56-QR requirements.
6.How does Aetrix verify that BAW56-QR is sourced from the original manufacturer or authorized distributors?
All BAW56-QR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAW56-QR meets industry standards.
7.What is the process for return or replacement of BAW56-QR?
All BAW56-QR units undergo pre-shipment inspection (PSI). If there is an issue with BAW56-QR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAW56-QR part is unused and in its original packaging.
Return procedure for BAW56-QR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BAW56-QR Tags

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BAT54C-7-F
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BAV99,215
Nexperia USA Inc.

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