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Nexperia USA Inc. BAW56S,115
- Part No.:
- BAW56S,115
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Diode Arrays
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
BAW56S,115.pdf
- Description:
- DIODE ARRAY GP 90V 250MA 6-TSSOP
- Quantity:
- Payment:
- Shipping:
Inventory:31,757
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Product details
Overview
BAW56S from Nexperia is a dual-common-anode high-speed switching diode array in SOT363-3 (TSSOP6) package, featuring 90 V reverse voltage rating, ≤4 ns reverse recovery time, ≤2 pF capacitance, and 250 mA per-diode forward current capability; used in high-frequency signal routing and compact DC-DC converter flyback paths.
For engineers reviewing the BAW56S datasheet, BAW56S pinout, BAW56S application, or BAW56S equivalent, this page delivers verified electrical parameters, validated dual-diode topology, thermal resistance (255 K/W), and real-world switching performance metrics under pulsed IF = 10 mA conditions.
Technical Context
The BAW56S integrates two independent diodes sharing a common anode (pins 1–2–6) and two additional diodes sharing another common anode (pins 3–4–5), forming a dual-series-pair configuration optimized for bidirectional clamping and fast polarity selection. Its trr ≤ 4 ns is measured at IF = IR = 10 mA with RL = 100 Ω and IR(meas) = 1 mA.
Thermal design relies on junction-to-solder-point resistance of 255 K/W when mounted on FR4 PCB with single-sided copper; VF remains ≤855 mV at IF = 10 mA (pulsed, Tamb = 25 °C), supporting low-loss switching in space-constrained power management stages.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Voltage (VR) | 90 V - supports input stage protection in 48 V industrial bus and PoE-powered systems |
| Reverse Recovery Time (trr) | ≤4 ns - enables operation up to ~100 MHz switching frequencies in RF detector and sample-and-hold circuits |
| Diode Capacitance (Cd) | ≤2 pF at VR = 0 V, f = 1 MHz - minimizes signal distortion in high-speed data line clamping |
| Forward Voltage (VF) | ≤855 mV at IF = 10 mA - reduces conduction loss in low-voltage synchronous rectifier auxiliary paths |
| Reverse Current (IR) | ≤0.5 µA at VR = 80 V, Tamb = 25 °C - ensures low standby leakage in battery-backed signal conditioning |
| Junction Temperature (Tj) | 150 °C max - allows sustained operation in sealed enclosures without active cooling |
Pinout & Package
BAW56S is housed in a 6-pin TSSOP6 (SOT363-3) surface-mount plastic package measuring 2.2 mm × 1.35 mm × 0.95 mm, with 0.65 mm lead pitch and exposed solder pad compatibility for thermal relief.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Cathode (Diode 1) | Output node for first diode in common-anode pair (pins 1/2/6) |
| 2 | Cathode (Diode 2) | Independent output node sharing anode with Pin 1 and Pin 6 |
| 3 | Common Anode (Diodes 3 & 4) | Shared input node for second diode pair (pins 3/4/5) |
| 4 | Cathode (Diode 3) | Output node for third diode in second common-anode group |
| 5 | Cathode (Diode 4) | Output node for fourth diode, electrically isolated from pins 1–2–6 |
| 6 | Common Anode (Diodes 1 & 2) | Shared input node enabling dual-path switching from single source |
Key Features
| Feature | Design Value |
|---|---|
| Dual common-anode topology | Enables compact dual-channel level shifting or OR-ing without external wiring |
| 4 ns reverse recovery | Supports clean edge transitions in 50 Mbps digital isolator gate drive feedback loops |
| 2 pF junction capacitance | Preserves signal integrity in 100 MHz RF front-end limiter applications |
| 250 mA per-diode rating | Handles peak currents in 5 V/3.3 V buck converter bootstrap charging circuits |
Applications
| High-Speed Signal Clamping | Compact DC-DC Converter Auxiliary Path |
|---|---|
Use Scenario: Protecting ADC inputs from ESD transients and overvoltage spikes in portable test equipment. IC Role / Device Role / Timing Role: Fast-turn-on clamping diode limiting input swing to ±0.7 V beyond supply rails. Use Value: ≤4 ns trr ensures transient energy is shunted before ADC sampling window opens, preventing data corruption. | Use Scenario: Providing bootstrap diode path in 2 MHz synchronous buck controller ICs for gate driver supply. IC Role / Device Role / Timing Role: High-efficiency charge transfer switch during low-side FET on-time. Use Value: ≤855 mV VF at 10 mA reduces bootstrap capacitor recharge loss, improving light-load efficiency by ≥1.2%. |
| Dual-Channel Level Translation | Low-Power Logic Interface Protection |
Use Scenario: Bidirectional voltage translation between 1.8 V I²C master and 3.3 V sensor peripheral. IC Role / Device Role / Timing Role: Dual-diode pair performing passive pull-up translation with direction-independent conduction. Use Value: Matched VF across diodes ensures symmetric rise/fall times ≤15 ns, preserving I²C timing margins. | Use Scenario: Isolating GPIO lines in battery-powered IoT nodes against accidental 5 V USB insertion. IC Role / Device Role / Timing Role: Low-leakage (≤0.5 µA) reverse-blocking element in series with microcontroller pin. Use Value: ≤2 pF capacitance avoids signal degradation on 10 MHz clock or UART lines, maintaining timing compliance. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed dual-diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BAV99S,115 | Same SOT363-3 package; trr = 4 ns (typ), but Cd = 2.5 pF (vs. 2 pF); VR = 70 V (vs. 90 V) | Limited to ≤36 V bus systems; higher capacitance may affect >80 MHz signal fidelity | Select when cost sensitivity outweighs 20 V VR margin and sub-100 MHz bandwidth requirements |
| MMBD7000LT1G | SOT-23-6 package; trr = 4 ns (typ), VR = 70 V, Cd = 2 pF, but VF = 1.25 V at IF = 150 mA | Higher VF increases conduction loss in high-duty-cycle applications; larger footprint than SOT363-3 | Prefer for legacy SOT-23 board reuse where pin compatibility with existing layout is mandatory |
Compared with BAV99S,115 and MMBD7000LT1G, the BAW56S provides superior 90 V VR headroom and lowest Cd among SOT363-3 dual-diodes, making it optimal for industrial 48 V systems requiring minimal signal loading and robust transient blocking.
Availability
BAW56S is available at Aetrix Electronics and suitable for high-frequency signal clamping, compact DC-DC converter auxiliary paths, dual-channel level translation, and low-power logic interface protection requiring stable component supply across automotive-adjacent industrial, medical, and communications platforms.
Supply support for BAW56S includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-performance, reliable standard-logic and discrete components, serving industrial, automotive, and consumer markets with scalable manufacturing and rigorous quality control.
The BAW56S belongs to Nexperia's high-speed switching diode product line, engineered specifically for space-constrained, high-frequency applications demanding sub-5 ns recovery, ultra-low capacitance, and dual-diode integration in miniature packages.
FAQ
What is the maximum continuous forward current per diode in the BAW56S?
The BAW56S supports 250 mA per diode at Ts = 60 °C with device mounted on FR4 PCB (single-sided copper, tin-plated). This rating assumes steady-state thermal equilibrium and excludes pulse conditions. At ambient temperatures above 60 °C, derating applies per the thermal resistance curve (Rth(j-sp) = 255 K/W).
Can the BAW56S be used in place of a single discrete diode?
Yes - either half of the BAW56S (e.g., pins 1–2–6 or pins 3–4–5) functions as an independent high-speed diode with full 90 V VR and ≤4 ns trr. Unused cathodes must be left unconnected or tied to appropriate potential; common anodes should not be paralleled unless circuit topology explicitly requires shared sourcing.
Is the BAW56S suitable for automotive applications?
No - the BAW56S is not AEC-Q101 qualified and lacks automotive-grade screening, temperature cycling validation, or guaranteed PPAP documentation. Nexperia explicitly states non-automotive qualification in its legal disclaimers; use in automotive systems requires formal qualification by the end customer and carries full liability assumption.
How does the 255 K/W thermal resistance impact PCB layout?
A Rth(j-sp) of 255 K/W means each 100 mW of dissipated power raises junction temperature by 25.5 °C above solder point temperature. To maintain Tj ≤ 125 °C at Tamb = 85 °C, total power per diode must stay below ~155 mW - achieved via short pulse widths, low duty cycles, or enhanced local copper pour under the exposed pad area.
BAW56S,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Diode Configuration:
- 2 Pair Common Anode
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 90 V
- Current - Average Rectified (Io) (per Diode):
- 250mA (DC)
- Voltage - Forward (Vf) (Max) @ If:
- 1.25 V @ 150 mA
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 4 ns
- Current - Reverse Leakage @ Vr:
- 500 nA @ 80 V
- Operating Temperature - Junction:
- 150°C (Max)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-TSSOP
BAW56S,115 FAQ
1.How can I place an order for BAW56S,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for BAW56S,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAW56S,115 reliable?
The price and inventory of BAW56S,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAW56S,115 is usually 5 days.
3.What payment methods are accepted for BAW56S,115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAW56S,115 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAW56S,115?
BAW56S,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAW56S,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAW56S,115?
For technical support, including BAW56S,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAW56S,115 requirements.
6.How does Aetrix verify that BAW56S,115 is sourced from the original manufacturer or authorized distributors?
All BAW56S,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAW56S,115 meets industry standards.
7.What is the process for return or replacement of BAW56S,115?
All BAW56S,115 units undergo pre-shipment inspection (PSI). If there is an issue with BAW56S,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAW56S,115 part is unused and in its original packaging.
Return procedure for BAW56S,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BAW56S,115 Tags
-
BAV99-7-F
Diodes Incorporated
-
BAT54C-7-F
Diodes Incorporated
-
BAV99,215
Nexperia USA Inc.
-
BAT54SLT1G
onsemi
-
BAV70LT1G
onsemi
-
BAT54CLT1G
onsemi
-
BAT54S-7-F
Diodes Incorporated
-
BAV99LT1G
onsemi
-
BAT54S,215
Nexperia USA Inc.
-
BAS40-04LT1G
onsemi
-
MMBD1503-TP
Micro Commercial Co
-
BAV99WT1G
onsemi
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