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Nexperia USA Inc. BAW56S/DG/B2,115
- Part No.:
- BAW56S/DG/B2,115
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Diode Arrays
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
BAW56S/DG/B2,115.pdf
- Description:
- DIODE ARRAY GP 90V 250MA 6-TSSOP
- Quantity:
- Payment:
- Shipping:
Inventory:4,017
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Product details
Overview
BAW56S/DG/B2,115 from Nexperia is a dual high-speed switching diode in SOT23 package with common anode configuration, reverse voltage rating of 90 V, reverse recovery time ≤ 4 ns, and junction capacitance ≤ 2 pF. It enables fast signal routing and clamping in compact DC-DC converter feedback paths and USB data line protection circuits.
For engineers reviewing the BAW56S/DG/B2,115 datasheet, BAW56S/DG/B2,115 pinout, BAW56S/DG/B2,115 application, or BAW56S/DG/B2,115 equivalent, key selection criteria include trr ≤ 4 ns at IF = 10 mA, VR = 90 V, Cd = 2 pF at 0 V, IF(max) = 215 mA per diode, and thermal resistance Rth(j-a) = 500 K/W on FR4 PCB.
Technical Context
The BAW56S/DG/B2,115 integrates two independent silicon switching diodes sharing a common anode terminal, optimized for low-capacitance, low-leakage operation in high-frequency signal path control. Its trr ≤ 4 ns is measured under standardized conditions (IF = IR = 10 mA, RL = 100 Ω, IR(meas) = 1 mA).
Thermal performance is defined for FR4 PCB mounting: Rth(j-a) = 500 K/W (free air), Rth(j-sp) = 360 K/W (solder point). Forward voltage ranges from 715 mV at 1 mA to 1.25 V at 150 mA, with reverse leakage ≤ 0.5 µA at VR = 80 V and 25 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Voltage (VR) | 90 V - supports input stage clamping in 48 V industrial power rails |
| Reverse Recovery Time (trr) | ≤ 4 ns - enables reliable operation above 100 MHz switching frequencies |
| Junction Capacitance (Cd) | ≤ 2 pF at 0 V - minimizes signal distortion in RF detector and antenna switch applications |
| Forward Current (IF) | 215 mA per diode - sufficient for logic-level signal steering and low-power rectification |
| Reverse Leakage (IR) | ≤ 0.5 µA at VR = 80 V, 25 °C - ensures low standby power loss in battery-backed circuits |
| Thermal Resistance (Rth(j-a)) | 500 K/W - requires minimal PCB copper area for thermal management in space-constrained layouts |
Pinout & Package
SOT23 (TO-236AB) plastic surface-mount package: 3-terminal, 1.9 mm pitch, 2.9 mm × 1.3 mm × 1.0 mm body, standard footprint compatible with reflow and wave soldering per Figures 8–9.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | K1 (cathode of diode 1) | Provides dedicated cathode connection for first diode; routed separately for asymmetric signal conditioning |
| 2 | K2 (cathode of diode 2) | Independent cathode for second diode; enables dual-path clamping or polarity-selective routing |
| 3 | CA (common anode) | Shared anode node simplifies biasing in dual-diode configurations such as OR-ing or level translation |
Key Features
| Feature | Design Value |
|---|---|
| High-speed switching | trr ≤ 4 ns enables use in >100 MHz clock signal routing and pulse shaping circuits |
| Low junction capacitance | Cd ≤ 2 pF preserves signal integrity in 50 Ω RF interfaces and high-speed data lines |
| Common-anode dual-diode topology | Reduces component count in bidirectional ESD protection and dual-rail clamp designs |
| Low reverse leakage | IR ≤ 0.5 µA at 80 V ensures <1 nW standby dissipation in always-on sensor interface circuits |
| SOT23 package compatibility | Standard footprint allows drop-in replacement in legacy designs using BAV99, BAS16, or similar dual diodes |
Applications
| USB 2.0 Data Line Protection | DC-DC Converter Feedback Path |
|---|---|
|
Use Scenario: Clamping transient voltages on D+ and D− lines during hot-plug events and ESD discharge. IC Role / Device Role / Timing Role: Dual-cathode, common-anode diode provides symmetrical bidirectional clamping without adding series resistance. Use Value: 2 pF capacitance avoids signal rise-time degradation; 4 ns trr prevents latch-up during fast transients. |
Use Scenario: Isolating feedback voltage divider from controller output during startup and fault conditions. IC Role / Device Role / Timing Role: High-speed switching diode blocks reverse current flow while allowing fast forward conduction during regulation transitions. Use Value: 90 V VR rating accommodates overshoot in 48 V buck converters; 215 mA IF handles typical divider currents. |
| RF Detector Input Stage | Logic-Level Signal Steering |
|
Use Scenario: Rectifying weak RF signals in amplitude detection circuits operating up to 1 GHz. IC Role / Device Role / Timing Role: Low-Cd, low-VF diode acts as envelope detector with minimal harmonic distortion. Use Value: 2 pF capacitance maintains impedance match into 50 Ω sources; 715 mV VF at 1 mA enables sensitivity down to −20 dBm. |
Use Scenario: Selecting between two digital control signals (e.g., active-high vs. active-low enable) feeding a single gate driver input. IC Role / Device Role / Timing Role: Common-anode dual diode implements wired-OR logic with sub-ns propagation delay. Use Value: 4 ns trr ensures clean signal edges at 50 MHz toggle rates; SOT23 footprint fits tight routing channels near microcontrollers. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual high-speed switching diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BAV99,115 | Same SOT23 package, identical pinout (K1/K2/CA), but trr = 4 ns (typ), VR = 70 V, Cd = 2 pF | Limited to ≤70 V systems; suitable where lower reverse voltage suffices and cost is prioritized | Select when VR margin < 20 V is acceptable and qualification for non-automotive use is confirmed |
| BAS16,115 | Single diode in SOT23; VR = 85 V, trr = 4 ns, Cd = 2 pF - no common-anode dual configuration | Requires two devices for dual-path function; increases board area and assembly cost | Choose only if design already uses discrete single diodes and layout cannot accommodate dual-diode integration |
Compared with BAV99,115, the BAW56S/DG/B2,115 offers +20 V higher VR margin critical for 48 V industrial bus protection; versus BAS16,115, its integrated dual-diode structure reduces component count by 50% and eliminates inter-device timing skew in synchronous clamping.
Availability
BAW56S/DG/B2,115 is available at Aetrix Electronics and suitable for USB interface protection, DC-DC converter feedback isolation, and RF detector front-end applications requiring stable component supply across production lifecycles.
Supply support for BAW56S/DG/B2,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert delivering high-performance, reliable discrete, logic, and MOSFET devices with focus on efficiency, miniaturization, and robustness in high-volume applications.
The BAW56 series belongs to Nexperia's high-speed switching diode product line, engineered specifically for signal integrity preservation and fast transient response in compact consumer, industrial, and communications equipment.
FAQ
What is the maximum continuous forward current per diode in the BAW56S/DG/B2,115?
The absolute maximum continuous forward current per diode is 215 mA at Tamb ≤ 25 °C on FR4 PCB with standard footprint. Derating applies above 25 °C ambient: current must be reduced linearly to zero at 150 °C junction temperature, per the thermal resistance Rth(j-a) = 500 K/W specification.
Can the BAW56S/DG/B2,115 be used in automotive applications?
No - this part is explicitly marked as non-automotive qualified in the revision history (v.7, October 2022). Nexperia states it is not tested or qualified to AEC-Q101 standards. For automotive use, consult Nexperia's BAW56-Q series or other AEC-Q101 qualified dual diodes.
How does the common-anode configuration affect circuit design compared to dual-cathode variants?
The CA (pin 3) common-anode topology allows both diodes to share a single positive bias node, simplifying clamping to VCC and enabling wired-OR logic. Unlike dual-cathode parts (e.g., BAV99), it cannot directly clamp to ground without external resistors - design must route K1 and K2 to separate signal lines while tying CA to the reference rail.
Is the 4 ns reverse recovery time guaranteed or typical?
The 4 ns value is the maximum specified limit (trr ≤ 4 ns) under defined test conditions (IF = IR = 10 mA, RL = 100 Ω, IR(meas) = 1 mA, Tamb = 25 °C), making it a guaranteed parameter across all units in the production lot, not a typical value.
BAW56S/DG/B2,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Diode Configuration:
- 2 Pair Common Anode
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 90 V
- Current - Average Rectified (Io) (per Diode):
- 250mA (DC)
- Voltage - Forward (Vf) (Max) @ If:
- 1.25 V @ 150 mA
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 4 ns
- Current - Reverse Leakage @ Vr:
- 500 nA @ 80 V
- Operating Temperature - Junction:
- 150°C (Max)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-TSSOP
BAW56S/DG/B2,115 FAQ
1.How can I place an order for BAW56S/DG/B2,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for BAW56S/DG/B2,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAW56S/DG/B2,115 reliable?
The price and inventory of BAW56S/DG/B2,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAW56S/DG/B2,115 is usually 5 days.
3.What payment methods are accepted for BAW56S/DG/B2,115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAW56S/DG/B2,115 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAW56S/DG/B2,115?
BAW56S/DG/B2,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAW56S/DG/B2,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAW56S/DG/B2,115?
For technical support, including BAW56S/DG/B2,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAW56S/DG/B2,115 requirements.
6.How does Aetrix verify that BAW56S/DG/B2,115 is sourced from the original manufacturer or authorized distributors?
All BAW56S/DG/B2,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAW56S/DG/B2,115 meets industry standards.
7.What is the process for return or replacement of BAW56S/DG/B2,115?
All BAW56S/DG/B2,115 units undergo pre-shipment inspection (PSI). If there is an issue with BAW56S/DG/B2,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAW56S/DG/B2,115 part is unused and in its original packaging.
Return procedure for BAW56S/DG/B2,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BAW56S/DG/B2,115 Tags
-
BAV99-7-F
Diodes Incorporated
-
BAT54C-7-F
Diodes Incorporated
-
BAV99,215
Nexperia USA Inc.
-
BAT54SLT1G
onsemi
-
BAV70LT1G
onsemi
-
BAT54CLT1G
onsemi
-
BAT54S-7-F
Diodes Incorporated
-
BAV99LT1G
onsemi
-
BAT54S,215
Nexperia USA Inc.
-
BAS40-04LT1G
onsemi
-
MMBD1503-TP
Micro Commercial Co
-
BAV99WT1G
onsemi
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