Nexperia USA Inc. BAW56S/DG/B3X

Overview

BAW56S/DG/B3X from Nexperia is a dual high-speed switching diode in SOT23 package with common anode configuration, reverse voltage rating of 90 V, reverse recovery time ≤ 4 ns, and junction capacitance ≤ 2 pF - used for fast signal routing and clamping in digital logic interfaces and RF detector circuits.

For engineers reviewing the BAW56S/DG/B3X datasheet, BAW56S/DG/B3X pinout, BAW56S/DG/B3X application, or BAW56S/DG/B3X equivalent, key selection criteria include trr ≤ 4 ns at IF = 10 mA, VR = 90 V, Cd = 2 pF at 0 V, IF(max) = 215 mA per diode, and thermal resistance Rth(j-a) = 500 K/W on FR4 PCB.

Technical Context

The BAW56S/DG/B3X integrates two independent high-speed silicon switching diodes sharing a common anode terminal, enabling compact dual-path clamping or steering without discrete pairing. Its trr ≤ 4 ns and low Cd ≤ 2 pF support operation up to ~100 MHz in pulse shaping and RF envelope detection.

Designed for surface-mount assembly on standard FR4 PCBs, it operates across –65 °C to +150 °C ambient, with forward voltage VF ≤ 855 mV at IF = 10 mA and IR ≤ 0.5 µA at VR = 80 V and Tamb = 25 °C - confirming suitability for low-leakage, high-reliability signal conditioning.

Key Specifications

Pinout & Package

Encapsulated in a standard SOT23 (TO-236AB) plastic surface-mount package measuring 2.9 mm × 1.3 mm × 1.0 mm with 1.9 mm lead pitch and tin-plated terminations compatible with reflow and wave soldering per Figures 8–9.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed dual-diode applications.

Compared with BAV99S,115 and MMBD7000LT1G, the BAW56S/DG/B3X delivers superior 90 V VR headroom and tighter trr specification - critical for robustness in industrial 24/48 V I/O and high-frequency signal routing where margin against breakdown and timing distortion is non-negotiable.

Availability

BAW56S/DG/B3X is available at Aetrix Electronics and suitable for high-speed digital interface design, RF detector circuits, microcontroller I/O protection, and industrial signal conditioning requiring stable component supply and consistent SOT23 footprint compatibility.

Supply support for BAW56S/DG/B3X includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability essential semiconductors - delivering discrete, logic, and MOSFET solutions optimized for efficiency, size, and manufacturability.

The BAW56S/DG/B3X belongs to Nexperia's high-speed switching diode product line, engineered specifically for signal integrity preservation in digital, RF, and interface applications where speed, low capacitance, and repeatable SMT performance are mandatory.

FAQ

What is the maximum continuous forward current per diode in the BAW56S/DG/B3X?

The absolute maximum continuous forward current per diode is 215 mA at Tamb ≤ 25 °C on a standard FR4 PCB with single-sided copper. Derating is required above 25 °C ambient, reaching zero at 150 °C junction temperature. This rating assumes no simultaneous conduction in both diodes under worst-case thermal coupling.

Can the BAW56S/DG/B3X be used in automotive applications?

No - the BAW56S/DG/B3X is explicitly designated as non-automotive qualified per Nexperia's revision history (v.7, 2022). It lacks AEC-Q101 qualification, automotive-grade screening, and extended temperature validation beyond its specified –65 °C to +150 °C operating range. Automotive designs require the BAW56-Q series variants.

How does the common-anode configuration affect circuit implementation?

The common-anode (CA) pin must be connected to the positive reference (e.g., VCC or bias rail), while cathodes K1 and K2 route to signal nodes requiring clamping or steering. This configuration enables active-low signal control, bidirectional ESD shunting to VCC, or dual-path rectification - unlike common-cathode alternatives that clamp to ground.

Is the 4 ns reverse recovery time guaranteed across temperature?

The 4 ns trr is specified as a maximum value at Tamb = 25 °C under defined test conditions (IF = 10 mA, IR = 10 mA, RL = 100 Ω). At elevated temperatures, trr increases - e.g., typical values reach ~6 ns at 125 °C - so designs requiring tight timing margins must verify performance across the full operating range.