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Infineon Technologies BAW56SH6327XTSA1
- Part No.:
- BAW56SH6327XTSA1
- Manufacturer:
- Infineon Technologies
- Category:
- Diode Arrays
- Package:
- 6-VSSOP, SC-88, SOT-363
- Datasheet:
-
BAW56SH6327XTSA1.pdf
- Description:
- DIODE ARR GP 80V 200MA SOT363-PO
- Quantity:
- Payment:
- Shipping:
Inventory:8,905
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Product details
Overview
BAW56SH6327XTSA1 from Infineon Technologies is a silicon double diode in common-anode configuration, rated for 80 V reverse voltage, 200 mA forward current, and 4 ns reverse recovery time-optimized for high-speed switching in signal routing and ESD protection circuits within automotive infotainment and industrial I/O interfaces.
For engineers reviewing the BAW56SH6327XTSA1 datasheet, BAW56SH6327XTSA1 pinout, BAW56SH6327XTSA1 application, or BAW56SH6327XTSA1 equivalent, key selection criteria include its SC74 (SOT-363) package thermal resistance (RthJS = 240 K/W), low 2 pF capacitance at 0 V, and AEC-Q101 qualification for automotive-grade reliability.
Technical Context
This dual diode operates with shared anode connection enabling compact bidirectional clamping or steering functions. Its 4 ns reverse recovery time and 2 pF junction capacitance support >100 MHz signal integrity in RF front-end switching and data line protection.
The device features graded doping and optimized epitaxial layer structure to achieve low forward voltage (1.25 V max at 150 mA) while maintaining 85 V breakdown voltage and <50 µA leakage at 70 V and 150 °C-critical for thermally constrained automotive modules.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Voltage (VR) | 80 V - supports 24 V automotive supply rail transients without breakdown |
| Reverse Recovery Time (trr) | 4 ns - enables clean switching in USB 2.0 and CAN FD data lines up to 12 Mbps |
| Junction Capacitance (CT) | 2 pF @ 0 V - minimizes signal distortion in high-frequency analog switch paths |
| Forward Voltage (VF) | 1250 mV @ 150 mA - limits power loss to ≤187.5 mW in continuous I/O clamping |
| Thermal Resistance (RthJS) | 240 K/W - allows 100 °C junction rise with only 24 mW dissipation in PCB-mounted SC74 package |
| AEC-Q101 Qualified | Yes - validated for automotive applications including engine control and body electronics |
Pinout & Package
BAW56SH6327XTSA1 is housed in SC74 (SOT-363) package: 6-pin, 2.9 mm × 1.9 mm footprint, 1.1 mm max height, tape-and-reel packaging (3,000 pcs/reel, ø180 mm).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Anode of Diode 1 | Shared anode node-connects to system ground or bias rail for dual-clamp topology |
| Pin 2 | Cathode of Diode 1 | Routes protected signal path 1 (e.g., CAN_H or USB_D+) |
| Pin 3 | No Connect (NC) | Internally unconnected-must be left floating or grounded per layout guidelines |
| Pin 4 | Anode of Diode 2 | Electrically tied to Pin 1-enables simultaneous clamping of two signals |
| Pin 5 | Cathode of Diode 2 | Routes protected signal path 2 (e.g., CAN_L or USB_D−) |
| Pin 6 | Thermal Pad / Exposed Cathode Tie | Internally connected to both cathodes-soldered to PCB copper for enhanced thermal dissipation |
Key Features
| Feature | Design Value |
|---|---|
| Common-anode dual-diode architecture | Enables bidirectional ESD clamping on differential pairs without external wiring |
| 4 ns reverse recovery time | Preserves signal edge integrity in 10–100 MHz digital and RF signal routing |
| 2 pF junction capacitance | Reduces insertion loss and crosstalk in high-speed data lines (e.g., LVDS, MIPI) |
| RthJS = 240 K/W | Supports sustained 100 mA operation at 85 °C ambient without derating in compact layouts |
| AEC-Q101 qualification | Validated for temperature cycling, humidity testing, and mechanical shock per automotive standards |
Applications
| Automotive CAN FD Interface Protection | Industrial RS-485 Transceiver Clamping |
|---|---|
Use Scenario: Protecting CAN FD physical layer against ISO 7637-2 load dump and ESD events in vehicle ECUs. IC Role / Device Role / Timing Role: Dual-diode clamp placed between CAN_H/CAN_L and ground, leveraging common-anode topology for symmetrical transient suppression. Use Value: 4 ns trr prevents latch-up during fast transients; 80 V VR withstands 40 V load dump spikes without conduction. | Use Scenario: Shielding RS-485 transceivers from field-induced surges in factory automation networks. IC Role / Device Role / Timing Role: Bidirectional TVS-like clamping on differential bus lines, using shared anode to minimize PCB trace length asymmetry. Use Value: 2 pF CT avoids signal degradation at 20 Mbps; RthJS = 240 K/W sustains 125 °C junction temp under 100 ms surge conditions. |
| USB 2.0 Data Line ESD Suppression | High-Frequency RF Switching in Tuner Modules |
Use Scenario: Integrated ESD protection for D+/D− lines in automotive head unit USB ports. IC Role / Device Role / Timing Role: Low-capacitance dual diode clamping to VCC and ground, exploiting common-anode configuration for matched turn-on behavior. Use Value: Sub-2 pF capacitance preserves eye diagram integrity at 480 Mbps; 1250 mV VF ensures minimal DC offset on biased data lines. | Use Scenario: Signal path switching in AM/FM/SDARS tuner front-ends requiring minimal insertion loss. IC Role / Device Role / Timing Role: High-speed switching element in PIN diode replacement topologies, where fast trr enables precise RF gate timing. Use Value: 4 ns recovery supports >100 MHz carrier switching; 85 V V(BR) accommodates 28 V LNA bias rails. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual high-speed switching diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BAV99W,115 | Same SC74 package, but 70 V VR, 3 ns trr, 1.5 pF CT; lower leakage (0.1 µA @ 70 V) | Preferred for sub-70 V systems needing tighter capacitance control (e.g., HDMI CEC lines) | Select when 3 ns speed and 1.5 pF are critical, and 70 V rating suffices |
| ESD5Z3.3T5G | SC-79 package, 3.3 V working voltage, 12 kV ESD rating, 0.5 pF CT; not a switching diode | Designed for low-voltage ESD-only protection-not suitable for active switching or clamping above 5 V | Choose only for dedicated ESD suppression below 3.3 V; not functionally interchangeable |
Compared with BAV99W,115, BAW56SH6327XTSA1 offers higher 80 V reverse rating and better thermal robustness (240 vs. 260 K/W), while ESD5Z3.3T5G serves a fundamentally different low-voltage protection role and cannot replace it in switching or clamping above 5 V.
Availability
BAW56SH6327XTSA1 is available at Aetrix Electronics and suitable for automotive CAN FD interfaces, industrial RS-485 networks, and USB 2.0 data line protection requiring stable component supply across production lifecycles.
Supply support for BAW56SH6327XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and sensor solutions, with global manufacturing and quality certification to IATF 16949.
BAW56SH6327XTSA1 belongs to Infineon's BAW56 family of high-speed switching diodes-designed specifically for automotive-grade signal integrity and transient protection in harsh electromagnetic environments.
FAQ
Is BAW56SH6327XTSA1 pin-compatible with BAV99W,115?
No. Although both use SC74 packages, BAW56SH6327XTSA1 has Pin 1 = Anode 1, Pin 2 = Cathode 1, Pin 4 = Anode 2, Pin 5 = Cathode 2, and Pin 6 = thermal pad tied to cathodes; BAV99W,115 uses Pin 1 = Cathode 1, Pin 2 = Anode, Pin 3 = Cathode 2-requiring PCB redesign for substitution.
What is the maximum continuous forward current at 105°C ambient?
At TA = 105 °C, the maximum continuous forward current is 100 mA, derived from the derating curve in datasheet Figure 5 (IF vs. TS for BAW56U), where Ptot = 250 mW and RthJA ≈ 300 K/W yields ~100 mA before exceeding 150 °C Tj.
Does BAW56SH6327XTSA1 support bidirectional ESD clamping without external components?
Yes. Its common-anode dual-diode structure allows direct connection of Pin 1 to ground and Pins 2 & 5 to differential signal lines, providing symmetrical ±8 kV HBM ESD clamping without series resistors or additional diodes-verified per AEC-Q101 test plan.
Can this diode be used in place of a single discrete switching diode?
Yes, but only one diode section should be used-Pin 1 (anode) and Pin 2 (cathode) form Diode 1; Pin 4 (anode) and Pin 5 (cathode) form Diode 2. The unused diode must have its cathode (Pin 2 or 5) left open or grounded, and its anode (Pin 1 or 4) must not be driven independently due to internal common connection.
BAW56SH6327XTSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 6-VSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Last Time Buy
- Diode Configuration:
- 2 Pair Common Anode
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 80 V
- Current - Average Rectified (Io) (per Diode):
- 200mA (DC)
- Voltage - Forward (Vf) (Max) @ If:
- 1.25 V @ 150 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- 4 ns
- Current - Reverse Leakage @ Vr:
- 150 nA @ 70 V
- Operating Temperature - Junction:
- 150°C (Max)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-SOT363-PO
BAW56SH6327XTSA1 FAQ
1.How can I place an order for BAW56SH6327XTSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for BAW56SH6327XTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAW56SH6327XTSA1 reliable?
The price and inventory of BAW56SH6327XTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAW56SH6327XTSA1 is usually 5 days.
3.What payment methods are accepted for BAW56SH6327XTSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAW56SH6327XTSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAW56SH6327XTSA1?
BAW56SH6327XTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAW56SH6327XTSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAW56SH6327XTSA1?
For technical support, including BAW56SH6327XTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAW56SH6327XTSA1 requirements.
6.How does Aetrix verify that BAW56SH6327XTSA1 is sourced from the original manufacturer or authorized distributors?
All BAW56SH6327XTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAW56SH6327XTSA1 meets industry standards.
7.What is the process for return or replacement of BAW56SH6327XTSA1?
All BAW56SH6327XTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BAW56SH6327XTSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAW56SH6327XTSA1 part is unused and in its original packaging.
Return procedure for BAW56SH6327XTSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BAW56SH6327XTSA1 Tags
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BAV99-7-F
Diodes Incorporated
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BAT54C-7-F
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BAV99,215
Nexperia USA Inc.
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BAT54SLT1G
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BAV70LT1G
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BAT54CLT1G
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BAT54S-7-F
Diodes Incorporated
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BAV99LT1G
onsemi
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BAT54S,215
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BAS40-04LT1G
onsemi
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MMBD1503-TP
Micro Commercial Co
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BAV99WT1G
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