My Inquiry
My Account
Nexperia USA Inc. BAW56S-QF
- Part No.:
- BAW56S-QF
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Diode Arrays
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
BAW56S-QF.pdf
- Description:
- DIODE ARRAY GP 90V 250MA 6-TSSOP
- Quantity:
- Payment:
- Shipping:
Inventory:7,234
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
BAW56S-QF from Nexperia is a dual-common-anode high-speed switching diode array in SOT363-3 (TSSOP6) package, comprising four diodes configured as two independent common-anode pairs (A1/A2–K1/K2 and A3/A4–K3/K4), with trr ≤ 4 ns, Cd ≤ 2 pF, VR = 90 V, and qualified to AEC-Q101 for automotive signal routing and ESD protection in CAN/LIN bus interfaces.
For engineers reviewing the BAW56S-QF datasheet, BAW56S-QF pinout, BAW56S-QF application, or BAW56S-QF equivalent, this device supports high-frequency signal steering, low-capacitance transient suppression, and space-constrained dual-channel switching where fast recovery and automotive-grade reliability are required.
Technical Context
The BAW56S-QF integrates four discrete high-speed diodes in a single 6-pin TSSOP package, arranged as two electrically isolated common-anode dual-diode structures - enabling bidirectional clamping or dual-path signal conditioning without cross-talk. Its 4 ns reverse recovery time and 2 pF junction capacitance support operation up to ~100 MHz in digital signal paths.
Designed for automotive environments, it meets AEC-Q101 stress test requirements including temperature cycling, HTRB, and ESD (HBM ≥ 8 kV), with guaranteed operation from −65 °C to +150 °C junction temperature and 90 V repetitive peak reverse voltage per diode.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Voltage (VR) | 90 V - supports 24 V automotive supply rail transients and ISO 7637-2 pulse 1/2a suppression. |
| Reverse Recovery Time (trr) | ≤ 4 ns - enables clean switching in >50 MHz clock distribution and data line steering. |
| Junction Capacitance (Cd) | ≤ 2 pF at 0 V - minimizes signal loading on high-speed digital lines (e.g., LIN, CAN FD stubs). |
| Forward Voltage (VF) | 855 mV at 10 mA - ensures low conduction loss in active clamping and level-shifting circuits. |
| Reverse Leakage (IR) | ≤ 0.5 µA at 80 V, 25 °C - maintains signal integrity in high-impedance sensor interface nodes. |
| Thermal Resistance (Rth(j-sp)) | 255 K/W - enables 350 mW total power dissipation on standard FR4 PCB with single-sided copper. |
Pinout & Package
Package: SOT363-3 (TSSOP6), 1.3 mm × 2.2 mm × 0.95 mm body, 0.65 mm lead pitch, gull-wing leads, JEDEC-compliant footprint.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Cathode (Diode 1) | Output node for first common-anode pair; connects to signal path requiring clamping or rectification. |
| 2 | Cathode (Diode 2) | Independent cathode for Diode 1's counterpart; enables dual-signal routing from shared anode (Pin 6). |
| 3 | Common Anode (Diodes 3 & 4) | Shared anode terminal for second dual-diode section; used for bidirectional transient absorption or dual-rail referencing. |
| 4 | Cathode (Diode 3) | Cathode of second diode pair; routed to secondary signal line (e.g., backup CAN_H or LIN bus). |
| 5 | Cathode (Diode 4) | Complementary cathode to Pin 4; allows independent control or monitoring of second channel. |
| 6 | Common Anode (Diodes 1 & 2) | Primary shared anode node; ties to VCC or reference rail for active clamping or level translation. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive underhood and infotainment systems with full stress-test compliance (HTGB, TC, H3TRB). |
| Dual common-anode topology | Two independent 2-diode sections reduce board area by 40% vs. discrete SOD-323 solutions in dual-bus protection. |
| 4 ns trr with low Qrr | Minimizes switching loss and ringing in 10–100 MHz signal paths, critical for CAN FD and Ethernet PHY front-end protection. |
| 2 pF capacitance at 0 V | Preserves signal edge rate (tr < 1 ns degradation) on 50 Ω transmission lines up to 200 Mbps. |
| −65 °C to +150 °C operation | Supports extended-temperature deployment in engine control units (ECUs) and ADAS domain controllers. |
Applications
| Automotive LIN Bus Protection | CAN FD Signal Clamping |
|---|---|
|
Use Scenario: Protecting LIN transceiver I/O pins against load-dump transients and ESD events in body control modules. IC Role / Device Role / Timing Role: Dual-diode clamping network referenced to VBAT and GND, leveraging Pins 1/2+6 and 4/5+3 for bidirectional rail-to-rail suppression. Use Value: 4 ns recovery prevents latch-up during fast-edge LIN wakeup pulses (up to 20 kbps), while 2 pF capacitance avoids signal distortion. |
Use Scenario: Front-end transient suppression for CAN FD physical layer (up to 5 Mbps) in gateway ECUs. IC Role / Device Role / Timing Role: High-speed steering diode array providing low-capacitance overvoltage clamping on CAN_H/CAN_L lines. Use Value: 90 V VR rating handles ISO 16750-2 pulse 5a (120 V), and dual-section layout isolates differential pair noise coupling. |
| USB 2.0 Data Line ESD Protection | Digital I/O Level Translation |
|
Use Scenario: IEC 61000-4-2 Level 4 (±15 kV air/±8 kV contact) ESD protection for USB D+/D− lines in infotainment head units. IC Role / Device Role / Timing Role: Low-Cd dual-diode clamp referenced to 3.3 V and GND, using separate cathode terminals for minimal crosstalk. Use Value: 2 pF capacitance preserves USB 2.0 eye diagram integrity; AEC-Q101 ensures long-term reliability in thermal cycling environments. |
Use Scenario: Bidirectional logic-level shifting between 1.8 V microcontroller GPIOs and 5 V sensor interfaces in ADAS camera modules. IC Role / Device Role / Timing Role: Passive level translator using forward-biased diode drops (VF ≈ 0.85 V) across common-anode sections. Use Value: 4 ns trr enables clean transition at 10 MHz toggle rates; dual-section layout supports independent TX/RX path isolation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed dual-diode switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BAW56,115 (Nexperia) | Same die, but in SOT363 (non–SOT363-3) package; no AEC-Q101 qualification; trr = 4 ns, Cd = 2 pF. | Not approved for automotive use; suitable only for industrial or consumer-grade designs with relaxed qualification needs. | Select when AEC-Q101 is unnecessary and cost sensitivity outweighs automotive compliance requirements. |
| DMN2016LFG-7 (Diodes Inc.) | Single dual-diode in SOT-363; trr = 3.5 ns, Cd = 1.8 pF, VR = 80 V, AEC-Q101 qualified, but lacks dual-common-anode pinout. | Requires external anode tie for dual-cathode operation; less flexible for independent dual-channel clamping. | Choose when lower trr/Cd is prioritized over pinout flexibility and 90 V VR margin is not required. |
Compared with BAW56,115, the BAW56S-QF adds automotive qualification and tighter package dimensional control; versus DMN2016LFG-7, it provides native dual-common-anode routing for simplified PCB layout in multi-rail protection schemes.
Availability
BAW56S-QF is available at Aetrix Electronics and suitable for automotive LIN/CAN FD protection, USB 2.0 ESD suppression, and digital I/O level translation requiring stable component supply, long-lifecycle assurance, and AEC-Q101 traceability.
Supply support for BAW56S-QF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on essential efficiency technologies, delivering high-performance, reliable discrete and logic devices for automotive, industrial, and computing markets.
The BAW56S-QF belongs to Nexperia's AEC-Q101-qualified high-speed switching diode product line, engineered specifically for robust signal integrity and transient resilience in automotive communication buses and safety-critical subsystems.
FAQ
What is the maximum junction temperature and thermal resistance of the BAW56S-QF?
The BAW56S-QF has a maximum junction temperature (Tj) of 150 °C and a thermal resistance from junction to solder point (Rth(j-sp)) of 255 K/W when mounted on a standard FR4 PCB with single-sided copper and tin-plated finish. This allows continuous operation at 350 mW total power dissipation under defined board conditions.
How does the dual-common-anode configuration benefit circuit design?
The dual-common-anode structure (Pins 6 and 3) enables two independent, isolated dual-diode sections - allowing simultaneous clamping of two signal lines to separate reference rails without internal coupling. This simplifies layout for differential bus protection (e.g., CAN_H/CAN_L) and eliminates need for external anode traces or discrete components.
Is the BAW56S-QF suitable for 5 V or 3.3 V logic-level ESD protection?
Yes - its 2 pF capacitance at 0 V and ≤ 0.5 µA leakage at 80 V ensure minimal signal distortion on 5 V and 3.3 V digital lines. It is widely deployed in USB 2.0, LIN, and SPI interfaces where IEC 61000-4-2 Level 4 ESD immunity and sub-1 ns edge preservation are required.
Does the BAW56S-QF require external biasing or drive circuitry?
No - the BAW56S-QF is a passive high-speed switching diode array with no control inputs or bias requirements. It operates solely based on applied voltage polarity and magnitude relative to its anode/cathode terminals, making it compatible with all standard clamping, steering, and level-shifting topologies without additional drivers or power rails.
BAW56S-QF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Diode Configuration:
- 2 Pair Common Anode
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 90 V
- Current - Average Rectified (Io) (per Diode):
- 250mA
- Voltage - Forward (Vf) (Max) @ If:
- 1.25 V @ 150 mA
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 4 ns
- Current - Reverse Leakage @ Vr:
- 500 nA @ 80 V
- Operating Temperature - Junction:
- 150°C
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-TSSOP
BAW56S-QF FAQ
1.How can I place an order for BAW56S-QF through Aetrix?
Please submit a Request for Quotation (RFQ) for BAW56S-QF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAW56S-QF reliable?
The price and inventory of BAW56S-QF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAW56S-QF is usually 5 days.
3.What payment methods are accepted for BAW56S-QF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAW56S-QF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAW56S-QF?
BAW56S-QF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAW56S-QF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAW56S-QF?
For technical support, including BAW56S-QF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAW56S-QF requirements.
6.How does Aetrix verify that BAW56S-QF is sourced from the original manufacturer or authorized distributors?
All BAW56S-QF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAW56S-QF meets industry standards.
7.What is the process for return or replacement of BAW56S-QF?
All BAW56S-QF units undergo pre-shipment inspection (PSI). If there is an issue with BAW56S-QF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAW56S-QF part is unused and in its original packaging.
Return procedure for BAW56S-QF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BAW56S-QF Tags
-
BAV99-7-F
Diodes Incorporated
-
BAT54C-7-F
Diodes Incorporated
-
BAV99,215
Nexperia USA Inc.
-
BAT54SLT1G
onsemi
-
BAV70LT1G
onsemi
-
BAT54CLT1G
onsemi
-
BAT54S-7-F
Diodes Incorporated
-
BAV99LT1G
onsemi
-
BAT54S,215
Nexperia USA Inc.
-
BAS40-04LT1G
onsemi
-
MMBD1503-TP
Micro Commercial Co
-
BAV99WT1G
onsemi
Tech Hub
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
