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Nexperia USA Inc. BAW56SRA-QZ
- Part No.:
- BAW56SRA-QZ
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Diode Arrays
- Package:
- 6-XFDFN Exposed Pad
- Datasheet:
-
BAW56SRA-QZ.pdf
- Description:
- DIODE ARR GP 90V 375MA DFN1412-6
- Quantity:
- Payment:
- Shipping:
Inventory:7,894
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Product details
Overview
BAW56SRA-Q from Nexperia is a quad high-speed switching diode array with dual common-anode pairs (A1,2 and A3,4), housed in a DFN1412-6 (SOT1268) package. It delivers trr ≤ 4 ns reverse recovery time, VR = 90 V maximum reverse voltage, and Cd ≤ 2 pF capacitance per diode-enabling use in automotive signal routing, ESD-protected data line clamping, and high-frequency logic-level translation circuits.
For engineers reviewing the BAW56SRA-Q datasheet, BAW56SRA-Q pinout, BAW56SRA-Q application, or BAW56SRA-Q equivalent, this device supports AEC-Q101-compliant designs requiring compact, low-capacitance, fast-switching discrete diodes with defined common-anode topology for space-constrained PCB layouts and noise-sensitive digital interfaces.
Technical Context
This quad diode integrates four independent silicon switching diodes in a single ultra-small DFN1412-6 package, configured as two electrically isolated common-anode pairs (diodes 1+2 share A1,2; diodes 3+4 share A3,4). Each diode exhibits consistent VF = 1.25 V at IF = 150 mA and IR ≤ 0.5 µA at VR = 80 V.
The device operates across −55 °C to +150 °C ambient temperature, with thermal resistance Rth(j-a) = 305 K/W (FR4, standard footprint) and junction-to-solder-point Rth(j-sp) = 205 K/W-supporting reliable thermal performance in automotive under-hood and infotainment modules where power dissipation must remain below 410 mW per diode.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Voltage (VR) | 90 V - supports 24 V automotive supply rail transient suppression without breakdown. |
| Reverse Recovery Time (trr) | ≤ 4 ns - enables clean switching in >100 MHz digital signal paths and clock distribution networks. |
| Diode Capacitance (Cd) | ≤ 2 pF at 0 V - minimizes signal loading on high-speed data lines (e.g., CAN FD, LIN, SPI). |
| Forward Voltage (VF) | 1.25 V at 150 mA - ensures low conduction loss in active clamping and level-shifting applications. |
| Leakage Current (IR) | ≤ 0.5 µA at 80 V, 25 °C - maintains signal integrity in high-impedance sensing and bias networks. |
| Package | DFN1412-6 (SOT1268), 1.4 × 1.2 × 0.47 mm - fits 0402-class board area while enabling thermal pad soldering. |
Pinout & Package
DFN1412-6 (SOT1268) is a leadless, thermally enhanced ultra-thin plastic package with six terminals, 1.4 mm × 1.2 mm body size, and exposed anode thermal pad. Pin numbering follows top-side marking index (pin 1 = K1).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Cathode (Diode 1) | Output node for first diode in common-anode pair A1,2; routed to signal path requiring clamping or steering. |
| 2 | Cathode (Diode 2) | Independent cathode for second diode sharing A1,2 anode; enables dual-path protection or OR-ing. |
| 3 | Common Anode (Diodes 3 & 4) | Shared anode terminal for third and fourth diodes; connects to reference rail or bias source. |
| 4 | Cathode (Diode 3) | Third diode cathode; used in complementary signal path to Diode 4 within same anode group. |
| 5 | Cathode (Diode 4) | Fourth cathode; allows independent control of two diodes referenced to A3,4, supporting dual-channel isolation. |
| 6 | Common Anode (Diodes 1 & 2) | Shared anode for Diodes 1 and 2; ties both cathodes to single bias point for compact dual-diode operation. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Qualified for automotive applications including engine control units and ADAS sensor interfaces. |
| Dual common-anode topology | Reduces component count by 50% vs. discrete diodes in dual-rail clamping or bidirectional bus protection. |
| Ultra-low capacitance (≤2 pF) | Preserves signal edge rate in 100+ Mbps serial links without added jitter or reflection. |
| 4 ns reverse recovery | Eliminates tail current in high-frequency PWM-driven loads, preventing shoot-through in half-bridge gate drivers. |
| Thermally enhanced DFN package | Enables 610 mW total power dissipation with solderable anode pad-critical for sustained 150 mA operation. |
Applications
| Automotive CAN FD Transceiver Protection | High-Speed Logic-Level Translation |
|---|---|
|
Use Scenario: Protecting CAN FD transceiver I/O pins against ESD and load-dump transients in vehicle networking modules. IC Role / Device Role / Timing Role: Discrete clamping diode array providing low-capacitance, fast-response overvoltage protection on differential bus lines. Use Value: 2 pF capacitance avoids signal integrity degradation at 5 Mbps CAN FD data rates; 90 V VR withstands ISO 7637-2 Pulse 1/2a. |
Use Scenario: Translating 3.3 V logic signals to 5 V microcontroller inputs in infotainment head units. IC Role / Device Role / Timing Role: Passive level shifter using forward-biased diodes with controlled VF drop and minimal propagation delay. Use Value: 4 ns trr ensures sub-nanosecond timing alignment; dual common-anode structure simplifies PCB routing for paired signal channels. |
| USB 2.0 Data Line ESD Clamp | Automotive Sensor Signal Conditioning |
|
Use Scenario: Adding secondary ESD protection on USB 2.0 D+/D− lines downstream of integrated TVS arrays. IC Role / Device Role / Timing Role: Low-capacitance switching diode array clamping to VBUS and GND rails during ±8 kV HBM events. Use Value: 2 pF Cd prevents USB 2.0 eye diagram closure; AEC-Q101 rating ensures reliability in connected-car USB ports. |
Use Scenario: Biasing and protecting analog outputs from Hall-effect or IMU sensors in ADAS camera modules. IC Role / Device Role / Timing Role: Precision clamping diode limiting output swing to safe ADC input range while rejecting supply rail noise. Use Value: 0.5 µA IR at 80 V preserves µA-level sensor bias currents; 150 °C Tj rating matches under-hood operating environment. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar quad high-speed switching diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BAW56W-Q | Same die, but in SOT323 package (3.0 × 1.4 × 1.1 mm); higher Rth(j-a) = 380 K/W; no thermal pad. | Larger footprint; unsuitable for high-density automotive PCBs or thermally constrained modules. | Select when legacy SMT placement equipment lacks DFN1412-6 capability or thermal demands are lower. |
| NSR20F30NXT5G | Single dual-common-anode diode (2 diodes), 30 V VR, 1.5 ns trr, 0.8 pF Cd; DFN1006-3 package. | Lower voltage rating and fewer diodes; optimized for 3.3 V logic, not 24 V automotive systems. | Choose only for low-voltage, ultra-high-speed (<1 GHz) RF or clock path clamping-not for general automotive switching. |
Compared with BAW56W-Q, the BAW56SRA-Q offers 25% smaller footprint and superior thermal performance; versus NSR20F30NXT5G, it provides double the diode count and 3× higher VR-making it uniquely suited for AEC-Q101-compliant, multi-channel 24 V system protection.
Availability
BAW56SRA-Q is available at Aetrix Electronics and suitable for automotive ECU design, high-speed data interface protection, and compact sensor signal conditioning requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for BAW56SRA-Q includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability essential semiconductors-including diodes, MOSFETs, bipolar transistors, and ESD protection devices.
The BAW56SRA-Q belongs to Nexperia's AEC-Q101-qualified high-speed switching diode product line, engineered specifically for automotive signal integrity, ESD robustness, and space-constrained PCB integration.
FAQ
What is the maximum continuous forward current per diode in the BAW56SRA-Q?
The BAW56SRA-Q supports 375 mA per diode when mounted on FR4 PCB with standard footprint at Tamb = 25 °C. Derating applies above 25 °C: at 125 °C ambient, max continuous current drops to ~220 mA per diode per Fig. 1. This rating assumes single-diode conduction; simultaneous conduction of two diodes reduces per-diode limit to 220 mA.
How does the dual common-anode configuration affect PCB layout?
The dual common-anode structure (A1,2 and A3,4) requires separate anode traces for each pair-reducing net count versus four independent diodes but demanding careful thermal pad connection. Pin 3 and Pin 6 must be routed to distinct reference rails or bias sources; shared anode routing invalidates the intended isolation between diode pairs.
Is the BAW56SRA-Q suitable for bidirectional signal clamping?
No-it is configured exclusively for unidirectional clamping (anode-referenced). Each diode conducts only when its cathode is ≥ VF above its shared anode. For bidirectional protection, external series resistors and dual-rail connections (e.g., to VCC and GND) are required, leveraging the discrete cathodes (Pins 1, 2, 4, 5) with appropriate biasing.
What reflow profile is recommended for the DFN1412-6 package?
Nexperia specifies JEDEC J-STD-020-compliant reflow for SOT1268: peak temperature 260 °C, time above 217 °C = 40–90 s, ramp-up ≤ 3 °C/s. The footprint in Fig. 11 requires 0.43 mm wide solder lands and 0.27 mm solder paste stencil aperture to ensure void-free thermal pad wetting and mechanical reliability.
BAW56SRA-QZ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- 6-XFDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Diode Configuration:
- 2 Pair Common Anode
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 90 V
- Current - Average Rectified (Io) (per Diode):
- 375mA
- Voltage - Forward (Vf) (Max) @ If:
- 1.25 V @ 150 mA
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 4 ns
- Current - Reverse Leakage @ Vr:
- 500 nA @ 80 V
- Operating Temperature - Junction:
- 150°C
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DFN1412-6
BAW56SRA-QZ FAQ
1.How can I place an order for BAW56SRA-QZ through Aetrix?
Please submit a Request for Quotation (RFQ) for BAW56SRA-QZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAW56SRA-QZ reliable?
The price and inventory of BAW56SRA-QZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAW56SRA-QZ is usually 5 days.
3.What payment methods are accepted for BAW56SRA-QZ?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAW56SRA-QZ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAW56SRA-QZ?
BAW56SRA-QZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAW56SRA-QZ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAW56SRA-QZ?
For technical support, including BAW56SRA-QZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAW56SRA-QZ requirements.
6.How does Aetrix verify that BAW56SRA-QZ is sourced from the original manufacturer or authorized distributors?
All BAW56SRA-QZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAW56SRA-QZ meets industry standards.
7.What is the process for return or replacement of BAW56SRA-QZ?
All BAW56SRA-QZ units undergo pre-shipment inspection (PSI). If there is an issue with BAW56SRA-QZ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAW56SRA-QZ part is unused and in its original packaging.
Return procedure for BAW56SRA-QZ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BAW56SRA-QZ Tags
-
BAV99-7-F
Diodes Incorporated
-
BAT54C-7-F
Diodes Incorporated
-
BAV99,215
Nexperia USA Inc.
-
BAT54SLT1G
onsemi
-
BAV70LT1G
onsemi
-
BAT54CLT1G
onsemi
-
BAT54S-7-F
Diodes Incorporated
-
BAV99LT1G
onsemi
-
BAT54S,215
Nexperia USA Inc.
-
BAS40-04LT1G
onsemi
-
MMBD1503-TP
Micro Commercial Co
-
BAV99WT1G
onsemi
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