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Nexperia USA Inc. BAW56SRAZ
- Part No.:
- BAW56SRAZ
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Diode Arrays
- Package:
- 6-XFDFN Exposed Pad
- Datasheet:
-
BAW56SRAZ.pdf
- Description:
- DIODE ARR GP 90V 375MA DFN1412-6
- Quantity:
- Payment:
- Shipping:
Inventory:4,890
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Product details
Overview
BAW56SRA from Nexperia is a quad high-speed switching diode array with dual common-anode pairs (diodes 1&2 share A1,2; diodes 3&4 share A3,4), housed in a DFN1412-6 (SOT1268) package. It delivers trr ≤ 4 ns, VR = 90 V, VF = 1.25 V @ 150 mA, Cd ≤ 2 pF, and IF = 375 mA per diode - enabling compact, low-capacitance signal routing in high-frequency digital interfaces.
For engineers reviewing the BAW56SRA datasheet, BAW56SRA pinout, BAW56SRA application, or BAW56SRA equivalent, this device is selected for space-constrained designs requiring four independently switchable diodes with sub-4 ns recovery, ultra-low junction capacitance, and thermal performance validated on FR4 PCBs with standard footprints.
Technical Context
The BAW56SRA integrates four discrete silicon switching diodes in a single leadless DFN package, configured as two independent common-anode dual-diode structures. Its architecture supports parallel or independent cathode routing while sharing anode terminals per pair - optimizing board layout for bidirectional clamping or logic-level translation.
Designed for operation up to 150 °C junction temperature, it exhibits thermally stable reverse leakage (IR = 150 µA @ VR = 80 V, Tj = 150 °C) and defined transient thermal impedance (Zth(j-a) = 40 K/W to solder point), making it suitable for thermally demanding consumer and industrial power-rail protection circuits.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Voltage (VR) | 90 V - supports rail-to-rail clamping on 48 V and 36 V systems without breakdown. |
| Reverse Recovery Time (trr) | 4 ns - enables reliable operation in >100 MHz digital signal steering and pulse shaping. |
| Forward Voltage (VF) | 1.25 V @ 150 mA - minimizes conduction loss in low-voltage logic interface protection paths. |
| Junction Capacitance (Cd) | 2 pF @ 0 V - preserves signal integrity in RF-coupled or high-speed data line applications. |
| Forward Current (IF) | 375 mA per diode - sufficient for driving LED indicators, optocoupler inputs, or small-signal relay coils. |
| Thermal Resistance (Rth(j-sp)) | 205 K/W - ensures predictable junction temperature rise when soldered to 1 cm² cathode copper pad on FR4. |
Pinout & Package
Package: DFN1412-6 (SOT1268), 1.4 mm × 1.2 mm × 0.47 mm body, leadless, surface-mount plastic package with exposed thermal pad on anode side.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | K1 | Cathode of diode 1 - routed separately for independent switching control. |
| 2 | K2 | Cathode of diode 2 - shares anode (pin 6/7) with K1 for dual-channel common-anode configuration. |
| 3 | A3,4 | Common anode of diodes 3 and 4 - electrically tied pins 3 and 8 provide redundant thermal and current paths. |
| 4 | K3 | Cathode of diode 3 - isolated from K1/K2, enabling independent signal path routing. |
| 5 | K4 | Cathode of diode 4 - shares anode (pin 3/8) with K3 for second dual-diode group. |
| 6 & 7 | A1,2 | Common anode of diodes 1 and 2 - pins 6 and 7 are internally bonded and must be connected together on PCB. |
Key Features
| Feature | Design Value |
|---|---|
| Quad diode integration | Four discrete high-speed diodes in one 1.4 mm × 1.2 mm footprint - reduces PCB area by ~60% vs. four SOT23 diodes. |
| Sub-4 ns reverse recovery | trr ≤ 4 ns under standardized test conditions (IF = IR = 10 mA, RL = 100 Ω) - eliminates ringing in fast edge-rate digital lines. |
| Low leakage at high temp | IR = 150 µA @ VR = 80 V, Tj = 150 °C - maintains signal fidelity in automotive under-hood or industrial ambient environments. |
| Thermally optimized anode tab | Rth(j-sp) = 205 K/W to solder point - enables direct thermal coupling to PCB copper for sustained 220 mA double-diode load. |
Applications
| USB Data Line Protection | Logic-Level Translation |
|---|---|
Use Scenario: Bidirectional ESD and overvoltage protection on USB 2.0 D+/D− lines in portable devices. IC Role / Device Role / Timing Role: High-speed clamping diode array shunting transients to VBUS or GND while preserving 480 Mbps signal integrity. Use Value: 2 pF capacitance and 4 ns trr prevent data eye closure; dual common-anode structure allows shared VBUS connection for both lines. | Use Scenario: Level-shifting between 3.3 V microcontroller GPIO and 5 V peripheral I/O in embedded controllers. IC Role / Device Role / Timing Role: Passive diode-based level translator using forward voltage drop to shift logic thresholds. Use Value: Matched VF (1.25 V typ.) across all four diodes ensures consistent translation offset; low trr avoids timing skew between channels. |
| High-Frequency Signal Routing | LED Indicator Multiplexing |
Use Scenario: Selective routing of clock or data signals between multiple ICs in FPGA-based test equipment. IC Role / Device Role / Timing Role: High-speed analog switch replacement where low capacitance and fast turn-off minimize crosstalk. Use Value: 2 pF Cd and 4 ns trr enable clean signal switching up to 250 MHz; quad configuration supports 2×2 crosspoint routing. | Use Scenario: Driving eight LEDs from four MCU pins using multiplexed common-anode topology. IC Role / Device Role / Timing Role: Cathode-side switching element allowing individual LED control while sharing anode supply rails. Use Value: 375 mA per diode supports bright LED drive; dual common-anode pairs simplify PCB routing for 4×2 LED matrix. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed switching diode array applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BAV99W | Single-pair dual diode (2 diodes), SOT323 package, trr = 4 ns, Cd = 2 pF, VR = 70 V | Lacks quad configuration and common-anode pairing - requires two devices for equivalent channel count. | Select when only two diodes are needed and SOT323 footprint is preferred. |
| NSR0230P2T5G | Single Schottky diode, SOD-523, VF = 0.35 V @ 200 mA, trr not specified (Schottky), VR = 30 V | No common-anode grouping; lower VR limits use to ≤3.3 V systems; lacks quad integration. | Select for ultra-low VF in low-voltage bias networks where reverse recovery is irrelevant. |
Compared with BAV99W and NSR0230P2T5G, the BAW56SRA uniquely provides four high-speed diodes with dual common-anode topology in a 1.4 mm × 1.2 mm footprint - delivering higher integration density, 90 V reverse capability, and verified 4 ns trr for mixed-signal routing where channel count and layout efficiency are critical.
Availability
BAW56SRA is available at Aetrix Electronics and suitable for USB data line protection, logic-level translation, high-frequency signal routing, and LED indicator multiplexing requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for BAW56SRA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability essential semiconductors - including diodes, MOSFETs, bipolar transistors, and ESD protection devices.
The BAW56SRA belongs to Nexperia's high-speed switching diode product line, engineered specifically for compact, high-frequency signal conditioning and protection in space-constrained consumer, computing, and industrial electronics.
FAQ
What is the maximum continuous forward current rating per diode in the BAW56SRA?
The BAW56SRA is rated for 375 mA continuous forward current per diode when mounted on an FR4 PCB with single-sided copper and standard footprint. Derating applies above 25 °C ambient: at 75 °C, max IF drops to ~220 mA for single-diode operation, and to 150 mA for simultaneous double-diode loading per common anode group.
Can the BAW56SRA be used in automotive applications?
No - the BAW56SRA is explicitly marked as non-automotive qualified in its revision history (v.3, 2025). It has not undergone AEC-Q101 stress testing or qualification. For automotive use, Nexperia offers the -Q qualified variant (e.g., BAW56SRA-Q), which includes extended temperature validation and enhanced reliability screening.
How are pins 6 and 7 electrically connected in the BAW56SRA?
Pins 6 and 7 are internally bonded to the same A1,2 common anode node and must be connected together on the PCB. They serve as redundant anode terminals for diodes 1 and 2 - improving current handling and thermal dissipation. Leaving either pin unconnected degrades thermal performance and violates the recommended mounting configuration per Nexperia's SOT1268 footprint guidelines.
Is the BAW56SRA pin-compatible with the BAW56 series in SOT363 packages?
No - the BAW56SRA uses a 6-pin DFN1412-6 (SOT1268) package with dual common-anode pinout (A1,2 on pins 6/7; A3,4 on pins 3/8), whereas SOT363-packaged BAW56 variants have different pin assignments (e.g., A1,2 on pin 1; K1–K4 on pins 2–5). Layout redesign and schematic updates are required for migration.
BAW56SRAZ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- 6-XFDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Diode Configuration:
- 2 Pair Common Anode
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 90 V
- Current - Average Rectified (Io) (per Diode):
- 375mA (DC)
- Voltage - Forward (Vf) (Max) @ If:
- 1.25 V @ 150 mA
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 4 ns
- Current - Reverse Leakage @ Vr:
- 500 nA @ 80 V
- Operating Temperature - Junction:
- 150°C (Max)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DFN1412-6
BAW56SRAZ FAQ
1.How can I place an order for BAW56SRAZ through Aetrix?
Please submit a Request for Quotation (RFQ) for BAW56SRAZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAW56SRAZ reliable?
The price and inventory of BAW56SRAZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAW56SRAZ is usually 5 days.
3.What payment methods are accepted for BAW56SRAZ?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAW56SRAZ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAW56SRAZ?
BAW56SRAZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAW56SRAZ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAW56SRAZ?
For technical support, including BAW56SRAZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAW56SRAZ requirements.
6.How does Aetrix verify that BAW56SRAZ is sourced from the original manufacturer or authorized distributors?
All BAW56SRAZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAW56SRAZ meets industry standards.
7.What is the process for return or replacement of BAW56SRAZ?
All BAW56SRAZ units undergo pre-shipment inspection (PSI). If there is an issue with BAW56SRAZ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAW56SRAZ part is unused and in its original packaging.
Return procedure for BAW56SRAZ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BAW56SRAZ Tags
-
BAV99-7-F
Diodes Incorporated
-
BAT54C-7-F
Diodes Incorporated
-
BAV99,215
Nexperia USA Inc.
-
BAT54SLT1G
onsemi
-
BAV70LT1G
onsemi
-
BAT54CLT1G
onsemi
-
BAT54S-7-F
Diodes Incorporated
-
BAV99LT1G
onsemi
-
BAT54S,215
Nexperia USA Inc.
-
BAS40-04LT1G
onsemi
-
MMBD1503-TP
Micro Commercial Co
-
BAV99WT1G
onsemi
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