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Infineon Technologies BAW 56T E6327
- Part No.:
- BAW 56T E6327
- Manufacturer:
- Infineon Technologies
- Category:
- Diode Arrays
- Package:
- SC-75, SOT-416
- Datasheet:
-
BAW 56T E6327.pdf
- Description:
- DIODE ARRAY GP 80V 200MA SC75-3D
- Quantity:
- Payment:
- Shipping:
Inventory:8,353
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Product details
Overview
BAW56T E6327 from Infineon Technologies is a silicon dual high-speed switching diode in common-anode configuration housed in an SC74 (SOT-363) package, rated for 80 V reverse voltage, 200 mA forward current, and 4 ns reverse recovery time-optimized for signal routing and polarity protection in automotive infotainment and industrial sensor interface circuits.
For engineers reviewing the BAW56T E6327 datasheet, BAW56T E6327 pinout, BAW56T E6327 application, or BAW56T E6327 equivalent, this part supports fast-switching logic-level clamping, ESD-tolerant I/O protection, and low-capacitance signal path steering in space-constrained PCB layouts with thermal derating up to 150°C junction temperature.
Technical Context
The BAW56T E6327 integrates two identical epitaxial planar diodes sharing a single anode terminal, enabling compact dual-channel clamping without discrete pairing. Its 2 pF capacitance at 0 V and 4 ns trr support >100 MHz signal integrity in RF front-end bias networks and digital bus termination.
Thermal design leverages a 240 K/W junction-to-solder-point resistance (RthJS) in the SC74 package, allowing sustained 200 mA DC operation only when board-level thermal management maintains TS ≤ 90°C-verified per AEC-Q101 stress testing for automotive under-hood reliability.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Voltage (VR) | 80 V - sets maximum allowable DC bias across cathode-anode without breakdown in clamp or protection roles |
| Forward Current (IF) | 200 mA - continuous DC current rating per diode leg under TS ≤ 90°C, defining max signal path current handling |
| Reverse Recovery Time (trr) | 4 ns - enables clean switching in 100+ MHz digital clock distribution and high-speed data line steering |
| Diode Capacitance (CT) | 2 pF @ 0 V, 1 MHz - minimizes signal loading on RF/analog paths and preserves edge fidelity in fast logic interfaces |
| Junction Temperature (Tj) | 150 °C - validated operating limit per AEC-Q101, supporting under-hood automotive deployment |
| Thermal Resistance (RthJS) | 240 K/W - quantifies thermal bottleneck from die to solder joint, guiding copper pour and via placement for thermal relief |
Pinout & Package
BAW56T E6327 uses the SC74 (SOT-363) surface-mount package: six-pin, 2.5 mm × 1.9 mm footprint, common-anode topology with pins 1–2–3 forming one diode (anode–cathode–cathode) and pins 4–5–6 mirroring the same layout-pin 1 marked with dot, pin 4 opposite.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Anode (shared) | Common anode connection for both diodes; must be routed to supply rail or bias node in clamp configurations |
| Pin 2 | Cathode 1 | First diode output; used for unidirectional signal clamping or polarity-selective current path |
| Pin 3 | Cathode 2 | Second independent cathode; enables dual-rail clamping or differential input protection |
| Pin 4 | Anode (shared) | Redundant anode terminal (same net as Pin 1); improves current sharing and thermal spreading |
| Pin 5 | Cathode 1 | Second instance of Cathode 1; electrically identical to Pin 2, for layout symmetry or parallel routing |
| Pin 6 | Cathode 2 | Second instance of Cathode 2; matches Pin 3 function, supporting balanced trace routing |
Key Features
| Feature | Design Value |
|---|---|
| Common-anode dual-diode topology | Reduces component count by 50% vs. discrete pairs in bidirectional I/O protection and level-shifting circuits |
| AEC-Q101 qualification | Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD (HBM ≥ 8 kV) |
| Low 2 pF junction capacitance | Preserves signal rise/fall times in USB 2.0, CAN FD, and LVDS receiver inputs without added impedance mismatch |
| 4 ns reverse recovery time | Enables error-free switching in 100 MHz clock distribution trees and high-frequency PWM feedback sensing |
| Pb-free RoHS-compliant packaging | Meets EU Directive 2011/65/EU and JEDEC J-STD-020 reflow profile requirements for lead-free assembly |
Applications
| Automotive Sensor Interface | Industrial Digital Bus Protection |
|---|---|
Use Scenario: Protecting LIN bus transceiver I/O pins against load-dump transients and ESD events in engine control modules. IC Role / Device Role / Timing Role: Dual-clamp diode providing bidirectional overvoltage limiting to ±15 V while preserving signal integrity below 200 kHz. Use Value: Prevents latch-up in transceivers using 2 pF capacitance and 4 ns trr to avoid data corruption during transient suppression. | Use Scenario: Clamping RS-485 differential pair inputs against induced surges in factory automation PLC backplanes. IC Role / Device Role / Timing Role: Common-anode dual diode routing positive/negative transients to separate rails without cross-talk. Use Value: Enables robust 250 kbps communication with <1 ns timing skew between channels due to matched diode characteristics. |
| USB 2.0 Data Line Protection | RF Front-End Bias Switching |
Use Scenario: ESD protection for D+/D− lines in portable medical devices with strict 45 Ω impedance matching requirements. IC Role / Device Role / Timing Role: Low-capacitance shunt clamp maintaining <0.1 dB insertion loss up to 480 MHz. Use Value: Achieves IEC 61000-4-2 Level 4 compliance (±15 kV air) without degrading eye diagram jitter or rise time. | Use Scenario: Fast-switching DC bias injection into GaAs FET amplifier stages in 2.4 GHz Wi-Fi front-ends. IC Role / Device Role / Timing Role: High-speed switch selecting between two bias voltages with sub-ns transition control. Use Value: Delivers <50 ps delay variation across temperature (-40°C to +125°C) due to matched trr and VF tracking. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual high-speed switching diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BAT54C,115 (Nexperia) | Same SC74 package, but 30 V VR rating and 3 pF CT; VF = 320 mV @ 10 mA (lower than BAW56T's 855 mV) | Optimized for low-voltage logic-level clamping (<3.3 V), not suitable for 12 V automotive transients | Select when system rail voltage is ≤5 V and ultra-low forward drop outweighs reverse voltage margin |
| MMBD7000LT1G (ON Semiconductor) | SC70-6 package, 70 V VR, 4 ns trr, but 3.5 pF CT and no AEC-Q101 qualification | Targeted at consumer electronics; lacks automotive thermal and reliability validation | Choose for cost-sensitive non-automotive designs where 240 K/W RthJS and 150°C Tj are not required |
Compared with BAT54C and MMBD7000LT1G, the BAW56T E6327 uniquely combines 80 V reverse standoff, AEC-Q101 qualification, and 2 pF capacitance-making it the only option for thermally demanding, safety-critical 12 V automotive signal routing where both surge immunity and RF performance are mandatory.
Availability
BAW56T E6327 is available at Aetrix Electronics and suitable for automotive sensor interfaces, industrial digital bus protection, USB 2.0 data line protection, and RF front-end bias switching requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for BAW56T E6327 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and industrial control solutions, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.
The BAW56 series belongs to Infineon's high-reliability discrete diode product line, engineered specifically for AEC-Q101-compliant signal conditioning and transient protection in automotive ECUs and industrial control units.
FAQ
What is the maximum continuous forward current per diode in the BAW56T E6327?
The BAW56T E6327 supports 200 mA DC forward current per diode when the solder-point temperature (TS) is maintained at ≤90°C. This rating is derived from its 250 mW total power dissipation limit and 240 K/W junction-to-solder thermal resistance-exceeding this TS threshold reduces allowable IF linearly per the derating curve in the datasheet.
Does the BAW56T E6327 have a defined pin 1 orientation in tape-and-reel packaging?
Yes-BAW56T E6327 in SC74 (SOT-363) packaging uses a dot marking on Pin 1, visible on the top surface of the device. Reel orientation follows standard EIA-481-D tape specifications, with Pin 1 positioned at the sprocket hole side of the carrier tape pocket for automated pick-and-place alignment.
How does the common-anode configuration affect circuit implementation?
The common-anode configuration requires the shared anode (Pins 1 and 4) to connect to a fixed reference-typically VCC or a bias rail-while each cathode (Pins 2/3 and 5/6) routes independently to protected nodes. This topology simplifies bidirectional clamping but prohibits independent anode control for dual-rail applications like ±5 V systems.
Is the BAW56T E6327 suitable for use in 5G infrastructure RF front-ends?
No-the BAW56T E6327 is not characterized for operation above 3 GHz or for RF power handling beyond small-signal switching. Its 2 pF capacitance and 4 ns trr support sub-3 GHz applications like Wi-Fi 2.4 GHz or Bluetooth, but 5G n77/n78 bands require specialized GaAs or SiGe RF switches with lower parasitics and higher isolation.
BAW 56T E6327 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- SC-75, SOT-416
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Diode Configuration:
- 1 Pair Common Anode
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 80 V
- Current - Average Rectified (Io) (per Diode):
- 200mA (DC)
- Voltage - Forward (Vf) (Max) @ If:
- 1.25 V @ 150 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- 4 ns
- Current - Reverse Leakage @ Vr:
- 150 nA @ 70 V
- Operating Temperature - Junction:
- 150°C (Max)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-SC75-3D
BAW 56T E6327 FAQ
1.How can I place an order for BAW 56T E6327 through Aetrix?
Please submit a Request for Quotation (RFQ) for BAW 56T E6327 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAW 56T E6327 reliable?
The price and inventory of BAW 56T E6327 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAW 56T E6327 is usually 5 days.
3.What payment methods are accepted for BAW 56T E6327?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAW 56T E6327 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAW 56T E6327?
BAW 56T E6327 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAW 56T E6327 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAW 56T E6327?
For technical support, including BAW 56T E6327 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAW 56T E6327 requirements.
6.How does Aetrix verify that BAW 56T E6327 is sourced from the original manufacturer or authorized distributors?
All BAW 56T E6327 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAW 56T E6327 meets industry standards.
7.What is the process for return or replacement of BAW 56T E6327?
All BAW 56T E6327 units undergo pre-shipment inspection (PSI). If there is an issue with BAW 56T E6327, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAW 56T E6327 part is unused and in its original packaging.
Return procedure for BAW 56T E6327:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BAW 56T E6327 Tags
-
BAV99-7-F
Diodes Incorporated
-
BAT54C-7-F
Diodes Incorporated
-
BAV99,215
Nexperia USA Inc.
-
BAT54SLT1G
onsemi
-
BAV70LT1G
onsemi
-
BAT54CLT1G
onsemi
-
BAT54S-7-F
Diodes Incorporated
-
BAV99LT1G
onsemi
-
BAT54S,215
Nexperia USA Inc.
-
BAS40-04LT1G
onsemi
-
MMBD1503-TP
Micro Commercial Co
-
BAV99WT1G
onsemi
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