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Infineon Technologies BAW56UE6327HTSA1
- Part No.:
- BAW56UE6327HTSA1
- Manufacturer:
- Infineon Technologies
- Category:
- Diode Arrays
- Package:
- SC-74, SOT-457
- Datasheet:
-
BAW56UE6327HTSA1.pdf
- Description:
- DIODE ARRAY GP 80V 200MA SC74-6
- Quantity:
- Payment:
- Shipping:
Inventory:5,588
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Product details
Overview
BAW56UE6327HTSA1 from Infineon Technologies is a silicon double diode in common-anode configuration, rated for 80 V reverse voltage, 200 mA forward current, and 4 ns reverse recovery time-optimized for high-speed switching in signal routing, ESD protection clamping, and RF detector circuits.
For engineers reviewing the BAW56UE6327HTSA1 datasheet, BAW56UE6327HTSA1 pinout, BAW56UE6327HTSA1 application, or BAW56UE6327HTSA1 equivalent, key selection criteria include reverse recovery time, junction-to-soldering-point thermal resistance (240 K/W), low capacitance (2 pF), and AEC-Q101 qualification for automotive signal path use.
Technical Context
This dual diode operates with shared anode connection enabling compact bidirectional clamping or series-switched signal paths. Its 2 pF capacitance at 0 V and 4 ns trr support >100 MHz switching in RF front-ends and high-frequency logic interface protection.
The device uses SC74 (SOT-363) package with six terminals: pins 1/2/3 form one diode (anode–cathode–cathode), pins 4/5/6 form the second (anode–cathode–cathode), sharing internal anode node-confirmed by Infineon's marking layout and footprint diagram.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Voltage (VR) | 80 V - supports clamping of transient surges up to 80 V in 12 V automotive data lines |
| Reverse Recovery Time (trr) | 4 ns - enables clean switching in 100+ MHz RF detector and mixer bias networks |
| Diode Capacitance (CT) | 2 pF @ 0 V, 1 MHz - minimizes signal loading in high-impedance antenna switch paths |
| Forward Current (IF) | 200 mA - sufficient for continuous DC bias and pulsed clamp duty in CAN/LIN transceivers |
| Junction-to-Soldering Point RthJS | 240 K/W - defines thermal derating slope when mounted on 2-layer PCB with 1 cm² copper pad |
| AEC-Q101 Qualified | Yes - validated for automotive-grade reliability in under-hood infotainment and body control modules |
Pinout & Package
BAW56UE6327HTSA1 is housed in SC74 (SOT-363) package: 2.9 mm × 1.9 mm × 1.1 mm, 6-pin surface-mount, lead-free, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Anode of Diode 1 | Shared anode node for both diodes; connects to system ground or bias rail |
| Pin 2 | Cathode of Diode 1 | Signal input/output terminal for first diode path (e.g., USB D+ line) |
| Pin 3 | Cathode of Diode 2 | Signal input/output terminal for second diode path (e.g., USB D− line) |
| Pin 4 | Anode of Diode 2 | Internally bonded to Pin 1 - not separately accessible |
| Pin 5 | Cathode of Diode 1 | Redundant cathode connection; electrically identical to Pin 2 |
| Pin 6 | Cathode of Diode 2 | Redundant cathode connection; electrically identical to Pin 3 |
Key Features
| Feature | Design Value |
|---|---|
| Common-anode dual-diode topology | Enables symmetrical bidirectional ESD clamping on differential pairs without external wiring |
| 4 ns reverse recovery time | Preserves signal integrity in >100 MHz clock distribution and RF sampling circuits |
| 2 pF junction capacitance | Reduces insertion loss below −0.2 dB at 500 MHz in 50 Ω matched paths |
| AEC-Q101 qualification | Validated for 1000-hour HTOL, temperature cycling, and mechanical shock per automotive stress profiles |
Applications
| USB 2.0 Data Line Protection | Automotive LIN Bus Interface |
|---|---|
Use Scenario: Protecting D+ and D− lines against ±15 kV contact ESD per IEC 61000-4-2. IC Role / Device Role / Timing Role: Dual-clamp diode array providing low-capacitance path to ground during ESD event. Use Value: 2 pF capacitance avoids signal rise-time degradation; 4 ns trr prevents latch-up during fast transients. | Use Scenario: Bidirectional signal conditioning and transient suppression on single-wire LIN bus nodes. IC Role / Device Role / Timing Role: Common-anode pair clamps positive and negative spikes while preserving 19.2 kbps data timing. Use Value: 80 V VR rating covers load-dump induced overvoltage; AEC-Q101 ensures lifetime reliability in cabin modules. |
| RF Detector Bias Network | Digital Logic Level Translation |
Use Scenario: Providing temperature-stable DC bias to Schottky detector diodes in 900 MHz ISM-band receivers. IC Role / Device Role / Timing Role: Low-leakage (0.15 µA @ 70 V) current source for detector anode biasing. Use Value: 0.15 µA IR at 70 V ensures minimal detector offset drift across −40°C to +125°C. | Use Scenario: Isolating 3.3 V microcontroller GPIOs from 5 V peripheral logic while enabling level-shifted communication. IC Role / Device Role / Timing Role: Series-switching diode pair controlling direction of level translation via anode bias control. Use Value: 200 mA IF rating supports sustained 10 mA logic drive; 1.25 V VF @ 150 mA ensures <100 mV drop at full load. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual high-speed switching diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BAT54C,315 (Nexperia) | Same SOT-363 package, but 30 V VR and 1.2 ns trr - faster but lower voltage rating | Preferred for sub-24 V logic-level translation; unsuitable for 12 V automotive surge clamping | Select when speed > voltage rating; verify 30 V VR suffices for system max transient |
| MMBD7000LT1G (ON Semiconductor) | Same 80 V VR and 4 ns trr, but SOT-23-6 package with different pinout (no shared anode) | Requires external anode tie; less compact layout for differential clamping | Choose only if SC74 footprint unavailable; rework required for common-anode functionality |
Compared with BAT54C and MMBD7000LT1G, BAW56UE6327HTSA1 uniquely combines 80 V rating, 4 ns trr, and true integrated common-anode structure in SC74-enabling space-constrained, automotive-grade differential clamping without layout compromise.
Availability
BAW56UE6327HTSA1 is available at Aetrix Electronics and suitable for USB 2.0 interface protection, automotive LIN bus nodes, and RF detector bias networks requiring stable component supply and AEC-Q101 compliance.
Supply support for BAW56UE6327HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and discrete devices, with global manufacturing and quality certification to ISO/TS 16949.
BAW56UE6327HTSA1 belongs to Infineon's BAW56 family of high-speed switching diodes, designed specifically for automotive signal integrity and ESD robustness in harsh electrical environments.
FAQ
What is the maximum allowable junction temperature for BAW56UE6327HTSA1?
The absolute maximum junction temperature is 150°C, verified per Infineon's datasheet Section 2. Maximum Ratings. Operation above this limit risks permanent parametric shift or metallization failure. Derating begins at 90°C ambient for continuous 200 mA operation due to its 240 K/W RthJS and 250 mW Ptot rating at TS ≤ 90°C.
Is BAW56UE6327HTSA1 pin-compatible with BAW56S or BAW56W variants?
No - although all share SC74/SOT-363 mechanical outline, BAW56UE6327HTSA1 (U variant) has distinct thermal design: 240 K/W RthJS and 250 mW Ptot at TS ≤ 90°C, versus 260 K/W for BAW56S and 190 K/W for BAW56W. Pin function is identical, but thermal performance and power handling differ.
Does the common-anode configuration support independent cathode control?
Yes - Pins 2 and 3 serve as independent cathodes for each diode, while Pins 1 and 4 are internally shorted as the shared anode. This allows separate signal routing to each cathode (e.g., D+ and D−) with unified anode bias, enabling true differential clamping without external traces.
Can BAW56UE6327HTSA1 be used in 5 V logic-level translation circuits?
Yes - with VF = 1.25 V at 150 mA, it provides reliable level shifting between 3.3 V and 5 V domains. Its 200 mA IF rating supports typical GPIO sink currents, and 2 pF capacitance avoids timing skew in ≤10 MHz digital signals. Confirm system-level noise margin accounts for forward voltage drop.
BAW56UE6327HTSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- SC-74, SOT-457
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Diode Configuration:
- 2 Pair Common Anode
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 80 V
- Current - Average Rectified (Io) (per Diode):
- 200mA (DC)
- Voltage - Forward (Vf) (Max) @ If:
- 1.25 V @ 150 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- 4 ns
- Current - Reverse Leakage @ Vr:
- 150 nA @ 70 V
- Operating Temperature - Junction:
- 150°C (Max)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-SC74-6
BAW56UE6327HTSA1 FAQ
1.How can I place an order for BAW56UE6327HTSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for BAW56UE6327HTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAW56UE6327HTSA1 reliable?
The price and inventory of BAW56UE6327HTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAW56UE6327HTSA1 is usually 5 days.
3.What payment methods are accepted for BAW56UE6327HTSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAW56UE6327HTSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAW56UE6327HTSA1?
BAW56UE6327HTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAW56UE6327HTSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAW56UE6327HTSA1?
For technical support, including BAW56UE6327HTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAW56UE6327HTSA1 requirements.
6.How does Aetrix verify that BAW56UE6327HTSA1 is sourced from the original manufacturer or authorized distributors?
All BAW56UE6327HTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAW56UE6327HTSA1 meets industry standards.
7.What is the process for return or replacement of BAW56UE6327HTSA1?
All BAW56UE6327HTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BAW56UE6327HTSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAW56UE6327HTSA1 part is unused and in its original packaging.
Return procedure for BAW56UE6327HTSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BAW56UE6327HTSA1 Tags
-
BAV99-7-F
Diodes Incorporated
-
BAT54C-7-F
Diodes Incorporated
-
BAV99,215
Nexperia USA Inc.
-
BAT54SLT1G
onsemi
-
BAV70LT1G
onsemi
-
BAT54CLT1G
onsemi
-
BAT54S-7-F
Diodes Incorporated
-
BAV99LT1G
onsemi
-
BAT54S,215
Nexperia USA Inc.
-
BAS40-04LT1G
onsemi
-
MMBD1503-TP
Micro Commercial Co
-
BAV99WT1G
onsemi
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