Nexperia USA Inc. BAW56W,135

Overview

BAW56W from Nexperia is a dual high-speed switching diode in common-anode configuration, housed in an SOT323 (SC-70) package. It delivers trr ≤ 4 ns reverse recovery time, Cd ≤ 2 pF capacitance, and VR = 90 V, enabling reliable operation in RF detector and high-frequency signal routing circuits.

For engineers reviewing the BAW56W datasheet, BAW56W pinout, BAW56W application, or BAW56W equivalent, key selection criteria include reverse recovery speed under IF = 10 mA/IR = 10 mA conditions, low-leakage performance at 80 V bias, thermal resistance to ambient (625 K/W), and compatibility with reflow-soldered SC-70 footprints.

Technical Context

The BAW56W integrates two independent silicon switching diodes sharing a common anode terminal, forming a compact dual-diode topology optimized for signal steering and clamping in high-frequency analog and digital interfaces. Its design targets minimal charge storage and fast minority-carrier sweep-out.

Reverse recovery behavior is characterized under standardized test conditions (IF = 10 mA, IR = 10 mA, RL = 100 Ω, IR(meas) = 1 mA, Tamb = 25 °C), ensuring consistent timing performance across production lots. The device operates within a junction temperature range of –65 °C to 150 °C.

Key Specifications

Pinout & Package

Package: SOT323 (SC-70), plastic surface-mounted, 3-lead, 1.3 mm pitch, 2.0 mm × 1.25 mm × 0.95 mm body.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed dual-diode applications.

Compared with BAV99W,135 and MMBD7000LT1G, the BAW56W provides superior 90 V reverse voltage headroom and guaranteed 150 °C junction operation-critical for uncooled industrial gateways and automotive-adjacent telematics modules where ambient temperatures exceed 85 °C.

Availability

BAW56W is available at Aetrix Electronics and suitable for RF detector circuits, digital I/O clamping, high-speed data sampling paths, and industrial sensor interface designs requiring stable component supply and long-term obsolescence management.

Supply support for BAW56W includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in advanced packaging and automotive-grade qualification.

The BAW56W belongs to Nexperia's high-speed switching diode product line, engineered specifically for signal integrity preservation in RF, communications, and industrial control applications demanding nanosecond-scale timing precision.

FAQ

What is the maximum continuous forward current rating for BAW56W?

The BAW56W is rated for 130 mA per diode at Tamb ≤ 25 °C on FR4 PCB with single-sided copper. This limit drops to 150 mA only for pulsed operation (tp = 1 µs, δ ≤ 0.02). Continuous use above 130 mA requires thermal derating based on Rth(j-a) = 625 K/W and ambient temperature.

Can BAW56W be used in place of a single-diode SOT23 part like BAV99?

No-BAW56W is a dual-diode common-anode device in SOT323, while BAV99 is a dual-diode common-cathode device in SOT23. Pinout, polarity, and package dimensions differ. Substitution requires schematic and layout revision to accommodate CA (pin 3) as the shared anode and revised PCB footprint.

Is BAW56W qualified for automotive applications?

No. Per Nexperia's 2022 revision history, BAW56W is explicitly designated as non-automotive qualified. Automotive alternatives include the -Q qualified BAV756S series, which undergo additional AEC-Q101 stress testing and PPAP documentation.

How does the common-anode configuration affect circuit design?

The CA (pin 3) serves as the shared anode connection, requiring both cathodes (pins 1 and 2) to be driven toward lower potentials to conduct. This topology is ideal for OR-ing two input signals into one output or implementing dual-path clamping to a common rail, but cannot replicate common-cathode OR-gate behavior without external inversion.