Diodes Incorporated BAW56W-7-F

Overview

BAW56W-7-F from Diodes Incorporated is a dual surface-mount switching diode in SOT323 package, rated for 75 V peak repetitive reverse voltage, 300 mA forward current, and 4.0 ns reverse recovery time, optimized for high-speed signal routing and general-purpose switching in compact consumer and industrial electronics.

For engineers reviewing the BAW56W-7-F datasheet, BAW56W-7-F pinout, BAW56W-7-F application, or BAW56W-7-F equivalent, key selection criteria include fast switching performance (trr ≤ 4.0 ns), low forward voltage (VF = 0.715 V @ 1 mA), dual-diode integration in ultra-small SOT323, thermal resistance (RθJA = 625 °C/W), and AEC-Q101-qualified variant availability (BAW56WQ-7-F).

Technical Context

The BAW56W-7-F integrates two independent silicon switching diodes in a single SOT323 package with common cathode configuration confirmed by internal schematic and top-view marking diagram. Its fast recovery (trr ≤ 4.0 ns) and low junction capacitance (CT ≤ 2.0 pF @ 0 V, 1 MHz) support RF signal switching and digital logic interface isolation.

Designed for operation across –55 °C to +150 °C, it delivers stable VF and IR performance under thermal stress: IR remains ≤ 50 µA at VR = 75 V and TJ = +150 °C, while VF stays ≤ 1.25 V at IF = 150 mA, enabling reliable use in thermally constrained PCB layouts.

Key Specifications

Pinout & Package

Package: SOT323 - 3-terminal plastic surface-mount package (2 anodes, 1 shared cathode), 2.15 mm × 2.10 mm × 0.95 mm body, moisture sensitivity level 1, lead-free matte tin plating over Alloy 42 leadframe.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual switching diode applications.

Compared with BAV99W-7-F and MMBD1204-7-F, the BAW56W-7-F uniquely balances 75 V standoff, 300 mA rating, 2.0 pF capacitance, and SOT323 miniaturization-making it optimal for space-constrained, medium-voltage switching where thermal margin and signal fidelity are jointly prioritized.

Availability

BAW56W-7-F is available at Aetrix Electronics and suitable for USB port protection, RF antenna switching, digital logic level translation, and power supply OR-ing requiring stable component supply across industrial, consumer, and automotive-tier production programs.

Supply support for BAW56W-7-F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The BAW56W belongs to Diodes' general-purpose switching diode product line, engineered for high-speed, low-capacitance signal routing in compact portable and automotive electronics where board space and switching fidelity are critical.

FAQ

What is the pin configuration of BAW56W-7-F?

BAW56W-7-F uses a 3-pin SOT323 package with Pin 1 = Anode 1, Pin 2 = Anode 2, and Pin 3 = Common Cathode. This configuration is confirmed in the internal schematic and top-view marking diagram in DS30064 Rev. 14–2, and supports dual-input, single-output switching topologies such as OR-ing and bidirectional clamping.

Is BAW56W-7-F suitable for automotive applications?

The standard BAW56W-7-F is not AEC-Q101 qualified; however, its automotive-grade variant BAW56WQ-7-F is fully AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. For automotive designs, BAW56WQ-7-F must be specified-identical electrical specs but with controlled change management and extended reliability testing.

How does BAW56W-7-F perform at elevated temperature?

At TJ = +150 °C, BAW56W-7-F maintains IR ≤ 50 µA at VR = 75 V and VF ≤ 1.25 V at IF = 150 mA. Its –55 °C to +150 °C operating range and 625 °C/W thermal resistance require a minimum 1 in² 2 oz copper pad for full 200 mW dissipation, validated per JEDEC JESD51-3 test conditions.

Can BAW56W-7-F replace BAV99 in existing designs?

BAW56W-7-F is not a direct replacement for BAV99 due to differing packages (SOT323 vs. SOT23) and pinouts. While both are dual common-cathode diodes with similar trr and VF, BAW56W-7-F's smaller footprint and lower CT (2.0 pF vs. ~3.0 pF) offer advantages in high-frequency layouts-but mechanical redesign and layout verification are mandatory before substitution.