Nexperia USA Inc. BAW56W/DG/B2,115

Overview

BAW56W/DG/B2,115 from Nexperia is a dual high-speed switching diode in SOT23 package with common anode configuration, rated for 90 V reverse voltage, ≤4 ns reverse recovery time, and ≤2 pF junction capacitance. It enables fast signal routing and clamping in compact DC-DC converter feedback paths, RF detector circuits, and logic-level translation interfaces.

For engineers reviewing the BAW56W/DG/B2,115 datasheet, BAW56W/DG/B2,115 pinout, BAW56W/DG/B2,115 application, or BAW56W/DG/B2,115 equivalent, this page delivers verified electrical parameters, validated dual-diode terminal mapping, real-world switching use cases, and cross-reference alternatives with documented functional alignment.

Technical Context

The BAW56W/DG/B2,115 integrates two independent silicon switching diodes sharing a single anode terminal, forming a common-anode dual-diode structure optimized for bidirectional signal steering and low-loss charge recycling. Its trr ≤4 ns and Cd ≤2 pF at 0 V are measured under standardized IF = 10 mA / IR = 10 mA / RL = 100 Ω conditions per IEC 60747-2.

Thermal resistance Rth(j-a) is 500 K/W when mounted on FR4 PCB with single-sided copper, and Rth(j-sp) is 360 K/W to solder point-enabling reliable operation up to 150 °C junction temperature with pulsed forward currents up to 4 A (tp = 1 µs).

Key Specifications

Pinout & Package

SOT23 (TO-236AB) plastic surface-mount package: 3-terminal, 1.9 mm pitch, 2.9 mm × 1.3 mm × 1.0 mm body, FR4-compatible footprint per Fig. 8–9.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual high-speed switching diode applications.

Compared with BAV99W,115 and MMBD7000LT1G, the BAW56W/DG/B2,115 uniquely guarantees ≤4 ns t_rr and ≤2 pF C_d across full temperature range while maintaining strict SOT23 pin compatibility-making it the only option qualified for production-critical high-frequency clamping where parameter min/max bounds directly impact system timing margin.

Availability

BAW56W/DG/B2,115 is available at Aetrix Electronics and suitable for DC-DC converter feedback clamping, RF detector biasing, and logic-level translation interfaces requiring stable component supply, consistent parametric yield, and long-term obsolescence management.

Supply support for BAW56W/DG/B2,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability standard products-including logic, discretes, MOSFETs, and ESD protection devices-with manufacturing rooted in process control and automotive-grade quality systems.

The BAW56 series belongs to Nexperia's high-speed switching diode product line, engineered specifically for nanosecond-scale signal routing, transient suppression, and low-capacitance interface protection in space-constrained consumer, industrial, and communications equipment.

FAQ

What is the maximum continuous forward current rating per diode in the BAW56W/DG/B2,115?

The absolute maximum continuous forward current per diode is 215 mA at Tamb ≤ 25 °C, derating linearly to zero at 150 °C junction temperature. This rating assumes device mounting on FR4 PCB with single-sided copper and standard footprint per datasheet footnote [1]. Exceeding this limit risks thermal runaway due to Rth(j-a) = 500 K/W.

Does the BAW56W/DG/B2,115 meet automotive qualification standards?

No. The BAW56W/DG/B2,115 is explicitly designated as non-automotive qualified per Nexperia's 2022 revision history. It lacks AEC-Q101 stress testing and is not approved for safety-critical vehicle subsystems. For automotive use, Nexperia recommends the BAW56-Q variant, which undergoes full AEC-Q101 qualification including HTGB, TCT, and HTRB testing.

Can the BAW56W/DG/B2,115 be used in place of a single diode like the 1N4148?

Yes-but only when leveraging its dual-diode topology. As a drop-in replacement for one 1N4148, it introduces unnecessary terminals and layout complexity. Its advantage emerges in dual-path applications: e.g., replacing two 1N4148s in a common-anode clamp saves board area and improves matching. Pin 3 (CA) must connect to the shared reference rail; pins 1 and 2 serve independent cathode paths.

What is the guaranteed maximum reverse leakage current at 80 V and 150 °C?

The datasheet specifies IR ≤ 150 µA at VR = 80 V and Tj = 150 °C-measured under pulsed conditions to avoid self-heating artifacts. This value reflects worst-case production screening and is validated per IEC 60134 limiting values. At ambient 25 °C, leakage is ≤0.5 µA, confirming exponential temperature dependence consistent with silicon diode physics.