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Nexperia USA Inc. BAW56W/DG/B3X
- Part No.:
- BAW56W/DG/B3X
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Diode Arrays
- Package:
- -
- Datasheet:
-
BAW56W/DG/B3X.pdf
- Description:
- DIODE ARRAY GEN PURP 90V 150MA
- Quantity:
- Payment:
- Shipping:
Inventory:4,287
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Product details
Overview
BAW56W/DG/B3X from Nexperia is a dual high-speed switching diode in SOT23 package with common anode configuration, rated for 90 V reverse voltage, ≤4 ns reverse recovery time, and ≤2 pF capacitance. It enables fast signal routing and clamping in compact DC-DC converter feedback paths and RF detector circuits.
For engineers reviewing the BAW56W/DG/B3X datasheet, BAW56W/DG/B3X pinout, BAW56W/DG/B3X application, or BAW56W/DG/B3X equivalent, key selection criteria include trr ≤4 ns at IF=10 mA, VR=90 V, Cd≤2 pF at 1 MHz, and thermal resistance Rth(j-a)=500 K/W on FR4 PCB.
Technical Context
The BAW56W/DG/B3X integrates two independent silicon switching diodes sharing a common anode terminal, forming a dual-diode structure optimized for high-frequency signal steering and transient suppression. Its low-junction-capacitance (2 pF) and ultrafast recovery (4 ns) support operation up to ~100 MHz in small-signal switching roles.
It operates within -65 °C to 150 °C ambient range, with forward current limited to 125 mA per diode at 25 °C ambient and 215 mA peak under derated conditions. Thermal resistance from junction to solder point is 360 K/W, enabling reliable performance in thermally constrained layouts.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Voltage (VR) | 90 V - supports input rail clamping in 48 V industrial power supplies without breakdown |
| Reverse Recovery Time (trr) | 4 ns - enables clean switching in >25 MHz clock distribution and pulse shaping circuits |
| Diode Capacitance (Cd) | 2 pF at 0 V, 1 MHz - minimizes signal loading in RF detector and mixer bias networks |
| Forward Voltage (VF) | 855 mV at 10 mA - ensures low conduction loss in precision analog switch and level-shift applications |
| Reverse Current (IR) | 0.5 µA at 80 V, 25 °C - maintains signal integrity in high-impedance sample-and-hold and sensor interface nodes |
| Junction Temperature (Tj) | 150 °C - allows sustained operation in sealed enclosures with limited airflow |
Pinout & Package
SOT23 (TO-236AB) plastic surface-mount package: 3-terminal, 1.9 mm pitch, 2.9 mm × 1.3 mm × 1.0 mm body, standard footprint for reflow and wave soldering.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (K1) | Cathode of Diode 1 | Provides dedicated cathode path for first diode; used in dual-path clamping or OR-ing configurations |
| 2 (K2) | Cathode of Diode 2 | Independent cathode node enabling separate signal routing or differential detection |
| 3 (CA) | Common Anode | Shared anode connection simplifies bias network design and reduces PCB trace count in dual-diode topologies |
Key Features
| Feature | Design Value |
|---|---|
| High-speed switching | trr ≤ 4 ns ensures minimal tail current during turn-off, critical for reducing cross-conduction in synchronous rectifier drivers |
| Low junction capacitance | Cd ≤ 2 pF limits capacitive feedthrough in RF envelope detectors and high-frequency logic-level translators |
| Low leakage current | IR ≤ 0.5 µA at 80 V preserves accuracy in high-impedance voltage divider and reference buffer circuits |
| Thermal robustness | Rth(j-sp) = 360 K/W enables stable operation at 125 mA continuous current on standard FR4 with tin-plated copper |
Applications
| DC-DC Converter Feedback Path | RF Signal Detector |
|---|---|
Use Scenario: Clamping and steering feedback signals in isolated flyback and forward converters operating at 100–500 kHz. IC Role / Device Role: Dual-diode clamp protecting optocoupler input and stabilizing regulation loop response. Use Value: 4 ns trr prevents phase lag in error amplifier loop; 90 V VR withstands reflected transients across transformer windings. |
Use Scenario: Demodulating AM/ASK-modulated RF carriers in 315 MHz/433 MHz ISM-band receivers. IC Role / Device Role: High-speed envelope detector diode pair converting RF bursts into baseband logic pulses. Use Value: 2 pF Cd avoids detuning LC tank; low IR preserves sensitivity in high-Z detector output stage. |
| Digital Logic Level Shifter | ESD Protection Clamp |
Use Scenario: Translating 1.8 V logic signals to 3.3 V domains in mixed-voltage microcontroller I/O interfaces. IC Role / Device Role: Bidirectional level-shifting diode pair using common-anode topology with pull-up resistors. Use Value: 855 mV VF at 10 mA ensures predictable threshold offset; SOT23 footprint matches fine-pitch MCU packages. |
Use Scenario: Secondary-stage clamping on USB 2.0 D+/D− lines and CAN bus terminations against ±8 kV HBM ESD events. IC Role / Device Role: Fast-turn-on shunt element diverting ESD current before IC input structures reach breakdown. Use Value: 4 ns trr enables sub-nanosecond response; 90 V VR accommodates 24 V industrial bus overvoltage margins. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual high-speed switching diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BAV99W/DG/B3X | trr = 4 ns (same), but VF = 1.25 V at 150 mA vs. BAW56W's 855 mV at 10 mA; higher IF rating (200 mA) | Better suited for higher-current switching; less optimal for low-VF precision analog paths | Select when forward current exceeds 100 mA or when higher surge tolerance is required |
| MMBD7000LT1G | trr = 4 ns (same), Cd = 2.5 pF (slightly higher), VR = 70 V (lower than 90 V) | Limited to ≤70 V systems; marginally higher capacitance affects RF bandwidth above 500 MHz | Choose only if 70 V VR suffices and cost sensitivity outweighs 20 V VR margin |
Compared with BAV99W/DG/B3X and MMBD7000LT1G, the BAW56W/DG/B3X delivers superior low-current forward voltage (855 mV @ 10 mA) and highest VR rating (90 V), making it optimal for precision feedback clamping and industrial 48 V system protection where leakage and voltage margin are critical.
Availability
BAW56W/DG/B3X is available at Aetrix Electronics and suitable for DC-DC converter feedback paths, RF signal detectors, digital logic level shifters, and ESD protection clamps requiring stable component supply and consistent parametric performance across production batches.
Supply support for BAW56W/DG/B3X includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified and industrial-grade components.
The BAW56 series belongs to Nexperia's high-speed switching diode product line, engineered specifically for signal integrity-critical roles in power management, RF front-ends, and interface protection where speed, capacitance, and leakage must be simultaneously optimized.
FAQ
What is the maximum continuous forward current per diode at 25 °C ambient?
The BAW56W/DG/B3X supports 125 mA continuous forward current per diode at Tamb ≤ 25 °C when mounted on standard FR4 PCB with single-sided copper. This rating drops to 215 mA only under pulsed conditions (tp = 1 µs, δ ≤ 0.02) and requires strict thermal derating above 25 °C ambient.
Is the BAW56W/DG/B3X automotive qualified?
No. The BAW56W/DG/B3X is explicitly marked as non-automotive qualified in its revision history. Nexperia offers automotive alternatives such as the BAW56-Q series, which undergo AEC-Q101 qualification and include extended temperature testing, failure rate analysis, and PPAP documentation.
How does the common-anode configuration affect circuit layout?
The CA (Pin 3) serves as the shared anode node for both diodes, allowing simplified biasing with a single pull-up resistor or voltage source. This reduces component count and PCB area versus discrete diodes, but requires careful grounding of K1/K2 to avoid unintended conduction paths in bidirectional signal routing.
Can BAW56W/DG/B3X replace BAV99 in existing designs?
Yes, in most cases - both share identical SOT23 pinout (K1-K2-CA), 90 V VR, and 4 ns trr. However, BAW56W has lower VF (855 mV vs. 1.25 V at 150 mA) and tighter IR spec (0.5 µA vs. 2.5 µA), making it preferable for low-power analog signal paths where conduction loss and leakage matter.
BAW56W/DG/B3X Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Diode Configuration:
- 1 Pair Common Anode
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 90 V
- Current - Average Rectified (Io) (per Diode):
- 150mA (DC)
- Voltage - Forward (Vf) (Max) @ If:
- 1.25 V @ 150 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- 4 ns
- Current - Reverse Leakage @ Vr:
- 500 nA @ 80 V
- Operating Temperature - Junction:
- 150°C (Max)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- -
BAW56W/DG/B3X FAQ
1.How can I place an order for BAW56W/DG/B3X through Aetrix?
Please submit a Request for Quotation (RFQ) for BAW56W/DG/B3X on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAW56W/DG/B3X reliable?
The price and inventory of BAW56W/DG/B3X are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAW56W/DG/B3X is usually 5 days.
3.What payment methods are accepted for BAW56W/DG/B3X?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAW56W/DG/B3X transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAW56W/DG/B3X?
BAW56W/DG/B3X orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAW56W/DG/B3X order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAW56W/DG/B3X?
For technical support, including BAW56W/DG/B3X datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAW56W/DG/B3X requirements.
6.How does Aetrix verify that BAW56W/DG/B3X is sourced from the original manufacturer or authorized distributors?
All BAW56W/DG/B3X products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAW56W/DG/B3X meets industry standards.
7.What is the process for return or replacement of BAW56W/DG/B3X?
All BAW56W/DG/B3X units undergo pre-shipment inspection (PSI). If there is an issue with BAW56W/DG/B3X, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAW56W/DG/B3X part is unused and in its original packaging.
Return procedure for BAW56W/DG/B3X:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BAW56W/DG/B3X Tags
-
BAV99-7-F
Diodes Incorporated
-
BAT54C-7-F
Diodes Incorporated
-
BAV99,215
Nexperia USA Inc.
-
BAT54SLT1G
onsemi
-
BAV70LT1G
onsemi
-
BAT54CLT1G
onsemi
-
BAT54S-7-F
Diodes Incorporated
-
BAV99LT1G
onsemi
-
BAT54S,215
Nexperia USA Inc.
-
BAS40-04LT1G
onsemi
-
MMBD1503-TP
Micro Commercial Co
-
BAV99WT1G
onsemi
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