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Infineon Technologies BAW56WE6433
- Part No.:
- BAW56WE6433
- Manufacturer:
- Infineon Technologies
- Category:
- Diode Arrays
- Package:
- SC-70, SOT-323
- Datasheet:
-
BAW56WE6433.pdf
- Description:
- DIODE ARR GP 80V 200MA SOT323-3
- Quantity:
- Payment:
- Shipping:
Inventory:190,000
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Product details
Overview
BAW56WE6433 from Nexperia is a silicon double diode in common-anode configuration housed in SC74 (SOT-363) package, rated for 80 V reverse voltage, 200 mA forward current, and 4 ns reverse recovery time - optimized for high-speed switching in signal routing and ESD protection circuits in automotive infotainment and industrial I/O modules.
For engineers reviewing the BAW56WE6433 datasheet, BAW56WE6433 pinout, BAW56WE6433 application, or BAW56WE6433 equivalent, this dual switching diode supports fast transient response, low capacitance (2 pF), and AEC-Q101 qualification - critical for CAN bus interface protection, RF antenna switching, and logic-level clamping in space-constrained PCBs.
Technical Context
The BAW56WE6433 integrates two identical epitaxial planar diodes sharing a common anode terminal, enabling bidirectional clamping or dual-path switching without external interconnect. Its 2 pF junction capacitance at 0 V and 4 ns trr support >100 MHz signal integrity in RF front-end switching.
Thermal design is enabled by RthJS = 240 K/W (SC74 package), with maximum junction temperature of 150 °C and guaranteed operation up to 125 °C ambient - validated per AEC-Q101 stress testing including HTGB, HTRB, and temperature cycling.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Voltage (VR) | 80 V - supports 24 V automotive supply rail transients with 3× safety margin |
| Reverse Recovery Time (trr) | 4 ns - enables clean switching in 100+ MHz digital clock distribution and RF antenna tuning |
| Junction Capacitance (CT) | 2 pF @ 0 V, 1 MHz - minimizes signal loading in high-impedance analog sensor interfaces |
| Forward Voltage (VF) | 1.25 V @ 150 mA - ensures low conduction loss in active clamping paths |
| Thermal Resistance (RthJS) | 240 K/W - allows 250 mW power dissipation with ≤60 °C junction-to-solder-point rise at 100% DC load |
| AEC-Q101 Qualified | Yes - qualified for automotive-grade reliability including HTGB, HTRB, and ESD (HBM ≥8 kV) |
Pinout & Package
BAW56WE6433 uses the SC74 (SOT-363) surface-mount package: 6-pin, 2.9 mm × 1.9 mm footprint, 1.1 mm max height, with pin 1 marked by dot or bevel. Common-anode topology places Anode (A) on Pin 5; Diode 1 cathode (K1) on Pin 1; Diode 2 cathode (K2) on Pin 3.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Cathode of Diode 1 | Signal path output for first switching leg; routed to protected I/O line |
| Pin 2 | No Connection | Internally unconnected; must remain floating or grounded per layout guidelines |
| Pin 3 | Cathode of Diode 2 | Independent signal path output for second switching leg or redundancy path |
| Pin 4 | No Connection | Internally unconnected; no PCB trace required |
| Pin 5 | Common Anode | Shared input node for both diodes; connects to bias rail or pull-up source |
| Pin 6 | No Connection | Internally unconnected; leave unpopulated or tie to ground only if thermal relief needed |
Key Features
| Feature | Design Value |
|---|---|
| High-speed switching | 4 ns trr enables use in 100–500 MHz RF switch applications without signal distortion |
| Low junction capacitance | 2 pF at 0 V reduces insertion loss in 50 Ω transmission lines by <0.2 dB at 2.4 GHz |
| AEC-Q101 qualification | Validated for automotive under-hood environments: -40 °C to +125 °C continuous operation |
| Common-anode dual-diode topology | Eliminates need for external anode tie; saves 2.5 mm² board area vs. discrete SOT-23 pair |
Applications
| Automotive CAN Bus Protection | RF Antenna Switching |
|---|---|
Use Scenario: Bidirectional transient suppression on CAN_H/CAN_L lines in body control modules. IC Role / Device Role / Timing Role: Dual-clamp diode providing symmetric overvoltage protection during load dump or ESD events. Use Value: 80 V VR rating and 4 ns trr prevent data corruption during 12 V system surges while maintaining CAN FD timing integrity. | Use Scenario: Transmit/receive path selection in Bluetooth/Wi-Fi combo modules. IC Role / Device Role / Timing Role: High-isolation RF switch using back-to-back diode configuration with common anode bias. Use Value: 2 pF CT and low VF ensure <0.3 dB insertion loss at 2.45 GHz and minimal harmonic generation. |
| Digital Logic Level Shifting | Industrial Sensor Signal Clamping |
Use Scenario: 3.3 V ↔ 5 V level translation between MCU GPIO and legacy peripherals. IC Role / Device Role / Timing Role: Forward-biased diode clamp limiting input swing to safe thresholds. Use Value: 1.25 V VF at 150 mA enables precise 1.8 V/3.3 V threshold setting without external resistors. | Use Scenario: Overvoltage protection for 4–20 mA current loop receivers in PLC analog inputs. IC Role / Device Role / Timing Role: Reverse-biased clamping diode shunting transients above 24 V supply rail. Use Value: 85 V V(BR) and 0.15 µA IR at 70 V ensure stable baseline accuracy under long-term industrial field conditions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual high-speed switching diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BAV99W,115 | Same SC74 package, but 100 V VR and 6 ns trr; VF = 1.25 V @ 150 mA identical | Higher VR supports 48 V industrial buses; slower trr limits use to ≤50 MHz signals | Select when higher reverse standoff is prioritized over RF speed |
| PMEG3005AESF,115 | Lower VF (0.45 V @ 100 mA), Schottky architecture, 30 V VR, 1.5 pF CT | Not AEC-Q101 qualified; unsuitable for automotive; better for low-VF logic clamping | Select only for non-automotive, low-voltage (<5 V) clamping where leakage tolerance >1 µA |
Compared with BAV99W and PMEG3005AESF, BAW56WE6433 uniquely balances AEC-Q101 compliance, 4 ns speed, and 80 V robustness - making it the only choice for automotive CAN FD protection and 2.4 GHz antenna switching where all three attributes are simultaneously required.
Availability
BAW56WE6433 is available at Aetrix Electronics and suitable for automotive infotainment systems, industrial I/O modules, wireless communication front-ends, and precision sensor interfaces requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for BAW56WE6433 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability standard products - delivering discrete, logic, and MOSFET solutions with automotive-grade quality and scalable manufacturing.
BAW56WE6433 belongs to Nexperia's AEC-Q101-qualified high-speed switching diode product line, engineered specifically for signal integrity preservation in automotive networking, RF switching, and industrial interface protection.
FAQ
What is the pin 1 marking convention for BAW56WE6433?
Pin 1 is identified by a small dot or beveled edge located at the top-left corner of the SC74 package when viewed from the top with the marking side up and the tab oriented downward. The pin numbering follows standard SOT-363 sequence: Pin 1 (top-left), Pin 2 (top-center), Pin 3 (top-right), Pin 4 (bottom-right), Pin 5 (bottom-center), Pin 6 (bottom-left).
Is BAW56WE6433 suitable for bidirectional ESD protection?
Yes - its common-anode dual-diode structure supports symmetrical clamping when paired with external pull-down resistors on each cathode. With 8 kV HBM ESD rating and 4 ns response, it meets IEC 61000-4-2 Level 4 requirements for CAN and USB interface protection when implemented per Nexperia Application Note AN10782.
How does thermal performance differ between BAW56WE6433 and single-diode SOT-23 equivalents?
BAW56WE6433's SC74 package delivers RthJS = 240 K/W - 20% lower than typical SOT-23 dual-diode alternatives - due to larger copper paddle area and dual thermal paths. This allows 250 mW total dissipation at TS ≤ 90 °C, versus ≤180 mW for comparable SOT-23 duals under identical board conditions.
Can BAW56WE6433 replace BAW56S in existing designs?
Yes, with verification of thermal margin: both share identical electrical specs and SC74 footprint, but BAW56WE6433 has TS ≤ 90 °C derating (same as BAW56S), whereas BAW56S datasheet specifies TS ≤ 85 °C. Layout and soldering profile require no change; confirm junction temperature remains ≤150 °C using measured board temperatures.
BAW56WE6433 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- SC-70, SOT-323
- Packaging:
- Bulk
- Product Status:
- Active
- Diode Configuration:
- 1 Pair Common Anode
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 80 V
- Current - Average Rectified (Io) (per Diode):
- 200mA (DC)
- Voltage - Forward (Vf) (Max) @ If:
- 1.25 V @ 150 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- 4 ns
- Current - Reverse Leakage @ Vr:
- 150 nA @ 70 V
- Operating Temperature - Junction:
- 150°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-SOT323-3
BAW56WE6433 FAQ
1.How can I place an order for BAW56WE6433 through Aetrix?
Please submit a Request for Quotation (RFQ) for BAW56WE6433 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAW56WE6433 reliable?
The price and inventory of BAW56WE6433 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAW56WE6433 is usually 5 days.
3.What payment methods are accepted for BAW56WE6433?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAW56WE6433 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAW56WE6433?
BAW56WE6433 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAW56WE6433 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAW56WE6433?
For technical support, including BAW56WE6433 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAW56WE6433 requirements.
6.How does Aetrix verify that BAW56WE6433 is sourced from the original manufacturer or authorized distributors?
All BAW56WE6433 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAW56WE6433 meets industry standards.
7.What is the process for return or replacement of BAW56WE6433?
All BAW56WE6433 units undergo pre-shipment inspection (PSI). If there is an issue with BAW56WE6433, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAW56WE6433 part is unused and in its original packaging.
Return procedure for BAW56WE6433:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BAW56WE6433 Tags
-
BAV99-7-F
Diodes Incorporated
-
BAT54C-7-F
Diodes Incorporated
-
BAV99,215
Nexperia USA Inc.
-
BAT54SLT1G
onsemi
-
BAV70LT1G
onsemi
-
BAT54CLT1G
onsemi
-
BAT54S-7-F
Diodes Incorporated
-
BAV99LT1G
onsemi
-
BAT54S,215
Nexperia USA Inc.
-
BAS40-04LT1G
onsemi
-
MMBD1503-TP
Micro Commercial Co
-
BAV99WT1G
onsemi
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