Infineon Technologies BAW 56W H6327

Overview

BAW56W H6327 from Infineon Technologies is a silicon dual common-anode switching diode in SC74 (SOT-363) package, rated for 80 V reverse voltage, 200 mA forward current, and 4 ns reverse recovery time, optimized for high-speed signal routing and ESD protection in automotive infotainment interfaces.

For engineers reviewing the BAW56W H6327 datasheet, BAW56W H6327 pinout, BAW56W H6327 application, or BAW56W H6327 equivalent, this part supports fast-switching requirements in CAN FD transceiver protection, USB 2.0 data line clamping, and low-capacitance RF antenna switching circuits where thermal resistance (R_thJS = 190 K/W) and junction temperature (T_j = 150 °C) are critical design constraints.

Technical Context

The BAW56W implements two identical silicon PN junctions sharing a common anode terminal, enabling bidirectional clamping and series switching with matched electrical characteristics across both diodes. Its 2 pF capacitance at 0 V and 4 ns trr support >100 MHz signal integrity in high-speed digital I/O protection paths.

Qualified per AEC-Q101, it operates across −65 °C to +150 °C storage range and delivers stable IR ≤ 0.15 µA at VR = 70 V and TA = 25 °C, with VF = 1.25 V max at IF = 150 mA - enabling low-loss biasing in compact automotive sensor interface designs.

Key Specifications

Pinout & Package

BAW56W is housed in SC74 (SOT-363), a 6-pin surface-mount package with symmetrical pin layout and no defined Pin 1 orientation in tape-and-reel; terminals are arranged as dual diode pair with shared anode.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual common-anode switching diode applications.

Compared with BAV99W and MMBD7000LT1G, the BAW56W uniquely combines 80 V VR, 4 ns trr, and 190 K/W thermal resistance in SC74 - making it the only option qualified for AEC-Q101 high-voltage, high-speed automotive signal protection without thermal compromise.

Availability

BAW56W H6327 is available at Aetrix Electronics and suitable for automotive CAN FD protection, USB 2.0 clamping, RF antenna switching, and industrial 4–20 mA interface protection requiring stable component supply across extended temperature and lifecycle conditions.

Supply support for BAW56W H6327 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to IATF 16949.

The BAW56W belongs to Infineon's high-speed switching diode product line, engineered specifically for AEC-Q101-compliant signal integrity protection in automotive communication buses and sensor interfaces.

FAQ

Is BAW56W H6327 pin-compatible with BAW56S or BAW56U?

No - although all share SC74 (SOT-363) packaging, BAW56W has distinct thermal design: its R_thJS = 190 K/W and maximum soldering point temperature TS ≤ 103 °C differ from BAW56S (TS ≤ 85 °C, R_thJS = 260 K/W) and BAW56U (TS ≤ 90 °C, R_thJS = 240 K/W). Layouts must verify thermal pad copper area and airflow per datasheet Figure 8.

What is the maximum peak forward surge current for BAW56W at t = 1 µs?

The BAW56W supports IFSM = 4.5 A for t = 1 µs pulses, as specified in Absolute Maximum Ratings. This value assumes single-pulse operation with negligible duty cycle; repeated surges require derating per the permissible pulse load curves in datasheet Section 5.

Does BAW56W H6327 support bidirectional ESD clamping?

Yes - its common-anode dual-diode structure enables bidirectional clamping when the anode is biased at mid-rail (e.g., VCC/2) or grounded, with cathodes connected to protected lines. For unidirectional clamping to ground, tie the common anode to VCC and route cathodes to signal lines.

Can BAW56W replace BAV99 in existing designs?

Only with validation - BAW56W shares SC74 footprint and common-anode topology with BAV99, but differs in VR (80 V vs. 70 V), trr (4 ns vs. 6 ns), and thermal resistance (190 vs. 220 K/W). Designers must confirm transient immunity margins and thermal performance under worst-case ambient conditions before substitution.