Nexperia USA Inc. BAW56W/ZLF

Overview

BAW56W from Nexperia is a dual high-speed switching diode in a common-anode configuration, housed in an SOT323 (SC-70) package. It delivers trr ≤ 4 ns reverse recovery time, Cd ≤ 2 pF capacitance, and VR = 90 V, enabling reliable operation in RF detector and high-frequency signal routing circuits.

For engineers reviewing the BAW56W datasheet, BAW56W pinout, BAW56W application, or BAW56W equivalent, key selection criteria include reverse recovery speed under IF = 10 mA/IR = 10 mA conditions, low-junction capacitance at 0 V bias, common-anode dual-diode topology for signal steering, and thermal resistance of 625 K/W in free air.

Technical Context

The BAW56W integrates two independent silicon switching diodes sharing a single anode terminal, forming a compact dual-diode structure optimized for fast transient response. Its design targets signal path switching where low stored charge and minimal capacitive loading are critical.

Reverse recovery is characterized with IF = 10 mA, IR = 10 mA, RL = 100 Ω, and IR(meas) = 1 mA at Tamb = 25 °C - yielding trr ≤ 4 ns. Forward voltage remains ≤ 855 mV at IF = 10 mA, supporting low-loss signal clamping in high-speed logic interfaces.

Key Specifications

Pinout & Package

Package: SOT323 (SC-70), 3-lead surface-mount plastic package measuring 2.0 mm × 1.25 mm × 0.95 mm with 1.3 mm lead pitch.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual high-speed switching diode applications.

Compared with BAV99W and MMBD7000, the BAW56W offers superior reverse voltage rating and tighter VF consistency at low currents-critical for precision detector and low-power level-shifting applications where voltage headroom and signal fidelity are non-negotiable.

Availability

BAW56W is available at Aetrix Electronics and suitable for RF detector modules, high-speed logic protection circuits, signal path selectors, and low-power level-shifting designs requiring stable component supply across production lifecycles.

Supply support for BAW56W includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability essential semiconductors for automotive, industrial, and consumer markets.

The BAW56W belongs to Nexperia's high-speed switching diode product line, engineered specifically for signal integrity-critical roles in RF front-ends, logic interface protection, and compact multiplexing solutions.

FAQ

What is the maximum continuous forward current rating for BAW56W?

The BAW56W supports 150 mA continuous forward current per diode at Tamb ≤ 25 °C on FR4 PCB with standard footprint. Derating applies above 25 °C ambient: Rth(j-a) = 625 K/W defines thermal limit, reducing usable current by ~1.2 mA/°C rise above 25 °C.

Can BAW56W be used in 5 V logic clamping applications?

Yes - with VF ≤ 855 mV at IF = 10 mA, the BAW56W clamps 5 V logic overshoot to ~5.855 V when referenced to VCC, staying within typical 6 V absolute maximum ratings of modern I/O cells. Its 2 pF capacitance avoids signal delay in sub-10 ns edge environments.

Is the common-anode configuration electrically symmetrical between the two diodes?

Yes - datasheet characteristics (VF, trr, Cd, IR) are specified per diode under identical test conditions, confirming matched performance. Layout symmetry on PCB further ensures balanced thermal and parasitic behavior in dual-path applications.

Does BAW56W meet automotive qualification standards?

No - the 2022 datasheet revision explicitly states this part is non-automotive qualified. It lacks AEC-Q101 stress testing and automotive-grade process controls. For automotive use, Nexperia recommends BAV756S-Q series variants with full AEC-Q101 certification.