NXP Semiconductors BAW62,113

Overview

BAW62,113 from Nexperia is a high-speed switching diode in a hermetically sealed SOD27 (DO-35) glass package, rated for 75 V repetitive peak reverse voltage, 450 mA repetitive peak forward current, and 4 ns maximum reverse recovery time. It serves as a fast-switching element in logic interface and pulse shaping circuits operating up to ~100 MHz.

For engineers reviewing the BAW62,113 datasheet, BAW62,113 pinout, BAW62,113 application, or BAW62,113 equivalent, key selection criteria include reverse recovery time, junction capacitance (≤2 pF), low forward voltage at 5–100 mA, thermal resistance (500 K/W), and compatibility with FR4 PCB mounting using 10 mm lead length.

Technical Context

The BAW62,113 is a planar-structured silicon switching diode optimized for minimal charge storage and rapid carrier recombination. Its 4 ns trr and ≤2 pF capacitance at 0 V enable clean edge transitions in digital signal routing and RF detector applications.

It operates with a maximum junction temperature of 200 °C and exhibits reverse leakage below 5 μA at 75 V and 25 °C. Thermal performance is defined for standard FR4 mounting with 10 mm leads, yielding Rth j-a = 500 K/W - critical for sustained pulse operation in compact layouts.

Key Specifications

Pinout & Package

BAW62,113 uses the SOD27 (DO-35) axial-leaded hermetic glass package: cylindrical body, 4.25 mm max length, 1.85 mm max diameter, 0.56 mm max lead diameter, with 25.4 mm minimum lead length. Leads are unmarked; cathode identified by band marking on glass envelope.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed switching diode applications.

Compared with BAW62,113, BAV99,215 offers dual functionality in compact SMT form but sacrifices capacitance and forward voltage performance; 1N4148W,115 provides higher voltage rating and SMT compatibility at the cost of increased junction capacitance - both require PCB redesign and are not drop-in replacements.

Availability

BAW62,113 is available at Aetrix Electronics and suitable for high-speed logic clamping, RF detection, pulse shaping, and data line steering applications requiring stable component supply across automotive, industrial control, and wireless communication programs.

Supply support for BAW62,113 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, formed in 2017 from the former NXP Standard Products division, with focus on automotive, industrial, computing, and consumer markets.

The BAW62,113 belongs to Nexperia's high-speed switching diode product line, engineered specifically for applications demanding nanosecond-scale switching, low capacitance, and robust thermal performance in through-hole logic and RF signal paths.

FAQ

What is the maximum reverse recovery time specified for BAW62,113?

The BAW62,113 has a maximum reverse recovery time (t_rr) of 4 ns under standard test conditions (IF = 10 mA switched to IR = 10 mA, RL = 100 Ω, measurement at IR = 1 mA). This value is guaranteed across the full operating temperature range and is critical for maintaining signal fidelity in high-frequency switching applications.

Does BAW62,113 have a specified forward voltage at 100 mA?

Yes, the BAW62,113 specifies a maximum forward voltage (V_F) of 1000 mV at 100 mA and 25 °C. At elevated junction temperatures (100 °C), V_F decreases to a maximum of 930 mV - a characteristic useful for thermal stability analysis in power-sensitive designs.

What is the junction-to-ambient thermal resistance of BAW62,113?

The BAW62,113 has a junction-to-ambient thermal resistance (R_{th j-a}) of 500 K/W when mounted on an FR4 PCB with 10 mm lead length. This value defines the steady-state temperature rise per watt of dissipated power and must be used to calculate safe operating ambient limits for continuous forward conduction.

Is BAW62,113 suitable for RF detector applications?

Yes, the BAW62,113 is suitable for RF detector applications due to its low junction capacitance (≤2 pF at 0 V), fast reverse recovery (4 ns), and low forward voltage (620–750 mV at 5 mA). These parameters enable efficient envelope detection in UHF bands (e.g., 315 MHz, 433 MHz) with minimal signal loss and distortion.

What package type does BAW62,113 use and how is polarity marked?

The BAW62,113 uses the SOD27 (DO-35) hermetically sealed axial-leaded glass package. Polarity is marked by a single color band on the glass envelope, indicating the cathode terminal; the unbanded lead is the anode. Lead diameter is up to 0.56 mm, and minimum lead length is 25.4 mm.