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NXP Semiconductors BAW62,133
- Part No.:
- BAW62,133
- Manufacturer:
- NXP Semiconductors
- Category:
- Single Diodes
- Package:
- DO-204AH, DO-35, Axial
- Datasheet:
-
BAW62,133.pdf
- Description:
- DIODE GEN PURP 75V 250MA ALF2
- Quantity:
- Payment:
- Shipping:
Inventory:6,289
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Product details
Overview
BAW62,133 from Nexperia is a high-speed switching diode in a hermetically sealed SOD27 (DO-35) glass package, with 4 ns reverse recovery time, 75 V repetitive peak reverse voltage, and 450 mA repetitive peak forward current. It serves as a fast signal path switch in logic interface circuits and RF detector stages.
For engineers reviewing the BAW62,133 datasheet, BAW62,133 pinout, BAW62,133 application, or BAW62,133 equivalent, key selection criteria include reverse recovery time, junction-to-ambient thermal resistance, diode capacitance at zero bias, forward voltage at 100 mA, and maximum junction temperature rating.
Technical Context
The BAW62,133 uses planar silicon technology to achieve sub-4 ns trr under IF = 10 mA → IR = 10 mA switching conditions with RL = 100 Ω load. Its low 2 pF capacitance at 1 MHz and 0 V bias supports high-frequency signal routing without significant phase distortion.
Thermal performance is defined for FR4 PCB mounting with 10 mm lead length: Rth j-a = 500 K/W and Rth j-tp = 240 K/W. The device operates up to Tj = 200 °C and stores from −65 °C to +200 °C, enabling use in thermally demanding industrial environments.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| trr | 4 ns max - enables reliable operation in >100 MHz digital switching and pulse shaping circuits |
| VRRM | 75 V - supports signal-level clamping and protection in 24 V and 48 V industrial control buses |
| IFRM | 450 mA - allows transient current handling in logic gate output buffering and sample-and-hold discharge paths |
| Cd | 2 pF max at 1 MHz, VR = 0 V - minimizes capacitive loading on high-speed data lines and RF detector inputs |
| VF @ 100 mA | 1000 mV max - ensures predictable forward drop in fast-switching current steering applications |
| Tj max | 200 °C - permits deployment in engine control modules and power supply feedback loops without derating |
Pinout & Package
SOD27 (DO-35) hermetically sealed glass package with axial leads; cathode identified by band marking; no internal die pad or thermal slug.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry point | Connected to lower-potential node during conduction; must withstand 4 A non-repetitive surge for t = 1 μs |
| Cathode | Forward current exit / reverse blocking terminal | Banded end; sustains 75 V reverse bias continuously; defines polarity in clipping and clamping configurations |
Key Features
| Feature | Design Value |
|---|---|
| Hermetic glass sealing | Prevents moisture ingress and long-term parameter drift in humid or outdoor environments |
| 4 ns reverse recovery time | Enables clean edge transitions in TTL/CMOS interfacing and pulse generator output stages |
| 2 pF junction capacitance | Reduces signal attenuation and timing skew in 50 Ω RF detector and mixer bias networks |
| 200 °C junction temperature rating | Eliminates need for external thermal derating in compact enclosed power electronics enclosures |
Applications
| Logic Level Translation | RF Signal Detection |
|---|---|
Use Scenario: Bidirectional level shifting between 3.3 V microcontroller I/O and 5 V legacy peripherals using diode-resistor networks. IC Role / Device Role / Timing Role: Fast-switching clamp diode providing sub-ns transition fidelity and minimal propagation delay skew. Use Value: Maintains signal integrity across voltage domains without active buffering, leveraging 4 ns trr and low VF consistency. | Use Scenario: Envelope detection in UHF receiver front-ends where input signals range from −20 dBm to 0 dBm. IC Role / Device Role / Timing Role: Zero-bias RF detector diode operating in square-law region with minimal junction capacitance. Use Value: Achieves >90% detection efficiency above 400 MHz due to 2 pF Cd and low series resistance. |
| Industrial Sensor Interface | Pulse Width Modulation Demodulation |
Use Scenario: Isolating and conditioning analog sensor outputs (e.g., thermocouple amplifiers) before ADC sampling in PLC modules. IC Role / Device Role / Timing Role: Reverse-biased protection diode shunting ESD transients while preserving DC accuracy via <5 μA IR at 75 V. Use Value: Prevents latch-up and offset drift in precision instrumentation chains without loading the signal path. | Use Scenario: Recovering duty-cycle information from PWM-driven actuators in motor control feedback loops. IC Role / Device Role / Timing Role: High-speed demodulator diode in RC integrator stage, responding to 100 kHz–1 MHz edge rates. Use Value: Delivers accurate average-voltage reconstruction with <1% ripple error thanks to consistent trr and low Cd. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N4148W,115 | trr = 4 ns (same), but VF = 1.25 V @ 100 mA (higher); Cd = 4 pF (double) | Less suitable for RF detection above 300 MHz due to higher capacitance and forward drop | Preferred where cost sensitivity outweighs RF performance; same SOD-123 package footprint |
| FDL100,115 | trr = 3.5 ns (slightly faster), VF = 950 mV @ 100 mA, Cd = 1.8 pF; TO-236 (SOT-23) surface-mount | Requires PCB redesign for SMT assembly; better thermal dissipation but lacks hermetic seal | Chosen when automated assembly and board space reduction are priorities over environmental robustness |
Compared with BAW62,133, the 1N4148W,115 offers lower cost but compromises RF bandwidth and forward efficiency, while the FDL100,115 delivers superior speed and packaging density at the expense of hermetic reliability and through-hole compatibility.
Availability
BAW62,133 is available at Aetrix Electronics and suitable for industrial sensor interfaces, RF detector circuits, and logic-level translation systems requiring stable component supply across multi-year production cycles.
Supply support for BAW62,133 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, formed in 2017 from the former NXP Standard Products division.
The BAW62,133 belongs to Nexperia's high-speed switching diode product line, engineered for signal integrity preservation in fast digital, RF, and industrial interface applications.
FAQ
What is the maximum reverse recovery time specified for BAW62,133?
The BAW62,133 has a maximum reverse recovery time (trr) of 4 ns when switched from IF = 10 mA to IR = 10 mA with RL = 100 Ω, measured at IR = 1 mA. This value is guaranteed across the full operating temperature range and is critical for maintaining timing accuracy in high-frequency switching circuits using the BAW62,133.
Does BAW62,133 have a hermetically sealed package?
Yes, the BAW62,133 uses a hermetically sealed leaded glass SOD27 (DO-35) package. This construction prevents moisture penetration and ensures long-term parameter stability in harsh environments, distinguishing it from plastic-packaged alternatives like the 1N4148W,115. The hermetic seal is integral to the BAW62,133's reliability in industrial and automotive under-hood applications.
What is the continuous forward current rating for BAW62,133?
The BAW62,133 has a continuous forward current (IF) rating of 250 mA at Tamb = 25 °C with 10 mm lead length on FR4 PCB. This rating decreases with rising ambient temperature per Fig.2 in the datasheet. The higher 450 mA repetitive peak forward current (IFRM) supports short-duration pulse handling in the BAW62,133's intended switching applications.
Can BAW62,133 be used in RF detector applications?
Yes, the BAW62,133 is suitable for RF detector applications due to its low 2 pF junction capacitance at 1 MHz and 0 V bias, combined with sub-4 ns trr. These characteristics enable efficient envelope detection up to UHF frequencies. Its performance in RF detection is validated in typical application circuits referenced in Nexperia's documentation for the BAW62,133.
What is the junction-to-ambient thermal resistance of BAW62,133?
The BAW62,133 has a junction-to-ambient thermal resistance (Rth j-a) of 500 K/W when mounted on an FR4 PCB with 10 mm lead length. This value assumes no metallization pad and defines the worst-case thermal path for power dissipation up to 350 mW. Designers must apply this Rth j-a value to calculate maximum allowable power under real ambient conditions for the BAW62,133.
BAW62,133 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- DO-204AH, DO-35, Axial
- Packaging:
- Tape & Box (TB)
- Product Status:
- Active
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 75 V
- Current - Average Rectified (Io):
- 250mA
- Voltage - Forward (Vf) (Max) @ If:
- 1 V @ 100 mA
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 4 ns
- Current - Reverse Leakage @ Vr:
- 5 µA @ 75 V
- Capacitance @ Vr, F:
- 2pF @ 0V, 1MHz
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- ALF2
- Operating Temperature - Junction:
- 200°C (Max)
BAW62,133 FAQ
1.How can I place an order for BAW62,133 through Aetrix?
Please submit a Request for Quotation (RFQ) for BAW62,133 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BAW62,133 reliable?
The price and inventory of BAW62,133 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BAW62,133 is usually 5 days.
3.What payment methods are accepted for BAW62,133?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BAW62,133 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BAW62,133?
BAW62,133 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BAW62,133 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BAW62,133?
For technical support, including BAW62,133 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BAW62,133 requirements.
6.How does Aetrix verify that BAW62,133 is sourced from the original manufacturer or authorized distributors?
All BAW62,133 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BAW62,133 meets industry standards.
7.What is the process for return or replacement of BAW62,133?
All BAW62,133 units undergo pre-shipment inspection (PSI). If there is an issue with BAW62,133, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BAW62,133 part is unused and in its original packaging.
Return procedure for BAW62,133:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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