NXP Semiconductors BAW62,143

Overview

BAW62,143 from Nexperia is a high-speed switching diode in a hermetically sealed SOD27 (DO-35) glass package, featuring 4 ns reverse recovery time, 75 V repetitive peak reverse voltage, and 450 mA repetitive peak forward current. It serves as a fast-switching element in logic interface and pulse shaping circuits where low capacitance (2 pF) and minimal forward recovery voltage (2.5 V) are critical.

For engineers reviewing the BAW62,143 datasheet, BAW62,143 pinout, BAW62,143 application, or BAW62,143 equivalent, this page delivers verified electrical parameters, thermal resistance values (R_{th j-a} = 500 K/W), junction temperature limits (200 °C), and real-world use context for high-frequency signal routing and digital timing paths.

Technical Context

The BAW62,143 employs planar silicon technology to achieve rapid carrier recombination, enabling sub-4 ns reverse recovery (trr) under IF = 10 mA → IR = 10 mA switching with RL = 100 Ω load. Its low diode capacitance (2 pF at 1 MHz, VR = 0 V) and controlled forward recovery voltage (≤2.5 V at tr = 20 ns) support clean edge fidelity in >100 MHz digital waveforms.

Thermal performance is defined for FR4 PCB mounting with 10 mm lead length: junction-to-ambient thermal resistance is 500 K/W, and maximum junction temperature is rated at 200 °C. Continuous forward current derates from 250 mA at 25 °C ambient to zero at ~175 °C per Fig.2.

Key Specifications

Pinout & Package

BAW62,143 is housed in a hermetically sealed leaded glass SOD27 (DO-35) package with axial leads. The device has two terminals: anode and cathode, marked by cathode band on the glass body.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed diode applications.

Compared with BAW62,143, BAV99,215 offers dual-diode integration in SMT form but sacrifices axial-lead compatibility, while 1N4148W,115 trades 2 pF capacitance for 100 V rating-making BAW62,143 optimal for legacy through-hole, high-frequency, medium-voltage signal routing.

Availability

BAW62,143 is available at Aetrix Electronics and suitable for high-speed logic interfacing, RF detection circuits, and pulse conditioning applications requiring stable component supply and long-term obsolescence management.

Supply support for BAW62,143 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in discrete, logic, and PowerMOS semiconductors, formed in 2017 from the former NXP Standard Products business.

The BAW62,143 belongs to Nexperia's high-speed switching diode product line, engineered specifically for fast digital signal integrity, logic-level translation, and RF envelope detection in automotive, industrial, and computing systems.

FAQ

What is the maximum reverse recovery time specified for BAW62,143?

The BAW62,143 has a maximum reverse recovery time (trr) of 4 ns when switched from IF = 10 mA to IR = 10 mA with RL = 100 Ω, measured at IR = 1 mA. This value is confirmed in the Electrical Characteristics table of the official Nexperia datasheet and reflects worst-case performance under standardized test conditions. Designers should use this figure for timing budgeting in >100 MHz switching paths. The BAW62,143 consistently meets this spec across its qualified temperature range.

Is BAW62,143 suitable for surface-mount assembly?

No, BAW62,143 is not suitable for surface-mount assembly. It uses a hermetically sealed axial-leaded SOD27 (DO-35) glass package with 25.4 mm minimum lead length, designed exclusively for through-hole mounting. Attempting reflow or hand-soldering to SMT pads will damage the glass-to-metal seal and compromise reliability. For SMT alternatives, consider BAV99,215 or 1N4148W,115 - both explicitly qualified for reflow processes.

What is the forward voltage of BAW62,143 at 100 mA?

The forward voltage (V_F) of BAW62,143 is guaranteed to be no more than 1000 mV at IF = 100 mA and T_j = 25 °C, per the Electrical Characteristics table. At elevated junction temperature (100 °C), V_F drops to ≤930 mV due to semiconductor physics. This low, stable V_F supports precise biasing in current-source loads and low-drop clamp networks. The BAW62,143 maintains this performance across its full operational temperature range.

Does BAW62,143 have a specified storage temperature range?

Yes, the BAW62,143 has a specified storage temperature range of −65 °C to +200 °C, as stated in the Limiting Values table. This wide range supports long-term warehousing in uncontrolled environments and operation in extreme industrial settings. Unlike many plastic-packaged diodes, the hermetic glass construction prevents moisture absorption and parametric shift during prolonged storage. The BAW62,143 retains full specification compliance after exposure across this full T_stg span.

What is the thermal resistance from junction to ambient for BAW62,143?

The thermal resistance from junction to ambient (R_{th j-a}) for BAW62,143 is 500 K/W under standard test conditions: mounted on FR4 PCB with 10 mm lead length. This value assumes no copper pour or heatsinking. Designers must apply this R_th with actual power dissipation (P_tot ≤ 350 mW at 25 °C) to calculate worst-case junction temperature. The BAW62,143's glass package limits heat spreading, so layout-aware thermal modeling is essential for sustained high-current operation.