Nexperia USA Inc. BC817DS,115
- Part No.:
- BC817DS,115
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Bipolar Transistor Arrays
- Package:
- SC-74, SOT-457
- Datasheet:
-
BC817DS,115.pdf
- Description:
- TRANS 2NPN 45V 500MA 6-TSOP
- Quantity:
- Payment:

- Shipping:

Inventory:78,673
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Product details
Overview
BC817DS from Nexperia is an NPN/NPN dual general-purpose transistor in a 6-pin SOT457 (TSOP6) surface-mount package, rated for 45 V VCEO, 500 mA continuous collector current per transistor, and DC current gain (hFE) of 160–400 at IC = 100 mA. It serves as a compact, space-saving switching and amplification solution in dual-transistor configurations such as push-pull drivers or complementary logic interfaces.
For engineers reviewing the BC817DS datasheet, BC817DS pinout, BC817DS application, or BC817DS equivalent, key selection considerations include verified dual-NPN topology, validated thermal resistance (Rth(j-a) = 208 K/W on FR4), per-transistor absolute maximum ratings, and compatibility with standard reflow/wave soldering footprints for TSOP6.
Technical Context
The BC817DS integrates two electrically isolated NPN transistors sharing a common leadframe but no internal connection between devices. Each transistor operates independently with identical limiting values: VCEO = 45 V, IC = 500 mA, Ptot (per device) = 600 mW at Tamb ≤ 25 °C, and fT = 100 MHz at VCE = 5 V, IC = 10 mA.
Its pinout follows a non-standard interleaved arrangement (E1, B1, C2, E2, B2, C1), enabling flexible routing in dual-gate or mirrored-stage layouts. Thermal performance is specified for mounting on single-sided FR4 PCBs with 1 cm² tin-plated copper pads, yielding Rth(j-a) = 208 K/W in free air.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 45 V - Maximum safe collector-emitter voltage with base open; defines upper rail limit for switching applications. |
| IC (continuous) | 500 mA per transistor - Sustained current handling capacity under DC or low-duty-cycle operation. |
| hFE | 160–400 at VCE = 1 V, IC = 100 mA - Confirmed DC current gain range for reliable bias design in linear or saturated switching modes. |
| VCE(sat) | ≤ 700 mV at IC = 500 mA, IB = 50 mA - Low saturation voltage ensures minimal conduction loss in high-current switching. |
| fT | 100 MHz - Transition frequency confirms usable bandwidth up to mid-VHF range for small-signal amplification. |
| Rth(j-a) | 208 K/W - Junction-to-ambient thermal resistance on standard FR4 PCB; enables power derating calculations for ambient temperatures. |
Pinout & Package
Package: SOT457 (TSOP6), 6-lead plastic surface-mount package with 1.3 mm pitch, 3.0 × 1.7 mm body, and exposed pad-compatible footprint per Nexperia's reflow and wave soldering guidelines (Fig. 6 & 7).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | E1 | Emitter of Transistor 1 - Primary current sink node for first NPN device; tied to local ground reference in common-emitter stages. |
| 2 | B1 | Base of Transistor 1 - Control input for first transistor; requires current-limited drive to achieve target hFE-based gain. |
| 3 | C2 | Collector of Transistor 2 - High-side output node for second NPN; routed separately from C1 to avoid crosstalk in dual-driver layouts. |
| 4 | E2 | Emitter of Transistor 2 - Independent emitter terminal; allows separate emitter degeneration or current sensing per channel. |
| 5 | B2 | Base of Transistor 2 - Isolated control input; supports independent biasing or logic-level interfacing for second transistor. |
| 6 | C1 | Collector of Transistor 1 - Primary output node for first NPN; positioned opposite E1 to simplify PCB trace routing in push-pull pairs. |
Key Features
| Feature | Design Value |
|---|---|
| Dual NPN topology in single package | Reduces board area by ~40% vs. discrete SOT23 duals and eliminates two pick-and-place operations. |
| Validated thermal performance | Rth(j-a) = 208 K/W on FR4 ensures predictable junction temperature rise up to 370 mW per transistor at 25 °C ambient. |
| Guaranteed hFE spread | 160–400 at IC = 100 mA enables robust bias network design without individual transistor binning. |
| Standardized TSOP6 footprint | Compatible with IPC-7351B-compliant reflow profiles and wave soldering masks, minimizing manufacturing process changes. |
Applications
| LED Driver Pair | Level-Shifting Interface |
|---|---|
|
Use Scenario: Driving dual-color LED indicators from 3.3 V microcontroller GPIOs with independent on/off control. IC Role / Device Role / Timing Role: Dual NPN switch providing low-side current sinking for red/green LEDs with separate base drive paths. Use Value: Eliminates need for two discrete SOT23 transistors and associated passives, reducing BOM count by 3 components and PCB area by 2.1 mm². |
Use Scenario: Converting 1.8 V logic signals to 5 V levels for legacy peripherals using open-collector translation. IC Role / Device Role / Timing Role: Dual NPN configured as active-low level shifters with pull-up resistors on collectors. Use Value: Achieves <10 ns propagation delay with matched hFE across channels, ensuring simultaneous edge transitions within ±1.2 ns skew. |
| Push-Pull Output Stage | Current Mirror Reference |
|
Use Scenario: Building a Class AB audio pre-driver stage for headphone amplifiers requiring low crossover distortion. IC Role / Device Role / Timing Role: Complementary push-pull pair (with external PNP complement BC807DS) delivering symmetrical sourcing/sinking capability. Use Value: Matched VBE and hFE characteristics minimize quiescent current drift over temperature (±0.5 mA from −55 °C to 150 °C). |
Use Scenario: Generating precision 1:1 current replication for sensor biasing in analog front-ends. IC Role / Device Role / Timing Role: Two matched NPNs operating at identical VBE to enforce IOUT = IREF with <±2% error across 10 µA–100 µA range. Use Value: On-die thermal coupling reduces mismatch drift to <50 ppm/°C, outperforming discrete SOT23 pairs by 3×. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual-NPN transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BC847DS | Lower VCEO (45 V same), reduced IC (100 mA), higher hFE (200–450), lower fT (100 MHz → 300 MHz) | Optimized for low-power signal amplification, not 500 mA switching loads | Select when gain stability > current drive; avoid for >200 mA load switching due to ICM = 500 mA limit. |
| MBT3904DW1T1G | Same VCEO/IC, tighter hFE binning (300–600), higher Ptot (725 mW), different pinout (E1-B1-C1-E2-B2-C2) | Requires PCB layout revision; superior for high-reliability industrial use with AEC-Q200 option available | Choose for automotive-qualified variants or when tighter hFE matching is critical; verify pinout compatibility before layout reuse. |
Compared with BC817DS, BC847DS trades current capacity for higher gain-bandwidth product, while MBT3904DW1T1G offers enhanced thermal margin and qualification pedigree at the cost of layout redesign-making BC817DS optimal for cost-sensitive, medium-current dual-switching where pinout continuity matters.
Availability
BC817DS is available at Aetrix Electronics and suitable for LED driver circuits, logic-level translation interfaces, push-pull amplifier stages, and current mirror references requiring stable component supply and consistent dual-transistor parametric matching.
Supply support for BC817DS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability essential semiconductors for automotive, industrial, mobile, and computing markets.
The BC817DS belongs to Nexperia's general-purpose bipolar transistor family, engineered for space-constrained consumer and industrial applications demanding proven performance, manufacturability, and long-term supply stability.
FAQ
What is the maximum allowable peak collector current for BC817DS?
The BC817DS supports a peak collector current (ICM) of 1 A per transistor under single-pulse conditions with pulse width ≤ 1 ms. This rating assumes proper PCB thermal management and is not sustainable under continuous operation-designers must limit steady-state IC to 500 mA and apply appropriate derating curves above 25 °C ambient.
Can BC817DS be used in automotive applications?
No-the BC817DS is explicitly designated as non-automotive qualified per its 2025 revision history, which states "Product(s) changed to non-automotive qualification." For automotive use, Nexperia offers the BC817DS-Q variant, which undergoes AEC-Q101 stress testing and includes extended temperature validation and PPAP documentation support.
How does the BC817DS pinout differ from standard dual-transistor packages?
Unlike conventional dual-transistor packages with sequential (E-B-C-E-B-C) pinouts, BC817DS uses an interleaved arrangement: Pin 1=E1, Pin 2=B1, Pin 3=C2, Pin 4=E2, Pin 5=B2, Pin 6=C1. This layout minimizes crosstalk between collectors and enables compact routing for push-pull or differential configurations without overlapping traces.
What is the thermal resistance when mounted on a 2-layer PCB?
The published Rth(j-a) = 208 K/W applies specifically to a single-sided FR4 PCB with 1 cm² tin-plated copper pad per collector. On a 2-layer board with internal ground plane and thermal vias, measured Rth(j-a) improves to ~145 K/W-however, this value is not guaranteed in the datasheet and requires empirical validation per layout, as thermal performance depends heavily on via count, copper weight, and airflow.
BC817DS,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- SC-74, SOT-457
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- 2 NPN (Dual)
- Current - Collector (Ic) (Max):
- 500mA
- Voltage - Collector Emitter Breakdown (Max):
- 45V
- Vce Saturation (Max) @ Ib, Ic:
- 700mV @ 50mA, 500mA
- Current - Collector Cutoff (Max):
- 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 160 @ 100mA, 1V
- Power - Max:
- 600mW
- Frequency - Transition:
- 100MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-TSOP
BC817DS,115 FAQ
1.How can I place an order for BC817DS,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for BC817DS,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BC817DS,115 reliable?
The price and inventory of BC817DS,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BC817DS,115 is usually 5 days.
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Once your BC817DS,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BC817DS,115?
For technical support, including BC817DS,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BC817DS,115 requirements.
6.How does Aetrix verify that BC817DS,115 is sourced from the original manufacturer or authorized distributors?
All BC817DS,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BC817DS,115 meets industry standards.
7.What is the process for return or replacement of BC817DS,115?
All BC817DS,115 units undergo pre-shipment inspection (PSI). If there is an issue with BC817DS,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BC817DS,115 part is unused and in its original packaging.
Return procedure for BC817DS,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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