Infineon Technologies BC817UE6327HTSA1

Overview

BC817UE6327HTSA1 from Infineon Technologies is a dual NPN silicon small-signal transistor array in SC74 (SOT-363) package, rated for 45 V V_CEO, 500 mA I_C, and 330 mW P_tot, with h_FE = 160–400 at I_C = 100 mA, used in audio-frequency amplification and driver stages for discrete logic interface and relay control.

For engineers reviewing the BC817UE6327HTSA1 datasheet, BC817UE6327HTSA1 pinout, BC817UE6327HTSA1 application, or BC817UE6327HTSA1 equivalent, key selection criteria include dual-transistor matching, low V_CE(sat) ≤ 0.7 V at 500 mA/50 mA, AEC-Q101 qualification, RoHS-compliant packaging, and thermal resistance R_thJS ≤ 105 K/W.

Technical Context

This device integrates two galvanically isolated NPN transistors on a single die with tightly matched h_FE and V_BE(sat) characteristics, enabling balanced push-pull or differential pair operation. It supports DC-coupled AF amplification and digital switching up to f_T = 170 MHz at I_C = 50 mA and V_CE = 5 V.

Thermal design relies on junction-to-soldering-point resistance ≤105 K/W, with derated power dissipation above T_S = 115 °C. Electrical isolation between TR1 and TR2 ensures independent biasing without crosstalk in multi-channel signal conditioning.

Key Specifications

Pinout & Package

SC74 (SOT-363) 6-pin surface-mount package with gull-wing leads, 1.9 mm × 2.9 mm footprint, and 1.1 mm max height. Pin 1 marked with dot or bevel.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual NPN transistor array applications.

Compared with BC817UE6327HTSA1, BC847BPDW1T1G offers tighter h_FE but lacks automotive qualification, while MMDT3904-7-F provides identical voltage/current ratings but no transistor-to-transistor parameter matching-making BC817U optimal for AEC-Q101 systems requiring matched gain and saturation behavior.

Availability

BC817UE6327HTSA1 is available at Aetrix Electronics and suitable for automotive body electronics, industrial relay control, audio pre-amplification, and discrete logic interface applications requiring stable component supply and long-term lifecycle support.

Supply support for BC817UE6327HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

The BC817U series belongs to Infineon's automotive-qualified bipolar transistor portfolio, designed specifically for robust, matched dual-transistor operation in engine management, comfort systems, and safety-critical signal conditioning.

FAQ

What is the maximum continuous collector current per transistor in BC817UE6327HTSA1?

The maximum continuous collector current I_C is 500 mA per transistor at T_S ≤ 115 °C. Derating applies above this temperature, with total power dissipation dropping linearly to zero at 150 °C junction temperature. Pulse current up to 1000 mA is allowed for t_p ≤ 10 ms with duty cycle D < 2%.

Is BC817UE6327HTSA1 suitable for high-frequency switching above 10 MHz?

Yes-its transition frequency f_T is 170 MHz at I_C = 50 mA and V_CE = 5 V, supporting reliable switching up to ~10–20 MHz in practical PCB layouts. For >50 MHz operation, parasitic capacitances (C_cb = 6 pF, C_eb = 60 pF) and layout-induced inductance become limiting factors.

How are the two transistors isolated inside the SC74 package?

The transistors are galvanically isolated-no internal electrical connection exists between their collectors, bases, or emitters. This allows independent biasing, separate load connections, and true dual-channel operation without crosstalk, confirmed by zero inter-transistor leakage in datasheet test conditions.

Does BC817UE6327HTSA1 require external base resistors in switching applications?

Yes-base current must be limited to prevent damage. With I_C = 500 mA and h_FE ≥ 160, minimum I_B ≈ 3.1 mA is needed; typical designs use 4.7 kΩ–10 kΩ resistors from 3.3 V or 5 V logic sources. The device has no integrated base resistors.