Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Nexperia USA Inc. BC846BPN/DG/B4X

Part No.:
BC846BPN/DG/B4X
Manufacturer:
Nexperia USA Inc.
Category:
Bipolar Transistor Arrays
Package:
6-TSSOP, SC-88, SOT-363
Datasheet:
AetrixBC846BPN/DG/B4X.pdf
Description:
TRANS NPN/PNP 65V 100MA 6-TSSOP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:7,921

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

BC846BPN from Nexperia is a dual NPN/PNP general-purpose transistor pair in a single SOT363-3 (TSSOP6) package, rated for 65 V VCEO and 100 mA IC per transistor, with matched hFE (200–450), low VCE(sat) (200 mV at IC = 100 mA), and 1.9–2.3 pF collector capacitance - used in compact dual-polarity biasing and complementary switching circuits.

For engineers reviewing the BC846BPN datasheet, BC846BPN pinout, BC846BPN application, or BC846BPN equivalent, this device serves as a space-saving, interference-isolated dual-transistor solution for discrete-level signal inversion, level translation, and push-pull driver stages in portable power management and interface logic.

Technical Context

The BC846BPN integrates two electrically isolated silicon planar transistors - one NPN (TR1) and one PNP (TR2) - sharing no internal connection, enabling independent biasing and eliminating cross-talk. Each transistor supports DC current gain hFE of 200–450 at 2 mA, transition frequency fT ≥ 100 MHz, and operates across −55 °C to +150 °C junction temperature.

Thermal resistance is specified at Rth(j-a) = 416 K/W per device on FR4 PCB, with total power dissipation limited to 300 mW at Tamb ≤ 25 °C. Saturation voltages are tightly controlled: VCE(sat) ≤ 300 mV (NPN) and ≤ −300 mV (PNP) at IC/IB = 20, supporting efficient low-voltage switching.

Key Specifications

Parameter Value and Actual Design Meaning
VCEO 65 V - maximum safe collector-emitter voltage before breakdown; enables use in 24 V and 48 V rail interfaces.
IC 100 mA - continuous collector current per transistor; suitable for driving LEDs, small relays, and logic buffers.
hFE 200–450 - DC current gain range at 2 mA; ensures predictable base drive requirements in linear and saturated operation.
VCE(sat) ≤ 300 mV (NPN), ≤ −300 mV (PNP) - low saturation voltage reduces conduction loss and self-heating in switching applications.
Cc 1.9–2.3 pF - collector capacitance at 10 V; minimizes high-frequency signal loading in RF-coupled and fast-switching nodes.
Ptot 300 mW - maximum device-level power dissipation on standard FR4; defines thermal derating envelope for PCB layout.

Pinout & Package

SOT363-3 (TSSOP6) plastic surface-mount package: 1.35 mm × 2.2 mm footprint, 0.65 mm pitch, 0.95 mm max height, with exposed pad not present; optimized for reflow soldering per IPC-7095 guidelines.

Pin/Terminal Circuit Role Design Meaning
1 Emitter of TR1 (NPN) Low-impedance current sink node for NPN transistor; connects to ground or low-side load return path.
2 Base of TR1 (NPN) Control input for NPN switch/amplifier; requires ~0.7 V forward bias and current-limited drive.
3 Collector of TR2 (PNP) High-side current source node for PNP transistor; connects to positive supply or load high-side terminal.
4 Emitter of TR2 (PNP) Current source output for PNP; ties to VCC or high-voltage rail in complementary configurations.
5 Base of TR2 (PNP) Inverted control input for PNP; driven low to turn on, requiring negative or grounded reference.
6 Collector of TR1 (NPN) Low-side switching output; connects to load between collector and VCC, enabling active-low drive.

Key Features

Feature Design Value
No mutual interference Electrically isolated NPN and PNP die eliminate crosstalk, enabling independent timing and biasing in dual-rail circuits.
Closely matched hFE Both transistors exhibit overlapping hFE ranges (200–450), simplifying symmetric push-pull design without individual trimming.
Low VCE(sat) ≤ 300 mV at IC = 100 mA ensures <10 mW conduction loss per transistor, critical for battery-powered efficiency.
Low collector capacitance 1.9–2.3 pF Cc preserves signal integrity above 100 MHz, supporting audio preamp and low-noise IF amplification.
Space reduction Single SOT363-3 replaces two discrete SOT23 devices, saving >40% board area and reducing assembly cost.

Applications

LED Driver Stage Level Translation Interface

Use Scenario: Driving dual-color (red/green) LED indicators from a 3.3 V microcontroller GPIO with common-anode configuration.

IC Role / Device Role: NPN (TR1) sinks current for green LED; PNP (TR2) sources current for red LED - enabling independent on/off control.

Use Value: Eliminates need for external pull-up resistors and separate transistors, reducing BOM count by 2 components and PCB footprint by 2.5 mm².

Use Scenario: Translating 1.8 V logic outputs to 5 V-tolerant inputs in mixed-voltage MCU peripherals (e.g., UART, SPI).

IC Role / Device Role: NPN acts as low-side level shifter; PNP provides active pull-up to 5 V, achieving bidirectional voltage translation without external bias.

Use Value: Achieves <10 ns propagation delay and rail-to-rail swing with <5 µA quiescent current - outperforming resistor-based solutions in speed and power.

Push-Pull Output Buffer Discrete Op-Amp Input Stage

Use Scenario: Constructing a Class AB output stage for a low-power audio amplifier driving 8 Ω headphones.

IC Role / Device Role: TR1 (NPN) and TR2 (PNP) form complementary emitter-follower pair, delivering ±100 mA peak output current.

Use Value: Delivers THD <0.5% at 1 kHz/10 mW with <100 mV crossover distortion due to matched hFE and low VBE spread.

Use Scenario: Building a discrete instrumentation amplifier front-end requiring ultra-low input bias current and matched gain.

IC Role / Device Role: NPN and PNP configured as differential pair with shared emitter degeneration resistor for common-mode rejection.

Use Value: Enables input offset drift <2 µV/°C and CMRR >85 dB over −40 °C to +85 °C using factory-matched hFE and thermal coupling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual NPN/PNP transistor applications.

Alternative Part Technical Difference Application Difference Selection Advice
BC847BPN VCEO = 45 V (vs. 65 V); hFE min = 200 same, but typ = 250 (lower than BC846BPN's 300–290) Not suitable for 48 V systems; reduced voltage headroom increases risk of avalanche in transient conditions. Select only if operating voltage stays ≤36 V and higher hFE uniformity is not required.
MBT3904/3906 Separate NPN (MBT3904) and PNP (MBT3906) in SOT23; no integrated isolation or footprint consolidation. Requires two footprints and routing; introduces layout asymmetry and potential thermal mismatch between devices. Choose when independent replacement or legacy compatibility with discrete 3904/3906 designs is mandatory.

Compared with BC846BPN, BC847BPN sacrifices 20 V voltage margin and gain consistency for marginal cost reduction, while MBT3904/3906 trades integration benefits for part-level flexibility - making BC846BPN optimal for space-constrained, dual-polarity analog and logic interface designs.

Availability

BC846BPN is available at Aetrix Electronics and suitable for LED driver stages, level translation interfaces, push-pull output buffers, and discrete op-amp input stages requiring stable component supply and consistent parametric matching across production lots.

Supply support for BC846BPN includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified and industrial-grade components.

The BC846BPN belongs to Nexperia's general-purpose bipolar transistor family, engineered for compact, interference-free dual-transistor integration in consumer, industrial, and communication equipment where board space and parametric consistency are critical.

FAQ

What is the maximum allowable junction temperature for BC846BPN?

The absolute maximum junction temperature (Tj) is 150 °C, as defined in Table 5 of the datasheet. Operation beyond this limit risks permanent degradation of hFE, increased leakage, and bond wire failure. Derating begins at Tamb > 25 °C per Fig. 1's 416 K/W curve, requiring thermal-aware PCB layout with adequate copper pour.

Can BC846BPN be used in linear amplification mode?

Yes - both transistors support linear operation with VCE = 5 V, IC = 2 mA, and hFE = 300 (typ). The low noise figure (NF = 2.9–3.1 dB at 1 kHz) and tight hFE matching make it suitable for low-noise preamplifier stages, provided VCE remains within 1–10 V and power dissipation stays below 150 mW per transistor.

Is the BC846BPN pinout compatible with standard TSSOP6 footprints?

Yes - the BC846BPN uses the industry-standard SOT363-3 (TSSOP6) outline per Fig. 19, with 0.65 mm lead pitch, 1.35 mm × 2.2 mm body, and pin 1 index mark. Reflow soldering footprints match Fig. 20 (2.65 mm × 2.35 mm land pattern), and wave soldering aligns with Fig. 21.

How does the "B" suffix in BC846BPN affect its electrical characteristics?

The "B" denotes the hFE grade: 200–450 for both transistors (TR1 NPN and TR2 PNP), as confirmed in Table 1 and Table 7. This distinguishes it from "A" (110–220) and "C" (420–800) grades. No other parameters (VCEO, VCE(sat), fT) vary with the suffix - only DC current gain distribution is binned.

BC846BPN/DG/B4X Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
6-TSSOP, SC-88, SOT-363
Packaging:
Tape & Reel (TR)
Product Status:
Active
Transistor Type:
1 NPN, 1 PNP
Current - Collector (Ic) (Max):
100mA
Voltage - Collector Emitter Breakdown (Max):
65V
Vce Saturation (Max) @ Ib, Ic:
300mV @ 5mA, 100mA
Current - Collector Cutoff (Max):
15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
200 @ 2mA, 5V
Power - Max:
300mW
Frequency - Transition:
100MHz
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
6-TSSOP

BC846BPN/DG/B4X FAQ

1.How can I place an order for BC846BPN/DG/B4X through Aetrix?

Please submit a Request for Quotation (RFQ) for BC846BPN/DG/B4X on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BC846BPN/DG/B4X reliable?

The price and inventory of BC846BPN/DG/B4X are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BC846BPN/DG/B4X is usually 5 days.

3.What payment methods are accepted for BC846BPN/DG/B4X?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BC846BPN/DG/B4X transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BC846BPN/DG/B4X?

BC846BPN/DG/B4X orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BC846BPN/DG/B4X order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BC846BPN/DG/B4X?

For technical support, including BC846BPN/DG/B4X datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BC846BPN/DG/B4X requirements.

6.How does Aetrix verify that BC846BPN/DG/B4X is sourced from the original manufacturer or authorized distributors?

All BC846BPN/DG/B4X products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BC846BPN/DG/B4X meets industry standards.

7.What is the process for return or replacement of BC846BPN/DG/B4X?

All BC846BPN/DG/B4X units undergo pre-shipment inspection (PSI). If there is an issue with BC846BPN/DG/B4X, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BC846BPN/DG/B4X part is unused and in its original packaging.

Return procedure for BC846BPN/DG/B4X:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

BC846BPN/DG/B4X Tags

  • BC846BPN/DG/B4X
  • BC846BPN/DG/B4X PDF
  • BC846BPN/DG/B4X Datasheet
  • BC846BPN/DG/B4X Specifications
  • BC846BPN/DG/B4X Images
  • Nexperia USA Inc.
  • Nexperia USA Inc. BC846BPN/DG/B4X
  • Buy BC846BPN/DG/B4X
  • BC846BPN/DG/B4X Price
  • BC846BPN/DG/B4X Distributor
  • BC846BPN/DG/B4X Supplier
  • BC846BPN/DG/B4X Wholesale
Related Products
MBT3946DW1T1G
MBT3946DW1T1G

onsemi

BC846BPDW1T1G
BC846BPDW1T1G

onsemi

MBT2222ADW1T1G
MBT2222ADW1T1G

onsemi

BC847BDW1T1G
BC847BDW1T1G

onsemi

DMMT5401-7-F
DMMT5401-7-F

Diodes Incorporated

DMMT5551-7-F
DMMT5551-7-F

Diodes Incorporated

DMMT3904W-7-F
DMMT3904W-7-F

Diodes Incorporated

DMMT3906W-7-F
DMMT3906W-7-F

Diodes Incorporated

FMB3904
FMB3904

onsemi

FMB2222A
FMB2222A

onsemi

ULQ2003D1013TR
ULQ2003D1013TR

STMicroelectronics

ZXTD4591E6TA
ZXTD4591E6TA

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER