My Inquiry
My Account
Nexperia USA Inc. BC846BS,115
- Part No.:
- BC846BS,115
- Manufacturer:
- Nexperia USA Inc.
- Category:
- Bipolar Transistor Arrays
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
BC846BS,115.pdf
- Description:
- TRANS 2NPN 65V 100MA 6-TSSOP
- Quantity:
- Payment:
- Shipping:
Inventory:20,871
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
BC846BS,115 from Nexperia is a dual NPN general-purpose transistor pair in SOT363-3 (TSSOP6) package, rated for 65 V VCEO, 100 mA IC, and featuring matched hFE (200–450), low VCE(sat) (200 mV typ. at 100 mA/5 mA), and isolated operation-used in compact signal switching and amplification circuits on space-constrained PCBs.
For engineers reviewing the BC846BS,115 datasheet, BC846BS,115 pinout, BC846BS,115 application, or BC846BS,115 equivalent, this device is selected for dual-transistor functions requiring thermal isolation, low inter-transistor crosstalk, and stable DC gain matching across temperature (−55 °C to 150 °C).
Technical Context
The BC846BS,115 integrates two electrically independent NPN transistors in a single TSSOP6 package with no internal connection between devices-enabling simultaneous but uncoupled switching or amplification paths. Its design supports bias-stable operation with hFE tightly distributed (200–450 at VCE = 5 V, IC = 2 mA) and low Cc (1.9 pF) for high-frequency linearity.
Thermal performance is defined per device (Rth(j-a) = 416 K/W on FR4) and per transistor (Rth(j-a) = 625 K/W), reflecting its dual-die construction and shared package thermal path. Power dissipation is derated linearly above 25 °C ambient, with 300 mW total device limit and 200 mW per transistor maximum.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 65 V - Maximum safe collector-emitter voltage with base open; defines off-state blocking capability in switching applications. |
| IC | 100 mA - Continuous collector current rating per transistor; sets upper bound for load drive in amplification or digital logic interface. |
| hFE | 200–450 - DC current gain range at VCE = 5 V, IC = 2 mA; enables predictable biasing and gain stability across production lots. |
| VCE(sat) | 200 mV (typ.) at IC = 100 mA, IB = 5 mA - Low saturation voltage minimizes conduction loss and heat generation in saturated-switch mode. |
| Cc | 1.9 pF - Collector-base capacitance at VCB = 10 V; limits high-frequency roll-off and improves bandwidth in RF-adjacent small-signal stages. |
| Ptot (device) | 300 mW - Total package power dissipation limit on FR4 PCB; constrains combined thermal loading of both transistors under continuous operation. |
Pinout & Package
SOT363-3 (TSSOP6) is a 6-pin, surface-mount plastic package with 0.65 mm lead pitch, 2.2 mm × 1.35 mm body size, and exposed pad-compatible footprint for thermal management on standard FR4 boards.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Emitter of TR1 | Low-impedance current sink node for first transistor; connects directly to ground or emitter resistor in common-emitter configuration. |
| 2 | Base of TR1 | Control input for TR1; requires current-limited drive (e.g., via 10 kΩ resistor) to achieve target IC based on hFE. |
| 3 | Collector of TR2 | High-side output node for second transistor; used as active load or switch output in complementary pair implementations. |
| 4 | Emitter of TR2 | Independent emitter reference for TR2; enables separate bias networks and eliminates shared-emitter coupling between transistors. |
| 5 | Base of TR2 | Isolated control input for TR2; allows asynchronous or differential drive without interference from TR1's base current. |
| 6 | Collector of TR1 | Primary output node for TR1; routed to load or next stage with minimal parasitic inductance due to short internal bond wire path. |
Key Features
| Feature | Design Value |
|---|---|
| No mutual interference | Electrically isolated die structure ensures TR1 and TR2 operate independently-critical for noise-sensitive analog front-ends and dual-channel logic buffers. |
| Closely matched hFE | Gain tracking within ±25% across both transistors at nominal bias enables balanced differential pair operation without external trimming. |
| Low VCE(sat) | 200 mV typical saturation voltage reduces power loss by >30% vs. legacy general-purpose transistors at 100 mA, improving efficiency in battery-powered switches. |
| Reduced board space | Dual-transistor integration cuts component count by one device and saves ~3.5 mm² PCB area versus discrete SOT23 solutions. |
Applications
| LED Driver Circuit | Level-Shifting Interface |
|---|---|
|
Use Scenario: Driving dual-color LED indicators from 3.3 V microcontroller GPIOs with current limiting and polarity inversion. IC Role / Device Role / Timing Role: Each transistor acts as a saturated switch controlling cathode (TR1) and anode (TR2) paths independently. Use Value: Matched hFE ensures consistent LED brightness; low VCE(sat) preserves >95% of supply voltage across LEDs at 20 mA. |
Use Scenario: Translating 1.8 V logic signals to 5 V TTL levels in mixed-voltage sensor subsystems. IC Role / Device Role / Timing Role: TR1 configured as common-emitter inverter; TR2 provides pull-up to 5 V rail with fast edge response. Use Value: 100 MHz fT supports clean 10 MHz signal edges; low Cc minimizes propagation delay skew between channels. |
| Current Mirror Reference | Audio Preamp Stage |
|
Use Scenario: Generating matched bias currents for op-amp input stages or ADC reference buffers in portable instrumentation. IC Role / Device Role / Timing Role: Dual transistors wired in diode-connected + common-base configuration to replicate IC with <1% mismatch. Use Value: Tight hFE distribution and thermal coupling in shared package reduce current error drift over temperature (±50 ppm/°C typical). |
Use Scenario: Low-noise preamplification of electret microphone outputs before ADC sampling in voice-enabled IoT nodes. IC Role / Device Role / Timing Role: TR1 configured as common-emitter amplifier with emitter degeneration; TR2 provides active load for gain stability. Use Value: 3.1 dB NF at 1 kHz and 0.2 mA IC enables SNR >65 dB; low Ce (11 pF) maintains flat frequency response to 20 kHz. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual NPN transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BC847BS,115 | Higher hFE range (300–630); identical VCEO, IC, and package. | Better suited for low-drive applications where base current must be minimized (e.g., high-impedance sensor interfaces). | Select when gain headroom >450 is required without changing layout or thermal design. |
| MMDT3904-7-F | Same dual NPN topology but in SOT-363; VCEO = 40 V, hFE = 100–300, higher VCE(sat) (300 mV min). | Limited to ≤40 V systems; less suitable for industrial 24 V control logic due to lower breakdown margin. | Choose only if cost sensitivity outweighs voltage margin and gain consistency requirements. |
Compared with BC846BS,115, BC847BS,115 offers higher gain for reduced base drive, while MMDT3904-7-F trades voltage rating and saturation performance for broader distributor availability-making BC846BS,115 optimal for 65 V–capable, gain-matched dual-switch designs.
Availability
BC846BS,115 is available at Aetrix Electronics and suitable for LED driver circuits, level-shifting interfaces, current mirror references, and audio preamp stages requiring stable component supply and tight parametric matching.
Supply support for BC846BS,115 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability essential semiconductors-including logic, discretes, MOSFETs, and ESD protection devices.
The BC846BS,115 belongs to Nexperia's general-purpose bipolar transistor family, engineered for space-constrained consumer, computing, and industrial applications demanding dual-device integration without performance compromise.
FAQ
What is the maximum operating junction temperature for BC846BS,115?
The absolute maximum junction temperature (Tj) is 150 °C, as specified in the Limiting Values table. Operation beyond this threshold risks permanent degradation of hFE and increased leakage currents. Derating begins at 25 °C ambient, with total device power limited to 300 mW on standard FR4 PCBs.
Can BC846BS,115 be used in linear amplification mode?
Yes-its fT of 100 MHz and low noise figure (3.1 dB at 1 kHz) support small-signal linear amplification up to ~10 MHz. Stable operation requires proper emitter degeneration and thermal management, as VCE must remain ≥1 V to avoid saturation distortion in active-region biasing.
Is there electrical isolation between the two transistors in BC846BS,115?
Yes-the datasheet explicitly states "no mutual interference between the transistors," confirmed by independent pinning (separate bases, emitters, collectors) and absence of internal connections. This allows fully independent biasing, switching, or amplification without crosstalk or shared thermal feedback paths.
What does the marking code %E5 indicate on BC846BS,115 devices?
The marking "%E5" consists of a placeholder (%) for the manufacturing site code and "E5" as the device-specific identifier per Nexperia's marking convention. It is not a date code or lot identifier-full traceability requires scanning the full top-mark or consulting the reel label's 12-digit Nexperia part number and batch ID.
BC846BS,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- 2 NPN (Dual)
- Current - Collector (Ic) (Max):
- 100mA
- Voltage - Collector Emitter Breakdown (Max):
- 65V
- Vce Saturation (Max) @ Ib, Ic:
- 300mV @ 5mA, 100mA
- Current - Collector Cutoff (Max):
- 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 200 @ 2mA, 5V
- Power - Max:
- 300mW
- Frequency - Transition:
- 100MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-TSSOP
BC846BS,115 FAQ
1.How can I place an order for BC846BS,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for BC846BS,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BC846BS,115 reliable?
The price and inventory of BC846BS,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BC846BS,115 is usually 5 days.
3.What payment methods are accepted for BC846BS,115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BC846BS,115 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BC846BS,115?
BC846BS,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BC846BS,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BC846BS,115?
For technical support, including BC846BS,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BC846BS,115 requirements.
6.How does Aetrix verify that BC846BS,115 is sourced from the original manufacturer or authorized distributors?
All BC846BS,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BC846BS,115 meets industry standards.
7.What is the process for return or replacement of BC846BS,115?
All BC846BS,115 units undergo pre-shipment inspection (PSI). If there is an issue with BC846BS,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BC846BS,115 part is unused and in its original packaging.
Return procedure for BC846BS,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
BC846BS,115 Tags
-
MBT3946DW1T1G
onsemi
-
BC846BPDW1T1G
onsemi
-
MBT2222ADW1T1G
onsemi
-
BC847BDW1T1G
onsemi
-
DMMT5401-7-F
Diodes Incorporated
-
DMMT5551-7-F
Diodes Incorporated
-
DMMT3904W-7-F
Diodes Incorporated
-
DMMT3906W-7-F
Diodes Incorporated
-
FMB3904
onsemi
-
FMB2222A
onsemi
-
ULQ2003D1013TR
STMicroelectronics
-
ZXTD4591E6TA
Diodes Incorporated
Tech Hub
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
