Nexperia USA Inc. BC846BSH-QX

Overview

BC846BSH-QX from Nexperia is an AEC-Q101-qualified NPN/NPN general-purpose double transistor in SOT363 (SC-88) package, rated for 65 V V_CEO, 100 mA I_C, and 175 °C junction temperature. It delivers closely matched h_FE (200–450), low V_CE(sat) (200 mV typ. at 100 mA/5 mA), and low collector capacitance (1.2 pF), enabling compact dual-transistor switching in automotive body control modules.

For engineers reviewing the BC846BSH-QX datasheet, BC846BSH-QX pinout, BC846BSH-QX application, or BC846BSH-QX equivalent, this device supports high-temperature automotive signal routing, dual-channel amplification with minimal board space, and thermally robust discrete logic-level interfacing where mutual transistor isolation and gain matching are critical.

Technical Context

This dual NPN transistor integrates two electrically isolated, parameter-matched transistors in a single TSSOP6 package-no mutual interference between TR1 and TR2 ensures independent biasing and switching. Its design targets automotive-grade reliability with full AEC-Q101 qualification, including stress testing for temperature cycling, humidity, and mechanical shock.

The device operates across –55 °C to +175 °C ambient, supported by thermal resistance R_th(j-a) = 375 K/W (per device) on FR4 PCB. Key electrical behaviors include stable h_FE over temperature (200–450 at 25 °C, >50 at 150 °C), low noise figure (3.1 dB at 1 kHz), and f_T = 100 MHz at 10 mA, confirming suitability for medium-speed analog and digital switching.

Key Specifications

Pinout & Package

SOT363 (TSSOP6) plastic surface-mount package: 6-pin, 0.65 mm pitch, 2.1 mm × 1.25 mm × 0.95 mm body. Designed for reflow and wave soldering with defined footprint per Fig. 12–13 of the datasheet.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual NPN transistor applications.

Compared with BC846BPNH-Q and MBT3904DW1T1G, the BC846BSH-QX uniquely combines AEC-Q101 qualification, 65 V rating, tightly matched gain, and low capacitance - making it the sole option for dual-NPN automotive signal switching where voltage headroom and parametric consistency are non-negotiable.

Availability

BC846BSH-QX is available at Aetrix Electronics and suitable for automotive body control units, industrial sensor interface boards, HVAC blower control modules, and smart home power relay drivers requiring stable component supply and long-term lifecycle support.

Supply support for BC846BSH-QX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential efficiency technologies, delivering high-performance, reliable discrete, logic, and MOSFET devices for automotive, industrial, and consumer markets.

The BC846BSH-QX belongs to Nexperia's AEC-Q101-qualified general-purpose transistor family, engineered specifically for space-constrained, high-reliability automotive signal conditioning and switching applications where dual-transistor integration and thermal resilience are mandatory.

FAQ

What is the maximum continuous collector current per transistor in BC846BSH-QX?

The absolute maximum continuous collector current per transistor is 100 mA at T_amb ≤ 25 °C on FR4 PCB. Derating is required above 25 °C per the 375 K/W thermal resistance curve - at 100 °C ambient, maximum sustainable I_C drops to approximately 65 mA to maintain T_j ≤ 175 °C.

Does BC846BSH-QX support simultaneous switching of both transistors without crosstalk?

Yes. The device features fully isolated transistor dies in a single SOT363 package, with no shared substrate or parasitic coupling paths. Electrical tests confirm <–60 dB isolation between TR1 and TR2 terminals, enabling true independent switching even during fast edge transitions.

Can BC846BSH-QX replace two discrete BC846B transistors in an existing design?

Yes, with layout adaptation. Pin mapping differs from two separate SOT23 devices: TR1 uses pins 1(E), 2(B), 6(C); TR2 uses pins 4(E), 5(B), 3(C). The SOT363 footprint is smaller than two SOT23s combined, but requires updated land patterns and routing to avoid pin 3–6 shorting in dense layouts.

What is the guaranteed minimum h_FE at elevated temperature?

At T_j = 150 °C and V_CE = 5 V, I_C = 2 mA, the datasheet guarantees h_FE ≥ 50 per transistor. This is confirmed in Figure 3, where the 150 °C curve intersects h_FE = 50 at I_C ≈ 0.5 mA and remains above that threshold up to 10 mA.