Nexperia USA Inc. BC846BSHX

Overview

BC846BSHX from Nexperia is a dual NPN general-purpose transistor in SOT363 (TSSOP6) package, rated for 65 V V_CEO, 100 mA I_C, and 175 °C junction temperature. It integrates two matched transistors with low C_c (1.2 pF), low V_CEsat (200 mV at 100 mA), and h_FE range 200–450 - used in compact signal switching and amplification stages of industrial sensor interfaces and power management supervisors.

For engineers reviewing the BC846BSHX datasheet, BC846BSHX pinout, BC846BSHX application, or BC846BSHX equivalent, this page delivers verified pin functions, thermal derating behavior, matched gain tracking across temperature, and validated alternatives for space-constrained dual-transistor designs.

Technical Context

This device implements two electrically isolated NPN transistors in a single ultra-small SOT363 package, eliminating mutual interference while maintaining tight h_FE matching (200–450 typ. at 2 mA). Its 175 °C T_j rating and 375 K/W per-device R_th(j-a) support operation in high-temperature industrial enclosures without forced cooling.

Each transistor features low collector capacitance (1.2 pF) and low saturation voltage (200 mV @ I_C/I_B = 20), enabling fast switching in 100 kHz–1 MHz control loops and low-loss biasing in analog front-ends. The 0.65 mm pitch and 2.1 × 1.25 mm footprint reduce PCB area by >40% versus discrete SOT23 pairs.

Key Specifications

Pinout & Package

SOT363 (TSSOP6) plastic surface-mount package: 6-pin, 0.65 mm pitch, 2.1 mm × 1.25 mm × 0.95 mm body height. Designed for reflow soldering with standard footprint per Figure 12 (sot363_fr).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual NPN transistor applications.

Compared with BC846BSHX, BC847BSH trades tighter h_FE matching for higher gain, while MBT3904DW1T1G sacrifices voltage rating and capacitance performance for cost - making BC846BSHX optimal for industrial 48 V signal conditioning where gain consistency and thermal robustness are critical.

Availability

BC846BSHX is available at Aetrix Electronics and suitable for industrial sensor interfaces, LED driver circuits, power supply sequencing networks, and low-voltage logic translation requiring stable component supply across extended temperature ranges.

Supply support for BC846BSHX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability essential semiconductors for automotive, industrial, and computing markets.

BC846BSHX belongs to Nexperia's general-purpose bipolar transistor portfolio, engineered for space-constrained, thermally demanding applications where dual-transistor integration improves system-level reliability and reduces bill-of-materials count.

FAQ

What is the maximum continuous collector current per transistor in BC846BSHX?

The absolute maximum continuous collector current per transistor is 100 mA, as defined in Table 5 (Limiting values). This rating applies at T_amb ≤ 25 °C on a standard FR4 PCB; derating is required above 25 °C per Figure 1, where power dissipation drops linearly to zero at 175 °C ambient.

Does BC846BSHX support operation at 150 °C junction temperature?

Yes - BC846BSHX is fully characterized and guaranteed up to 175 °C junction temperature. Electrical parameters including h_FE, V_CEsat, and leakage currents remain within specification limits at 150 °C, as confirmed in Figures 3–6 of the datasheet showing performance curves across –40 °C to +175 °C.

Can the two transistors share a common emitter connection?

No - Pin 1 (E1) and Pin 4 (E2) are physically and electrically isolated terminals. The device uses separate emitter leads to eliminate current coupling and ensure true independence; connecting E1 and E2 externally violates the isolation architecture and may cause unpredictable gain interaction or thermal runaway.

What is the typical transition frequency (f_T) of BC846BSHX?

The typical transition frequency is 100 MHz at V_CE = 5 V, I_C = 10 mA, and f = 100 MHz (Table 7). This value is measured per transistor and remains stable across the full operating temperature range, supporting RF preamplifier and oscillator applications up to 30 MHz fundamental frequency.